TSAI; Han-Min

Patent Applications and Registrations

Patent applications and USPTO patent grants for TSAI; Han-Min.The latest application filed is for "buried channel semiconductor device and method for manufacturing the same".

Company Profile

7.10.12

TSAI; Han-Min - Hsinchu City TW
Tsai; Han-Min - Hsin-Chu TW
Tsai; Han-Min - Hsinchu TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Buried Channel Semiconductor Device And Method For Manufacturing The Same App 20210375862 - CHEN; Chia-Chung ; et al.	2021-12-02
Display device comprising a dichroic reflection layer having a plurality of recessed portions disposed with a corresponding plurality of quantum dot blocks Grant 11,181,778 - Kuo , et al. November 23, 2	2021-11-23
High-implant Channel Semiconductor Device And Method For Manufacturing The Same App 20210344303 - CHEN; Chia-Chung ; et al.	2021-11-04
Buried channel semiconductor device and method for manufacturing the same Grant 11,094,694 - Chen , et al. August 17, 2	2021-08-17
FinFET Varactor with Low Threshold Voltage and Method of Making the Same App 20210242197 - Tsai; Fu-Huan ; et al.	2021-08-05
High-implant channel semiconductor device and method for manufacturing the same Grant 11,063,559 - Chen , et al. July 13, 2	2021-07-13
FinFET varactor with low threshold voltage and method of making the same Grant 10,991,687 - Tsai , et al. April 27, 2	2021-04-27
Buried Channel Semiconductor Device And Method For Manufacturing The Same App 20200135730 - CHEN; Chia-Chung ; et al.	2020-04-30
FinFET Varactor with Low Threshold Voltage and Method of Making the Same App 20200126975 - Tsai; Fu-Huan ; et al.	2020-04-23
Buried channel semiconductor device and method for manufacturing the same Grant 10,529,711 - Chen , et al. J	2020-01-07
FinFET varactor with low threshold voltage and method of making the same Grant 10,522,535 - Tsai , et al. Dec	2019-12-31
FinFET varactor with low threshold voltage and method of making the same Grant 10,522,534 - Tsai , et al. Dec	2019-12-31
Display Device Having Dichroic Reflection Layer App 20190250464 - Kuo; Ting-Yi ; et al.	2019-08-15
FinFET Varactor with Low Threshold Voltage and Method of Making the Same App 20180337173 - Tsai; Fu-Huan ; et al.	2018-11-22
Buried Channel Semiconductor Device And Method For Manufacturing The Same App 20170352660 - Chen; Chia-Chung ; et al.	2017-12-07
FinFET Varactor with Low Threshold Voltage and Method of Making the Same App 20170317073 - Tsai; Fu-Huan ; et al.	2017-11-02
Bipolar junction transistor layout Grant 9,780,089 - Tsai , et al. October 3, 2	2017-10-03
Buried channel semiconductor device and method for manufacturing the same Grant 9,761,584 - Chen , et al. September 12, 2	2017-09-12
Bipolar Junction Transistor Layout App 20170047323 - TSAI; Han-Min ; et al.	2017-02-16
Buried Channel Semiconductor Device And Method For Manufacturing The Same App 20160358911 - CHEN; Chia-Chung ; et al.	2016-12-08
High-implant Channel Semiconductor Device And Method For Manufacturing The Same App 20160358912 - CHEN; Chia-Chung ; et al.	2016-12-08
Bipolar junction transistor layout Grant 9,484,408 - Tsai , et al. November 1, 2	2016-11-01

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.