loadpatents
name:-0.02603006362915
name:-0.019370079040527
name:-0.0040278434753418
TOMITA; Kazuyoshi Patent Filings

TOMITA; Kazuyoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for TOMITA; Kazuyoshi.The latest application filed is for "nucleic acid drug targeting murf1".

Company Profile
3.18.19
  • TOMITA; Kazuyoshi - Osaka JP
  • Tomita; Kazuyoshi - Nagakute JP
  • TOMITA; Kazuyoshi - Nagakute-shi JP
  • Tomita; Kazuyoshi - Nagoya JP
  • Tomita; Kazuyoshi - Nagoya-shi JP
  • Tomita; Kazuyoshi - Nagoya-city JP
  • Tomita; Kazuyoshi - Aichi-Ken JP
  • Tomita; Kazuyoshi - Aichi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Nucleic Acid Drug Targeting Murf1
App 20220267778 - FUJIWARA; Takahiro ;   et al.
2022-08-25
Nitride semiconductor device and method of manufacturing nitride semiconductor device
Grant 10,763,333 - Tomita , et al. Sep
2020-09-01
Nitride Semiconductor Device And Method Of Manufacturing Nitride Semiconductor Device
App 20190305090 - TOMITA; Kazuyoshi ;   et al.
2019-10-03
Semiconductor device and method of manufacturing the same
Grant 10,381,469 - Tsuchiya , et al. A
2019-08-13
Semiconductor device with high electron mobility transistor
Grant 9,818,856 - Hoshi , et al. November 14, 2
2017-11-14
Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer
Grant 9,728,609 - Narita , et al. August 8, 2
2017-08-08
Apparatus and method of manufacturing a support layer
Grant 9,536,996 - Funabashi , et al. January 3, 2
2017-01-03
Semiconductor Device And Method Of Manufacturing The Same
App 20160372587 - TSUCHIYA; Yoshinori ;   et al.
2016-12-22
Apparatus And Method Of Manufacturing The Same
App 20160043066 - FUNABASHI; Hirofumi ;   et al.
2016-02-11
Layered Substrate With A Miscut Angle Comprising A Silicon Single Crystal Substrate And A Group-iii Nitride Single Crystal Layer
App 20150053996 - Narita; Tetsuo ;   et al.
2015-02-26
Semiconductor Device
App 20140231874 - Hoshi; Shinichi ;   et al.
2014-08-21
Group III-V semiconductor device and method for producing the same
Grant 8,420,502 - Ando , et al. April 16, 2
2013-04-16
Group III-V semiconductor device and method for producing the same
App 20100151612 - Ando; Masanobu ;   et al.
2010-06-17
Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrode
Grant 7,646,036 - Kozawa , et al. January 12, 2
2010-01-12
Group III-V Semiconductor device and method for producing the same
App 20080237629 - Ando; Masanobu ;   et al.
2008-10-02
Electrode and group III nitride-based compound semiconductor light-emitting device having the electrode
App 20080185609 - KOZAWA; Takahiro ;   et al.
2008-08-07
Light source
Grant 7,342,364 - Kato , et al. March 11, 2
2008-03-11
Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device
Grant 7,163,876 - Nagai , et al. January 16, 2
2007-01-16
Production method for semiconductor crystal and semiconductor luminous element
Grant 7,052,979 - Nagai , et al. May 30, 2
2006-05-30
Light source
App 20060061302 - Kato; Satoru ;   et al.
2006-03-23
Production method for semiconductor substrate and semiconductor element
Grant 7,011,707 - Nagai , et al. March 14, 2
2006-03-14
Method for producing semiconductor crystal
Grant 6,964,705 - Nagai , et al. November 15, 2
2005-11-15
Semiconductor laser and method for producing the same
App 20050220157 - Nakamura, Ryo ;   et al.
2005-10-06
Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
Grant 6,844,246 - Nagai , et al. January 18, 2
2005-01-18
Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device
App 20040219702 - Nagai, Seiji ;   et al.
2004-11-04
Production method for semiconductor crystal and semiconductor luminous element
App 20040123796 - Nagai, Seiji ;   et al.
2004-07-01
Production method for semiconductor substrate and semiconductor element
App 20040115937 - Nagai, Seiji ;   et al.
2004-06-17
Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
App 20040087115 - Nagai, Seiji ;   et al.
2004-05-06
Semiconductor crystal growing method and semiconductor light-emitting device
App 20040077166 - Nagal, Seiji ;   et al.
2004-04-22
Group III nitride compound semiconductor element and method for producing the same
Grant 6,716,655 - Nagai , et al. April 6, 2
2004-04-06
Method for producing semiconductor crystal
App 20040016396 - Nagai, Seiji ;   et al.
2004-01-29
Group III nitride compound semiconductor light-emitting element
Grant 6,649,943 - Shibata , et al. November 18, 2
2003-11-18
Group III nitride compound semiconductor light-emitting element
App 20030001170 - Shibata, Naoki ;   et al.
2003-01-02
Group III nitride compound semiconductor element and method for producing the same
App 20020197841 - Nagai, Seiji ;   et al.
2002-12-26
Ultra-high density memory device
Grant 5,940,314 - Suzuki , et al. August 17, 1
1999-08-17
Group III nitride compound semiconductor laser diodes
Grant 5,889,806 - Nagai , et al. March 30, 1
1999-03-30

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