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Ferro-FET device with buried buffer/ferroelectric layer stack Grant 10,163,933 - Richter , et al. Dec | 2018-12-25 |
NVM device in SOI technology and method of fabricating an according device Grant 10,084,057 - Beyer , et al. September 25, 2 | 2018-09-25 |
System And Method For Status-dependent Controlling Of A Substrate Ambient In Microprocessing App 20180269081 - Bayha; Boris ;   et al. | 2018-09-20 |
Nvm Device In Soi Technology And Method Of Fabricating An According Device App 20180053832 - Beyer; Sven ;   et al. | 2018-02-22 |
Methods for fabricating integrated circuits with isolation regions having uniform step heights Grant 9,508,588 - Grass , et al. November 29, 2 | 2016-11-29 |
Methods For Fabricating Integrated Circuits With Isolation Regions Having Uniform Step Heights App 20160126132 - Grass; Carsten ;   et al. | 2016-05-05 |
Semiconductor device with field-inducing structure Grant 9,236,482 - Goldbach , et al. January 12, 2 | 2016-01-12 |
Semiconductor Device With Field-inducing Structure App 20150243789 - Goldbach; Matthias ;   et al. | 2015-08-27 |
Transistor Device With Strained Layer App 20150179740 - Triyoso; Dina H. ;   et al. | 2015-06-25 |
FinFET method comprising high-K dielectric Grant 9,064,900 - Goldbach , et al. June 23, 2 | 2015-06-23 |
Method of forming a material layer in a semiconductor structure Grant 8,993,459 - Grass , et al. March 31, 2 | 2015-03-31 |
Semiconductor Device Structure And Method For Forming A Semiconductor Device Structure App 20150008536 - Goldbach; Matthias ;   et al. | 2015-01-08 |
Metal gate structure for semiconductor devices Grant 8,872,285 - Scheiper , et al. October 28, 2 | 2014-10-28 |
Method For Forming A Gate Electrode Of A Semiconductor Device, Gate Electrode Structure For A Semiconductor Device And According Semiconductor Device Structure App 20140264626 - Yan; Ran ;   et al. | 2014-09-18 |
Metal Gate Structure For Semiconductor Devices App 20140246735 - Scheiper; Thilo ;   et al. | 2014-09-04 |
Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof Grant 8,823,138 - Goldbach , et al. September 2, 2 | 2014-09-02 |
CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal Grant 8,735,240 - Kelwing , et al. May 27, 2 | 2014-05-27 |
Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process Grant 8,735,253 - Kronholz , et al. May 27, 2 | 2014-05-27 |
Method Of Forming A Material Layer In A Semiconductor Structure App 20140065808 - Grass; Carsten ;   et al. | 2014-03-06 |
Passivating point defects in high-K gate dielectric layers during gate stack formation Grant 8,658,490 - Erben , et al. February 25, 2 | 2014-02-25 |
Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process Grant 8,609,482 - Kronholz , et al. December 17, 2 | 2013-12-17 |
Cet And Gate Current Leakage Reduction In High-k Metal Gate Electrode Structures By Heat Treatment After Diffusion Layer Removal App 20130288435 - Kelwing; Torben ;   et al. | 2013-10-31 |
Multiple High-k Metal Gate Stacks In A Field Effect Transistor App 20130277766 - Kelwing; Torben ;   et al. | 2013-10-24 |
Enhanced Device Reliability Of A Semiconductor Device By Providing Superior Process Conditions In High-k Film Growth App 20130280873 - Erben; Elke ;   et al. | 2013-10-24 |
Passivating Point Defects In High-k Gate Dielectric Layers During Gate Stack Formation App 20130267086 - Erben; Elke ;   et al. | 2013-10-10 |
Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization Grant 8,525,289 - Carter , et al. September 3, 2 | 2013-09-03 |
Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process Grant 8,486,786 - Kronholz , et al. July 16, 2 | 2013-07-16 |
Patterning of Sensitive Metal-Containing Layers With Superior Mask Material Adhesion by Providing a Modified Surface Layer App 20130126984 - Reimer; Berthold ;   et al. | 2013-05-23 |
Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning Grant 8,445,344 - Carter , et al. May 21, 2 | 2013-05-21 |
Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy Grant 8,378,432 - Carter , et al. February 19, 2 | 2013-02-19 |
Work function adjustment in high-k gate stacks including gate dielectrics of different thickness Grant 8,349,695 - Scheiper , et al. January 8, 2 | 2013-01-08 |
