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Three-dimensional stacking structure Grant 10,777,534 - Huang , et al. Sept | 2020-09-15 |
Package structure having magnetic bonding between substrates Grant 10,157,885 - Huang , et al. Dec | 2018-12-18 |
Package Structure And Method For Forming The Same App 20180033773 - HUANG; Peter Yu-Fei ;   et al. | 2018-02-01 |
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Three-dimensional stacking structure and manufacturing method thereof Grant 9,748,206 - Huang , et al. August 29, 2 | 2017-08-29 |
RF seal ring structure Grant 6,943,063 - Tsai , et al. September 13, 2 | 2005-09-13 |
RF seal ring structure App 20040217477 - Tsai, Chaochieh ;   et al. | 2004-11-04 |
Self-aligned process for a stacked gate RF MOSFET device Grant 6,737,310 - Tsai , et al. May 18, 2 | 2004-05-18 |
Lossless microstrip line in CMOS process Grant 6,664,635 - Tsai , et al. December 16, 2 | 2003-12-16 |
Structure to reduce the degradation of the Q value of an inductor caused by via resistance Grant 6,636,139 - Tsai , et al. October 21, 2 | 2003-10-21 |
Lossless microstrip line in CMOS process App 20030071360 - Tsai, Chaochieh ;   et al. | 2003-04-17 |
Self-aligned process for a stacked gate RF MOSFET device App 20030008450 - Tsai, Chaochieh ;   et al. | 2003-01-09 |
Self-aligned process for a stacked gate RF MOSFET device Grant 6,465,294 - Tsai , et al. October 15, 2 | 2002-10-15 |
High Q inductor with Cu damascene via/trench etching simultaneous module Grant 6,444,517 - Hsu , et al. September 3, 2 | 2002-09-03 |
Method to reduce a reverse narrow channel effect for MOSFET devices Grant 6,245,639 - Tsai , et al. June 12, 2 | 2001-06-12 |
Process of making CMOS device structure having an anti-SCE block implant Grant 6,232,164 - Tsai , et al. May 15, 2 | 2001-05-15 |
Process for manufacturing a single asymmetric pocket implant Grant 6,171,913 - Wang , et al. January 9, 2 | 2001-01-09 |
Ti-rich TiN insertion layer for suppression of bridging during a salicide procedure Grant 6,121,139 - Chang , et al. September 19, 2 | 2000-09-19 |
Silicon and arsenic double implanted pre-amorphization process for salicide technology Grant 6,037,204 - Chang , et al. March 14, 2 | 2000-03-14 |
Germanium and arsenic double implanted pre-amorphization process for salicide technology Grant 6,030,863 - Chang , et al. February 29, 2 | 2000-02-29 |
CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation Grant 5,757,045 - Tsai , et al. May 26, 1 | 1998-05-26 |
Method of fabricating MOSFET devices Grant 5,702,972 - Tsai , et al. December 30, 1 | 1997-12-30 |
MOS device structure and integration method Grant 5,691,212 - Tsai , et al. November 25, 1 | 1997-11-25 |
Isolation trench with a rounded top edge using an etch buffer layer Grant 5,674,775 - Ho , et al. October 7, 1 | 1997-10-07 |
CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation process Grant 5,668,024 - Tsai , et al. September 16, 1 | 1997-09-16 |