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Patent applications and USPTO patent grants for Toyonaga; Motohiro.The latest application filed is for "electronic component and manufacturing method thereof".
Patent | Date |
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Electronic component and manufacturing method thereof Grant 10,070,530 - Toyonaga , et al. September 4, 2 | 2018-09-04 |
Electronic Component And Manufacturing Method Thereof App 20180020549 - TOYONAGA; Motohiro ;   et al. | 2018-01-18 |
N-channel double diffusion MOS transistor with p-type buried layer underneath n-type drift and drain layers, and semiconductor composite device Grant 9,812,565 - Sawase , et al. November 7, 2 | 2017-11-07 |
N-channel Double Diffusion Mos Transistor, And Semiconductor Composite Device App 20160035885 - SAWASE; Kensuke ;   et al. | 2016-02-04 |
N-channel double diffusion MOS transistor with P-type buried layer under N-type drift layer, and semiconductor composite device Grant 9,190,513 - Sawase , et al. November 17, 2 | 2015-11-17 |
N-channel Double Diffusion Mos Transistor, And Semiconductor Composite Device App 20140210002 - SAWASE; Kensuke ;   et al. | 2014-07-31 |
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