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name:-0.0022890567779541
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Tokyo Eectron Limited Patent Filings

Tokyo Eectron Limited

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tokyo Eectron Limited.The latest application filed is for "method of scavenging intermediate formed by reaction of oxidoreductase with substrate".

Company Profile
0.2.1
  • Tokyo Eectron Limited - Tokyo JP
  • TOKYO EECTRON LIMITED - 3-6 AKASAKA 5-CHOME MINATO-KU TOKYO JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
CVD apparatus and method of cleaning the CVD apparatus
Grant 8,277,560 - Sakai , et al. October 2, 2
2012-10-02
Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD
Grant 7,704,893 - Kobayashi , et al. April 27, 2
2010-04-27
Method of scavenging intermediate formed by reaction of oxidoreductase with substrate
App 20060235558 - Tanaka; Osamu
2006-10-19

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