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name:-0.0055141448974609
name:-0.012099981307983
name:-0.00043392181396484
Tomioka; Junsuke Patent Filings

Tomioka; Junsuke

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tomioka; Junsuke.The latest application filed is for "control system and method for controlled object in time variant system with dead time, such as single crystal production device by czochralski method".

Company Profile
0.13.5
  • Tomioka; Junsuke - Kanagawa JP
  • Tomioka; Junsuke - Hiratsuka JP
  • Tomioka; Junsuke - Nagasaki JP
  • Tomioka, Junsuke - Hiratsuka-shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal
Grant 8,246,744 - Nakamura , et al. August 21, 2
2012-08-21
Single crystal semiconductor manufacturing apparatus and manufacturing method
Grant 8,241,424 - Iida , et al. August 14, 2
2012-08-14
Control system and method for controlled object in time variant system with dead time, such as single crystal production device by czochralski method
Grant 8,150,784 - Bandoh , et al. April 3, 2
2012-04-03
Control System and Method for Controlled Object in Time Variant System With Dead Time, Such As Single Crystal Production Device by Czochralski Method
App 20100100217 - Bandoh; Kenichi ;   et al.
2010-04-22
Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal
App 20090210166 - Nakamura; Kozo ;   et al.
2009-08-20
Single Crystal Semiconductor Manufacturing Apparatus and Manufacturing Method
App 20090133617 - Iida; Tetsuhrio ;   et al.
2009-05-28
Semiconductor single crystal manufacturing apparatus and graphite crucible
Grant 7,390,361 - Iida , et al. June 24, 2
2008-06-24
Semiconductor Single Crystal Manufacturing Apparatus and Graphite Crucible
App 20070215038 - Iida; Tetsuhiro ;   et al.
2007-09-20
Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
Grant 7,226,506 - Iida , et al. June 5, 2
2007-06-05
Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
App 20050229840 - Iida, Tetsuhiro ;   et al.
2005-10-20
Apparatus for producing single crystal
Grant 6,315,827 - Kurosaka , et al. November 13, 2
2001-11-13
Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors
Grant 6,179,910 - Yokoyama , et al. January 30, 2
2001-01-30
Silicon wafer for hydrogen heat treatment and method for manufacturing the same
Grant 6,056,931 - Saishoji , et al. May 2, 2
2000-05-02
Single crystal pulling method
Grant 6,042,644 - Kurosaka , et al. March 28, 2
2000-03-28
Method of fabricating silicon single crystals
Grant 5,968,262 - Saishouji , et al. October 19, 1
1999-10-19
Apparatus for pulling up a single crystal
Grant 5,441,014 - Tomioka , et al. * August 15, 1
1995-08-15
Semiconductor wafer heat treatment method
Grant 5,385,115 - Tomioka , et al. January 31, 1
1995-01-31
Single crystal pulling apparatus
Grant 5,316,742 - Tomioka , et al. May 31, 1
1994-05-31

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