| Patent | Date |
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Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method
Grant 11,261,539 - Torimi , et al. March 1, 2 | 2022-03-01 |
SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER
App 20210301421 - NAGAYA; Masatake ; et al. | 2021-09-30 |
Surface treatment method for SiC substrate
Grant 10,665,465 - Kaneko , et al. | 2020-05-26 |
Heat treatment vessel for single-crystal silicon carbide substrate and etching method
Grant 10,665,485 - Torimi , et al. | 2020-05-26 |
Reformed Sic Wafer Manufacturing Method, Epitaxial Layer-attached Sic Wafer, Method For Manufacturing Same, And Surface Processi
App 20200095703 - Torimi; Satoshi ; et al. | 2020-03-26 |
Etching method for SiC substrate and holding container
Grant 10,388,536 - Torimi , et al. A | 2019-08-20 |
Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
Grant 10,358,741 - Torimi , et al. July 23, 2 | 2019-07-23 |
METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER
App 20190010629 - YABUKI; Norihito ; et al. | 2019-01-10 |
Heat Treatment Vessel For Single-crystal Silicon Carbide Substrate And Etching Method
App 20180301359 - Torimi; Satoshi ; et al. | 2018-10-18 |
SiC substrate treatment method
Grant 10,014,176 - Yabuki , et al. July 3, 2 | 2018-07-03 |
Method for estimating depth of latent scratches in SiC substrates
Grant 9,991,175 - Torimi , et al. June 5, 2 | 2018-06-05 |
METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER
App 20180069084 - TORIMI; SATOSHI ; et al. | 2018-03-08 |
SURFACE TREATMENT METHOD FOR SiC SUBSTRATE
App 20170345672 - Kaneko; Tadaaki ; et al. | 2017-11-30 |
Etching Method For Sic Substrate And Holding Container
App 20170323797 - Torimi; Satoshi ; et al. | 2017-11-09 |
SiC SUBSTRATE TREATMENT METHOD
App 20170323792 - Yabuki; Norihito ; et al. | 2017-11-09 |
METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER
App 20170236905 - Torimi; Satoshi ; et al. | 2017-08-17 |
Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
Grant 9,725,822 - Torimi , et al. August 8, 2 | 2017-08-08 |
Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus
Grant 9,704,733 - Torimi , et al. July 11, 2 | 2017-07-11 |
Semiconductor device manufacturing apparatus
Grant 9,644,894 - Torimi , et al. May 9, 2 | 2017-05-09 |
SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD
App 20170121848 - Torimi; Satoshi ; et al. | 2017-05-04 |
METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHOD
App 20170114475 - Yabuki; Norihito ; et al. | 2017-04-27 |
METHOD FOR ESTIMATING DEPTH OF LATENT SCRATCHES IN SiC SUBSTRATES
App 20170110378 - Torimi; Satoshi ; et al. | 2017-04-20 |
Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate
Grant 9,570,306 - Torimi , et al. February 14, 2 | 2017-02-14 |
Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
Grant 9,447,517 - Torimi , et al. September 20, 2 | 2016-09-20 |
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
Grant 9,252,206 - Torimi , et al. February 2, 2 | 2016-02-02 |
SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SINGLE CRYSTAL SiC SUBSTRATE
App 20150294867 - Torimi; Satoshi ; et al. | 2015-10-15 |
Storing Container, Storing Container Manufacturing Method, Semiconductor Manufacturing Method, And Semiconductor Manufacturing Apparatus
App 20150255314 - Torimi; Satoshi ; et al. | 2015-09-10 |
Semiconductor Device Manufacturing Apparatus
App 20150249025 - Torimi; Satoshi ; et al. | 2015-09-03 |
Unit For Liquid Phase Epitaxial Growth Of Monocrystalline Silicon Carbide, And Method For Liquid Phase Epitaxial Growth Of Monocrystalline Silicon Carbide
App 20130285060 - Torimi; Satoshi ; et al. | 2013-10-31 |
Seed Material For Liquid Phase Epitaxial Growth Of Monocrystalline Silicon Carbide, And Method For Liquid Phase Epitaxial Growth Of Monocrystalline Silicon Carbide
App 20130269597 - Torimi; Satoshi ; et al. | 2013-10-17 |
Feed Material For Epitaxial Growth Of Monocrystalline Silicon Carbide, And Method For Epitaxial Growth Of Monocrystalline Silicon Carbide
App 20130269596 - Torimi; Satoshi ; et al. | 2013-10-17 |
Seed Material For Liquid Phase Epitaxial Growth Of Monocrystalline Silicon Carbide, And Method For Liquid Phase Epitaxial Growth Of Monocrystalline Silicon
App 20130263774 - Torimi; Satoshi ; et al. | 2013-10-10 |
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