Tsai; Willman

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsai; Willman.The latest application filed is for "quantum well mosfet channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains".

Company Profile

0.8.7

Tsai; Willman - Saratoga CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains Grant 10,084,058 - Majhi , et al. September 25, 2	2018-09-25
Quantum Well Mosfet Channels Having Lattice Mismatch With Metal Source/drains, And Conformal Regrowth Source/drains App 20160372574 - Majhi; Prashant ; et al.	2016-12-22
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains Grant 9,443,936 - Majhi , et al. September 13, 2	2016-09-13
Quantum Well Mosfet Channels Having Lattice Mismatch With Metal Source/drains, And Conformal Regrowth Source/drains App 20130234113 - Majhi; Prashant ; et al.	2013-09-12
Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains Grant 8,501,508 - Majhi , et al. August 6, 2	2013-08-06
Quantum Well Mosfet Channels Having Uni-axial Strain Caused By Metal Source/drains, And Conformal Regrowth Source/drains App 20120231596 - Majhi; Prashant ; et al.	2012-09-13
Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Grant 8,258,498 - Majhi , et al. September 4, 2	2012-09-04
Quantum Well Mosfet Channels Having Uni-axial Strain Caused By Metal Source/drains, And Conformal Regrowth Source/drains App 20110121266 - Majhi; Prashant ; et al.	2011-05-26
Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Grant 7,947,971 - Majhi , et al. May 24, 2	2011-05-24
Quantum Well Mosfet Channels Having Uni-axial Strain Caused By Metal Source/drains, And Conformal Regrowth Source/drains App 20100193771 - Majhi; Prashant ; et al.	2010-08-05
Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Grant 7,759,142 - Majhi , et al. July 20, 2	2010-07-20
Quantum Well Mosfet Channels Having Uni-axial Strain Caused By Metal Source/drains, And Conformal Regrowth Source/drains App 20100163847 - Majhi; Prashant ; et al.	2010-07-01

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