| Patent | Date |
|---|
High voltage field effect transistor with vertical current paths and method of making the same
Grant 11,450,768 - Togo September 20, 2 | 2022-09-20 |
Gate material-based capacitor and resistor structures and methods of forming the same
Grant 11,322,597 - Kodate , et al. May 3, 2 | 2022-05-03 |
High Voltage Field Effect Transistor With Vertical Current Paths And Method Of Making The Same
App 20220109054 - TOGO; Mitsuhiro | 2022-04-07 |
High Voltage Field Effect Transistor With Vertical Current Paths And Method Of Making The Same
App 20220109071 - TOGO; Mitsuhiro | 2022-04-07 |
Gate Material-based Capacitor And Resistor Structures And Methods Of Forming The Same
App 20220068915 - KODATE; Hokuto ; et al. | 2022-03-03 |
Gate Material-based Capacitor And Resistor Structures And Methods Of Forming The Same
App 20220069097 - KODATE; Hokuto ; et al. | 2022-03-03 |
Methods, apparatus and system for threshold voltage control in FinFET devices
Grant 10,325,824 - Togo , et al. | 2019-06-18 |
Methods, Apparatus And System For Threshold Voltage Control In Finfet Devices
App 20180358272 - Togo; Mitsuhiro ; et al. | 2018-12-13 |
Semiconductor Structure(s) With Extended Source/drain Channel Interfaces And Methods Of Fabrication
App 20170222054 - BANGHART; Edmund Kenneth ; et al. | 2017-08-03 |
Integrated circuits with replacement metal gates and methods for fabricating the same
Grant 9,698,241 - Patil , et al. July 4, 2 | 2017-07-04 |
Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication
Grant 9,679,990 - Banghart , et al. June 13, 2 | 2017-06-13 |
Integrated Circuits And Methods For Fabricating Integrated Circuits Having Replacement Metal Gate Electrodes
App 20160351675 - Patil; Suraj K. ; et al. | 2016-12-01 |
Temperature-controlled implanting of a diffusion-suppressing dopant in a semiconductor structure
Grant 9,508,602 - Togo November 29, 2 | 2016-11-29 |
Stress modulation in field effect transistors in reducing contact resistance and increasing charge carrier mobility
Grant 9,419,103 - Togo August 16, 2 | 2016-08-16 |
Stress Modulation In Field Effect Transistors In Reducing Contact Resistance And Increasing Charge Carrier Mobility
App 20160204226 - TOGO; Mitsuhiro | 2016-07-14 |
Temperature-controlled Implanting Of A Diffusion-suppressing Dopant In A Semiconductor Structure
App 20160204039 - TOGO; Mitsuhiro | 2016-07-14 |
Threshold voltage control for mixed-type non-planar semiconductor devices
Grant 9,362,284 - Togo , et al. June 7, 2 | 2016-06-07 |
Threshold Voltage Control For Mixed-type Non-planar Semiconductor Devices
App 20160049400 - TOGO; Mitsuhiro ; et al. | 2016-02-18 |
Semiconductor Structure(s) With Extended Source/drain Channel Interfaces And Methods Of Fabrication
App 20160043190 - BANGHART; Edmund Kenneth ; et al. | 2016-02-11 |
Threshold Voltage Control For Mixed-type Non-planar Semiconductor Devices
App 20150380409 - TOGO; Mitsuhiro ; et al. | 2015-12-31 |
Threshold voltage control for mixed-type non-planar semiconductor devices
Grant 9,209,186 - Togo , et al. December 8, 2 | 2015-12-08 |
Method for providing a gate metal layer of a transistor device and associated transistor
Grant 9,202,695 - Togo December 1, 2 | 2015-12-01 |
Method for Providing a Gate Metal Layer of a Transistor Device and Associated Transistor
App 20140332864 - Togo; Mitsuhiro | 2014-11-13 |
Semiconductor device having n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size
App 20080290392 - Togo; Mitsuhiro ; et al. | 2008-11-27 |
Semiconductor device n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size
Grant 7,442,632 - Togo , et al. October 28, 2 | 2008-10-28 |
MOS Devices with different gate lengths and different gate polysilicon grain sizes
Grant 7,355,256 - Togo , et al. April 8, 2 | 2008-04-08 |
Pattern for evaluating electric characteristics, method for evaluating electric characteristics, method for manufacturing semiconductor device and method for providing reliability assurance
App 20080038851 - Koyama; Shin ; et al. | 2008-02-14 |
Semiconductor device having n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size
App 20070080393 - Togo; Mitsuhiro ; et al. | 2007-04-12 |
Semiconductor device
App 20060226454 - Togo; Mitsuhiro ; et al. | 2006-10-12 |
Semiconductor device including a MIS transistor
Grant 6,459,126 - Mogami , et al. October 1, 2 | 2002-10-01 |
Semiconductor device including a MIS transistor
App 20020096721 - Mogami, Tohru ; et al. | 2002-07-25 |
Storage medium storing display control program, entertainment apparatus, and display control program
App 20020082078 - Togo, Mitsuhiro ; et al. | 2002-06-27 |
Storage medium storing display control program, entertainment apparatus, and display control program
App 20020075275 - Togo, Mitsuhiro ; et al. | 2002-06-20 |
Storage medium storing display control program, entertainment apparatus, and display control program
App 20020077181 - Togo, Mitsuhiro ; et al. | 2002-06-20 |
Method of producing a semiconductor device with reduced fringe capacitance and short channel effect
Grant 6,124,176 - Togo September 26, 2 | 2000-09-26 |
Field-effect transistor with a trench isolation structure and a method for manufacturing the same
Grant 6,063,694 - Togo May 16, 2 | 2000-05-16 |
Semiconductor device with reduced fringe capacitance and short channel effect
Grant 6,051,861 - Togo April 18, 2 | 2000-04-18 |
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