Tsang; Paul J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsang; Paul J..The latest application filed is for "structure and fabrication of sicr microfuses".

Company Profile

0.15.0

Tsang; Paul J. - Poughkeepsie NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Structure and fabrication of SiCr microfuses Grant 5,340,775 - Carruthers , et al. August 23, 1	1994-08-23
Inverse T-gate FET transistor with lightly doped source and drain region Grant 5,241,203 - Hsu , et al. August 31, 1	1993-08-31
Method of forming an inverse T-gate FET transistor Grant 5,120,668 - Hsu , et al. June 9, 1	1992-06-09
Process of making BiCMOS devices having closely spaced device regions Grant 5,015,594 - Chu , et al. May 14, 1	1991-05-14
Selective epitaxial growth structure and isolation Grant 4,908,691 - Silvestri , et al. March 13, 1	1990-03-13
Fabrication methods for high performance lateral bipolar transistors Grant 4,583,106 - Anantha , et al. April 15, 1	1986-04-15
Fabrication methods for high performance lateral bipolar transistors Grant 4,546,536 - Anantha , et al. October 15, 1	1985-10-15
Method of fabricating a lateral PNP transistor Grant 4,510,676 - Anantha , et al. April 16, 1	1985-04-16
Fabrication process of sub-micrometer channel length MOSFETs Grant 4,419,809 - Riseman , et al. December 13, 1	1983-12-13
Formation of bit lines for ram device Grant 4,403,394 - Shepard , et al. September 13, 1	1983-09-13
Bipolar transistor Grant 4,392,149 - Horng , et al. July 5, 1	1983-07-05
Method of fabricating an MOS dynamic RAM with lightly doped drain Grant 4,366,613 - Ogura , et al. January 4, 1	1983-01-04
Process for fabricating improved bipolar transistor utilizing selective etching Grant 4,309,812 - Horng , et al. January 12, 1	1982-01-12
Process for forming monocrystalline silicon carbide on silicon substrates Grant 4,028,149 - Deines , et al. June 7, 1	1977-06-07
Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching Grant 3,998,674 - Cameron , et al. December 21, 1	1976-12-21

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