Tsai; Feng-Chien

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsai; Feng-Chien.The latest application filed is for "process for preparing ingot having reduced distortion at late body length".

Company Profile

4.2.10

Tsai; Feng-Chien - Taipei TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Process For Preparing Ingot Having Reduced Distortion At Late Body Length App 20220220631 - Jain; Tapas ; et al.	2022-07-14
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Grant 11,111,602 - Lu , et al. September 7, 2	2021-09-07
Process For Preparing Ingot Having Reduced Distortion At Late Body Length App 20210269936 - Jain; Tapas ; et al.	2021-09-02
Nitrogen Doped And Vacancy Dominated Silicon Ingot And Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density And Size App 20210198805 - Lu; Zheng ; et al.	2021-07-01
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Grant 10,988,859 - Lu , et al. April 27, 2	2021-04-27
Process For Preparing Ingot Having Reduced Distortion At Late Body Length App 20200325594 - Jain; Tapas ; et al.	2020-10-15
Monitoring A Moving Average Of The Ingot Neck Pull Rate To Control The Quality Of The Neck For Ingot Growth App 20200002839 - Lu; Zheng ; et al.	2020-01-02
Systems For Producing A Monocrystalline Ingot That Involve Monitoring Neck Growth Moving Average App 20200002840 - Lu; Zheng ; et al.	2020-01-02
Methods For Producing A Silicon Ingot That Involve Monitoring A Moving Average Of The Ingot Neck Pull Rate App 20200002838 - Lu; Zheng ; et al.	2020-01-02
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size App 20180266015 - Lu; Zheng ; et al.	2018-09-20
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size App 20180266016 - Lu; Zheng ; et al.	2018-09-20
Nitrogen Doped And Vacancy Dominated Silicon Ingot And Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density And Size App 20160032491 - Lu; Zheng ; et al.	2016-02-04

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