Trouilloud; Philip Louis

Patent Applications and Registrations

Patent applications and USPTO patent grants for Trouilloud; Philip Louis.The latest application filed is for "magnetic materials having superparamagnetic particles".

Company Profile

0.20.14

Trouilloud; Philip Louis - Norwood NJ US
Trouilloud; Philip Louis - Nonwood NJ
Trouilloud; Philip Louis - Mahwah NJ
Trouilloud; Philip Louis - Yorktown Heights NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic materials having superparamagnetic particles Grant 8,901,685 - Ingvarsson , et al. December 2, 2	2014-12-02
Techniques for electrically characterizing tunnel junction film stacks with little or no processing Grant 8,102,174 - Worledge , et al. January 24, 2	2012-01-24
Techniques for electrically characterizing tunnel junction film stacks with little or no processing Grant 8,027,185 - Worledge , et al. September 27, 2	2011-09-27
Techniques for electrically characterizing tunnel junction film stacks with little or no processing Grant 8,004,278 - Worledge , et al. August 23, 2	2011-08-23
Magnetic Materials Having Superparamagnetic Particles App 20110039020 - Ingvarsson; Snorri Thorgeir ; et al.	2011-02-17
Magnetic materials having superparamagnetic particles Grant 7,880,208 - Ingvarsson , et al. February 1, 2	2011-02-01
Wall nucleation propagation for racetrack memory Grant 7,768,809 - Trouilloud August 3, 2	2010-08-03
Wall Nucleation Propagation for Racetrack Memory App 20100085793 - Trouilloud; Philip Louis	2010-04-08
Techniques for Electrically Characterizing Tunnel Junction Film Stacks with Little or no Processing App 20100023287 - Worledge; Daniel Christopher ; et al.	2010-01-28
Techniques for Electrically Characterizing Tunnel Junction Film Stacks with Little or no Processing App 20090309587 - Worledge; Daniel Christopher ; et al.	2009-12-17
Wafer for electrically characterizing tunnel junction film stacks with little or no processing Grant 7,622,735 - Worledge , et al. November 24, 2	2009-11-24
Techniques for Electrically Characterizing Tunnel Junction Film Stacks with Little or no Processing App 20090267597 - Worledge; Daniel Christopher ; et al.	2009-10-29
Wafer For Electrically Characterizing Tunnel Junction Film Stacks With Little Or No Processing App 20090261820 - Worledge; Daniel Christopher ; et al.	2009-10-22
Active compensation for operating point drift in MRAM write operation Grant 7,453,747 - Abraham , et al. November 18, 2	2008-11-18
Active Compensation for Operating Point Drift in MRAM Write Operation App 20080019169 - Abraham; David William ; et al.	2008-01-24
Active compensation for operating point drift in MRAM write operation Grant 7,286,421 - Abraham , et al. October 23, 2	2007-10-23
Magnetic Materials Having Superparamagnetic Particles App 20070224454 - Ingvarsson; Snorri Thorgeir ; et al.	2007-09-27
Field ramp down for pinned synthetic antiferromagnet Grant 7,061,787 - Trouilloud , et al. June 13, 2	2006-06-13
Field ramp down for pinned synthetic antiferromagnet App 20050243600 - Trouilloud, Philip Louis ; et al.	2005-11-03
Sensor compensation for environmental variations for magnetic random access memory Grant 6,958,929 - Abraham , et al. October 25, 2	2005-10-25
Techniques for electrically characterizing tunnel junction film stacks with little or no processing Grant 6,927,569 - Worledge , et al. August 9, 2	2005-08-09
Active compensation for operating point drift in MRAM write operation App 20050102581 - Abraham, David William ; et al.	2005-05-12
Sensor compensation for environmental variations for magnetic random access memory App 20050088875 - Abraham, David William ; et al.	2005-04-28
Magnetic materials having superparamagnetic particles App 20040253437 - Ingvarsson, Snorri Thorgeir ; et al.	2004-12-16
Techniques for electrically characterizing tunnel junction film stacks with little or no processing App 20040051522 - Worledge, Daniel Christopher ; et al.	2004-03-18
Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Grant 6,590,750 - Abraham , et al. July 8, 2	2003-07-08
Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Grant 6,452,764 - Abraham , et al. September 17, 2	2002-09-17
Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices Grant 6,368,878 - Abraham , et al. April 9, 2	2002-04-09
Limiting Magnetoresistive Electrical Interaction To A Preferred Portion Of A Magnetic Region In Magnetic Devices App 20010040778 - ABRAHAM, DAVID WILLIAM ; et al.	2001-11-15
Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices Grant 6,104,633 - Abraham , et al. August 15, 2	2000-08-15
Magnetic memory devices having multiple magnetic tunnel junctions therein Grant 6,072,718 - Abraham , et al. June 6, 2	2000-06-06
Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices Grant 5,946,228 - Abraham , et al. August 31, 1	1999-08-31
Magnetic devices and sensors based on perovskite manganese oxide materials Grant 5,792,569 - Sun , et al. August 11, 1	1998-08-11

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