Enhancing Interface Characteristics Between A Channel Semiconductor Alloy And A Gate Dielectric By An Oxidation Process App 20120282760 - Kronholz; Stephan ;   et al. | 2012-11-08 |
Semiconductor device comprising a metal gate stack of reduced height and method of forming the same Grant 8,293,610 - Beyer , et al. October 23, 2 | 2012-10-23 |
Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process Grant 8,247,282 - Kronholz , et al. August 21, 2 | 2012-08-21 |
Adjusting Threshold Voltage For Sophisticated Transistors By Diffusing A Gate Dielectric Cap Layer Material Prior To Gate Dielectric Stabilization App 20120193727 - Carter; Richard ;   et al. | 2012-08-02 |
Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization Grant 8,198,192 - Carter , et al. June 12, 2 | 2012-06-12 |
In situ monitoring of metal contamination during microstructure processing Grant 8,158,065 - Trentzsch , et al. April 17, 2 | 2012-04-17 |
Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment Grant 8,119,461 - Trentzsch , et al. February 21, 2 | 2012-02-21 |
Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography Grant 8,101,512 - Gerhardt , et al. January 24, 2 | 2012-01-24 |
Method of forming CMOS device having gate insulation layers of different type and thickness Grant 8,021,942 - Wei , et al. September 20, 2 | 2011-09-20 |
Gate dielectrics of different thickness in PMOS and NMOS transistors Grant 7,994,037 - Trentzsch , et al. August 9, 2 | 2011-08-09 |
Enhancing Interface Characteristics Between A Channel Semiconductor Alloy And A Gate Dielectric By An Oxidation Process App 20110129970 - Kronholz; Stephan ;   et al. | 2011-06-02 |
Work Function Adjustment In High-k Gate Stacks Including Gate Dielectrics Of Different Thickness App 20110049642 - Scheiper; Thilo ;   et al. | 2011-03-03 |
Reducing The Creation Of Charge Traps At Gate Dielectrics In Mos Transistors By Performing A Hydrogen Treatment App 20110045665 - Trentzsch; Martin ;   et al. | 2011-02-24 |
Uniform High-k Metal Gate Stacks By Adjusting Threshold Voltage For Sophisticated Transistors By Diffusing A Metal Species Prior To Gate Patterning App 20100327373 - Carter; Richard ;   et al. | 2010-12-30 |
Enhancing Uniformity Of A Channel Semiconductor Alloy By Forming Sti Structures After The Growth Process App 20100289090 - Kronholz; Stephan ;   et al. | 2010-11-18 |
Adjusting Threshold Voltage For Sophisticated Transistors By Diffusing A Gate Dielectric Cap Layer Material Prior To Gate Dielectric Stabilization App 20100289089 - Carter; Richard ;   et al. | 2010-11-18 |
Maintaining Integrity Of A High-k Gate Stack By An Offset Spacer Used To Determine An Offset Of A Strain-inducing Semiconductor Alloy App 20100244155 - Carter; Richard ;   et al. | 2010-09-30 |
Adjusting Of A Non-silicon Fraction In A Semiconductor Alloy During Transistor Fabrication By An Intermediate Oxidation Process App 20100221883 - Kronholz; Stephan ;   et al. | 2010-09-02 |
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques Grant 7,745,334 - Press , et al. June 29, 2 | 2010-06-29 |
In Situ Monitoring Of Metal Contamination During Microstructure Processing App 20100077839 - Trentzsch; Martin ;   et al. | 2010-04-01 |
Gate Dielectrics Of Different Thickness In Pmos And Nmos Transistors App 20100025770 - Trentzsch; Martin ;   et al. | 2010-02-04 |
Semiconductor Device Comprising A Metal Gate Stack Of Reduced Height And Method Of Forming The Same App 20090218639 - Beyer; Sven ;   et al. | 2009-09-03 |
Reducing The Creation Of Charge Traps At Gate Dielectrics In Mos Transistors By Performing A Hydrogen Treatment App 20090170339 - Trentzsch; Martin ;   et al. | 2009-07-02 |
Cmos Device Having Gate Insulation Layers Of Different Type And Thickness And A Method Of Forming The Same App 20090057769 - Wei; Andy ;   et al. | 2009-03-05 |
Technique For Locally Adapting Transistor Characteristics By Using Advanced Laser/flash Anneal Techniques App 20080081471 - Press; Patrick ;   et al. | 2008-04-03 |
Method Of Enhancing Lithography Capabilities During Gate Formation In Semiconductors Having A Pronounced Surface Topography App 20080026552 - Gerhardt; Martin ;   et al. | 2008-01-31 |