Toda; Fumihiko

Patent Applications and Registrations

Patent applications and USPTO patent grants for Toda; Fumihiko.The latest application filed is for "semiconductor device and method for manufacturing same".

Company Profile

0.3.10

Toda; Fumihiko - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device Grant 8,330,950 - Toda December 11, 2	2012-12-11
Semiconductor device and method for manufacturing same App 20100258845 - Marui; Toshiharu ; et al.	2010-10-14
Semiconductor device and manufacturing method Grant 7,763,910 - Marui , et al. July 27, 2	2010-07-27
Semiconductor device and manufacturing method App 20090242937 - Marui; Toshiharu ; et al.	2009-10-01
Heterojunction Field Effect Transistor App 20090212324 - TAMAI; Isao ; et al.	2009-08-27
Heterojunction field effect transistor and manufacturing method thereof App 20090045439 - Hoshi; Shinichi ; et al.	2009-02-19
Semiconductor device App 20090001381 - Marui; Toshiharu ; et al.	2009-01-01
Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device App 20080246959 - Toda; Fumihiko	2008-10-09
Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device App 20080206906 - Toda; Fumihiko	2008-08-28
Method for fabricating AIGaN/GaN-HEMT using selective regrowth App 20080176366 - Mita; Juro ; et al.	2008-07-24
Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device Grant 7,384,803 - Toda June 10, 2	2008-06-10
Wafer for semiconductor device fabrication, method of manufacture of same, and field effect transistor App 20060214187 - Mita; Juro ; et al.	2006-09-28
Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device App 20050054127 - Toda, Fumihiko	2005-03-10

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