loadpatents
name:-0.010260105133057
name:-0.024292945861816
name:-0.00054192543029785
Tsai; Chaochieh Patent Filings

Tsai; Chaochieh

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsai; Chaochieh.The latest application filed is for "package structure and method for forming the same".

Company Profile
0.20.5
  • Tsai; Chaochieh - Cupertino CA
  • Tsai; Chaochieh - HsinChu TW
  • Tsai, Chaochieh - Hsin-Chu TW
  • Tsai; Chaochieh - Hsih-chu TW
  • Tsai; ChaoChieh - Taichung TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Three-dimensional stacking structure
Grant 10,777,534 - Huang , et al. Sept
2020-09-15
Package structure having magnetic bonding between substrates
Grant 10,157,885 - Huang , et al. Dec
2018-12-18
Package Structure And Method For Forming The Same
App 20180033773 - HUANG; Peter Yu-Fei ;   et al.
2018-02-01
Three-dimensional Stacking Structure
App 20180012868 - Huang; Peter Yu Fei ;   et al.
2018-01-11
Three-dimensional stacking structure and manufacturing method thereof
Grant 9,748,206 - Huang , et al. August 29, 2
2017-08-29
RF seal ring structure
Grant 6,943,063 - Tsai , et al. September 13, 2
2005-09-13
RF seal ring structure
App 20040217477 - Tsai, Chaochieh ;   et al.
2004-11-04
Self-aligned process for a stacked gate RF MOSFET device
Grant 6,737,310 - Tsai , et al. May 18, 2
2004-05-18
Lossless microstrip line in CMOS process
Grant 6,664,635 - Tsai , et al. December 16, 2
2003-12-16
Structure to reduce the degradation of the Q value of an inductor caused by via resistance
Grant 6,636,139 - Tsai , et al. October 21, 2
2003-10-21
Lossless microstrip line in CMOS process
App 20030071360 - Tsai, Chaochieh ;   et al.
2003-04-17
Self-aligned process for a stacked gate RF MOSFET device
App 20030008450 - Tsai, Chaochieh ;   et al.
2003-01-09
Self-aligned process for a stacked gate RF MOSFET device
Grant 6,465,294 - Tsai , et al. October 15, 2
2002-10-15
High Q inductor with Cu damascene via/trench etching simultaneous module
Grant 6,444,517 - Hsu , et al. September 3, 2
2002-09-03
Method to reduce a reverse narrow channel effect for MOSFET devices
Grant 6,245,639 - Tsai , et al. June 12, 2
2001-06-12
Process of making CMOS device structure having an anti-SCE block implant
Grant 6,232,164 - Tsai , et al. May 15, 2
2001-05-15
Process for manufacturing a single asymmetric pocket implant
Grant 6,171,913 - Wang , et al. January 9, 2
2001-01-09
Ti-rich TiN insertion layer for suppression of bridging during a salicide procedure
Grant 6,121,139 - Chang , et al. September 19, 2
2000-09-19
Silicon and arsenic double implanted pre-amorphization process for salicide technology
Grant 6,037,204 - Chang , et al. March 14, 2
2000-03-14
Germanium and arsenic double implanted pre-amorphization process for salicide technology
Grant 6,030,863 - Chang , et al. February 29, 2
2000-02-29
CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation
Grant 5,757,045 - Tsai , et al. May 26, 1
1998-05-26
Method of fabricating MOSFET devices
Grant 5,702,972 - Tsai , et al. December 30, 1
1997-12-30
MOS device structure and integration method
Grant 5,691,212 - Tsai , et al. November 25, 1
1997-11-25
Isolation trench with a rounded top edge using an etch buffer layer
Grant 5,674,775 - Ho , et al. October 7, 1
1997-10-07
CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation process
Grant 5,668,024 - Tsai , et al. September 16, 1
1997-09-16

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