Tsai; Jun-Lin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsai; Jun-Lin.The latest application filed is for "method of forming a shallow trench-deep trench isolation region for a bicmos/cmos technology".

Company Profile

0.9.6

Tsai; Jun-Lin - Hsin-Chu TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology Grant 7,372,102 - Chang , et al. May 13, 2	2008-05-13
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology Grant 7,250,344 - Chang , et al. July 31, 2	2007-07-31
Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology App 20060063389 - Chang; Kuan-Lun ; et al.	2006-03-23
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology App 20060063349 - Chang; Kuan-Lun ; et al.	2006-03-23
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology Grant 7,015,086 - Chang , et al. March 21, 2	2006-03-21
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology App 20050176214 - Chang, Kuan-Lun ; et al.	2005-08-11
Twin current bipolar device with hi-lo base profile Grant 6,747,336 - Tsai , et al. June 8, 2	2004-06-08
High voltage transistor using P+ buried layer App 20020105054 - Tsai, Jun-Lin ; et al.	2002-08-08
High voltage transistor using P+ buried layer Grant 6,423,590 - Tsai , et al. July 23, 2	2002-07-23
High voltage transistor using P+ buried layer App 20010017379 - Tsai, Jun-Lin ; et al.	2001-08-30
Twin current bipolar device with hi-lo base profile App 20010010963 - Tsai, Jun-Lin ; et al.	2001-08-02
Twin current bipolar device with hi-lo base profile Grant 6,211,028 - Tsai , et al. April 3, 2	2001-04-03
Integrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusion Grant 6,165,861 - Liu , et al. December 26, 2	2000-12-26
Field ring to improve the breakdown voltage for a high voltage bipolar device Grant 6,162,695 - Hwang , et al. December 19, 2	2000-12-19
Uniform sidewall profile etch method for forming low contact leakage schottky diode contact Grant 6,096,629 - Tsai , et al. August 1, 2	2000-08-01

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