loadpatents
name:-0.059724092483521
name:-0.066003084182739
name:-0.0012581348419189
Tomasini; Pierre Patent Filings

Tomasini; Pierre

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tomasini; Pierre.The latest application filed is for "semiconductor structures including stacks of indium gallium nitride layers".

Company Profile
0.26.25
  • Tomasini; Pierre - Tempe AZ
  • Tomasini; Pierre - Phoenix AZ
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor structures including stacks of indium gallium nitride layers
Grant 9,276,070 - Figuet , et al. March 1, 2
2016-03-01
In-situ pre-clean prior to epitaxy
Grant 9,093,269 - Cody , et al. July 28, 2
2015-07-28
III-V semiconductor structures with diminished pit defects and methods for forming the same
Grant 8,975,165 - Figuet , et al. March 10, 2
2015-03-10
Semiconductor Structures Including Stacks Of Indium Gallium Nitride Layers
App 20140217419 - Figuet; Christophe ;   et al.
2014-08-07
Deposition methods for the formation of III/V semiconductor materials, and related structures
Grant 8,742,428 - Figuet , et al. June 3, 2
2014-06-03
Epitaxial semiconductor deposition methods and structures
Grant 8,530,340 - Brabant , et al. September 10, 2
2013-09-10
In-situ Pre-clean Prior To Epitaxy
App 20130153961 - Cody; Nyles W. ;   et al.
2013-06-20
Deposition Methods For The Formation Of Iii/v Semiconductor Materials, And Related Structures
App 20130049012 - Figuet; Christophe ;   et al.
2013-02-28
Deposition methods for the formation of III/V semiconductor materials, and related structures
Grant 8,329,571 - Figuet , et al. December 11, 2
2012-12-11
Deposition Methods For The Formation Of Iii/v Semiconductor Materials, And Related Structures
App 20120225539 - Figuet; Christophe ;   et al.
2012-09-06
Iii-v Semiconductor Structures With Diminished Pit Defects And Methods For Forming The Same
App 20120211870 - Figuet; Christophe ;   et al.
2012-08-23
Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods
Grant 8,148,252 - Figuet , et al. April 3, 2
2012-04-03
Inhibitors for selective deposition of silicon containing films
Grant 7,939,447 - Bauer , et al. May 10, 2
2011-05-10
Selective deposition of silicon-containing films
Grant 7,816,236 - Bauer , et al. October 19, 2
2010-10-19
Semiconductor buffer structures
Grant 7,785,995 - Cody , et al. August 31, 2
2010-08-31
Methods of selectively depositing silicon-containing films
Grant 7,772,097 - Tomasini , et al. August 10, 2
2010-08-10
Stressor for engineered strain on channel
Grant 7,759,199 - Thomas , et al. July 20, 2
2010-07-20
Epitaxial semiconductor deposition methods and structures
Grant 7,682,947 - Brabant , et al. March 23, 2
2010-03-23
Epitaxial growth of relaxed silicon germanium layers
Grant 7,666,799 - Arena , et al. February 23, 2
2010-02-23
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Grant 7,648,690 - Bauer , et al. January 19, 2
2010-01-19
Epitaxial Semiconductor Deposition Methods And Structures
App 20100006024 - Brabant; Paul D. ;   et al.
2010-01-14
Epitaxial Growth Of Relaxed Silicon Germanium Layers
App 20090189185 - ARENA; Chantal ;   et al.
2009-07-30
Methods Of Selectively Depositing Silicon-containing Films
App 20090117717 - Tomasini; Pierre ;   et al.
2009-05-07
Inhibitors For Selective Deposition Of Silicon Containing Films
App 20090111246 - Bauer; Matthias ;   et al.
2009-04-30
Epitaxial growth of relaxed silicon germanium layers
Grant 7,514,372 - Arena , et al. April 7, 2
2009-04-07
Stressor For Engineered Strain On Channel
App 20090075029 - Thomas; Shawn ;   et al.
2009-03-19
Methods Of Making Substitutionally Carbon-doped Crystalline Si-containing Materials By Chemical Vapor Deposition
App 20090026496 - Bauer; Matthias ;   et al.
2009-01-29
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Grant 7,438,760 - Bauer , et al. October 21, 2
2008-10-21
Method to planarize and reduce defect density of silicon germanium
Grant 7,427,556 - Tomasini , et al. September 23, 2
2008-09-23
Epitaxial semiconductor deposition methods and structures
Grant 7,402,504 - Brabant , et al. July 22, 2
2008-07-22
Methods And Systems For Selectively Depositing Si-containing Films Using Chloropolysilanes
App 20080026149 - Tomasini; Pierre ;   et al.
2008-01-31
Semiconductor buffer structures
App 20070264801 - Cody; Nyles W. ;   et al.
2007-11-15
Epitaxial Semiconductor Deposition Methods And Structures
App 20070224786 - Brabant; Paul D. ;   et al.
2007-09-27
Apparatus and method for depositing silicon germanium films
App 20070155138 - Tomasini; Pierre ;   et al.
2007-07-05
Epitaxial semiconductor deposition methods and structures
Grant 7,238,595 - Brabant , et al. July 3, 2
2007-07-03
Epitaxial semiconductor deposition methods and structures
App 20060281322 - Brabant; Paul D. ;   et al.
2006-12-14
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
App 20060240630 - Bauer; Matthias ;   et al.
2006-10-26
Selective deposition of silicon-containing films
App 20060234504 - Bauer; Matthias ;   et al.
2006-10-19
Epitaxial semiconductor deposition methods and structures
Grant 7,115,521 - Brabant , et al. October 3, 2
2006-10-03
SiGe rectification process
Grant 7,022,593 - Arena , et al. April 4, 2
2006-04-04
Epitaxial semiconductor deposition methods and structures
App 20050092235 - Brabant, Paul D. ;   et al.
2005-05-05
Epitaxial growth of relaxed silicon germanium layers
App 20050051795 - Arena, Chantal ;   et al.
2005-03-10
Method to planarize and reduce defect density of silicon germanium
App 20040259333 - Tomasini, Pierre ;   et al.
2004-12-23
Epitaxial semiconductor deposition methods and structures
App 20040219735 - Brabant, Paul D. ;   et al.
2004-11-04
SiGe rectification process
App 20040219767 - Arena, Chantal J. ;   et al.
2004-11-04

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