Tomozawa; Hideki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tomozawa; Hideki.The latest application filed is for "flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting".

Company Profile

0.9.7

Tomozawa; Hideki - Ichihara JP
Tomozawa; Hideki - Chiba JP
Tomozawa; Hideki - Ichihara-shi JP
Tomozawa; Hideki - Chiba-shi Chiba
Tomozawa; Hideki - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting Grant 8,022,419 - Yasuda , et al. September 20, 2	2011-09-20
N-type group III nitride semiconductor layered structure Grant 7,855,386 - Bandoh , et al. December 21, 2	2010-12-21
Pn junction type group III nitride semiconductor light-emitting device Grant 7,781,777 - Yasuda , et al. August 24, 2	2010-08-24
Flip-chip Type Semiconductor Light-emitting Device, Method For Manufacturing Flip-chip Type Semiconductor Light-emitting Device, Printed Circuit Board For Flip-chip Type Semiconductor Light-emitting Device, Mounting Structure For Flip-chip Type Semiconductor Light-emitting Device, And Light-emitting App 20090159902 - Yasuda; Takaki ; et al.	2009-06-25
Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof Grant 7,488,971 - Kobayakawa , et al. February 10, 2	2009-02-10
Gallium nitride-based semiconductor device Grant 7,453,091 - Kobayakawa , et al. November 18, 2	2008-11-18
Gallium nitride-based semiconductor device Grant 7,436,045 - Kobayakawa , et al. October 14, 2	2008-10-14
Pn Junction Type Group III Nitride Semiconductor Light-Emitting Device App 20080230794 - Yasuda; Takaki ; et al.	2008-09-25
N-Type Group III Nitride Semiconductor Layered Structure App 20080230800 - Bandoh; Akira ; et al.	2008-09-25
Gallium nitride-based compound semiconductor light-emitting device and electrode for the same Grant 7,402,841 - Tomozawa , et al. July 22, 2	2008-07-22
Gallium nitride-based semiconductor device App 20070187693 - Kobayakawa; Masato ; et al.	2007-08-16
Gallium nitride-based semiconductor device App 20070152232 - Kobayakawa; Masato ; et al.	2007-07-05
Gallium nitride-based compound semiconductor light-emitting device and electrode for the same App 20070040183 - Tomozawa; Hideki ; et al.	2007-02-22
Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof App 20070012932 - Kobayakawa; Masato ; et al.	2007-01-18
Method for suppression of electrification Grant 5,437,893 - Murai , et al. * August 1, 1	1995-08-01
Method for suppression of electrification Grant 5,256,454 - Murai , et al. October 26, 1	1993-10-26

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