Toba; Ryuichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Toba; Ryuichi.The latest application filed is for "iii nitride semiconductor device and method of manufacturing the same".

Company Profile

0.28.23

Toba; Ryuichi - Akita JP
Toba; Ryuichi - Akita-shi JP
Toba; Ryuichi - Tokyo JP
Toba; Ryuichi - Chiyoda-ku N/A JP
Toba; Ryuichi - Yokohama JP
Toba, Ryuichi - Yokohama-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
III nitride semiconductor device and method of manufacturing the same Grant 9,537,053 - Cho , et al. January 3, 2	2017-01-03
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Grant 9,502,603 - Cho , et al. November 22, 2	2016-11-22
Semiconductor device and method of manufacturing the same Grant 9,184,338 - Cho , et al. November 10, 2	2015-11-10
Iii Nitride Semiconductor Device And Method Of Manufacturing The Same App 20150263234 - Cho; Meoung Whan ; et al.	2015-09-17
Iii Nitride Semiconductor Device And Method Of Manufacturing The Same App 20150187887 - Cho; Meoung Whan ; et al.	2015-07-02
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Grant 9,012,935 - Cho , et al. April 21, 2	2015-04-21
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Grant 8,962,362 - Cho , et al. February 24, 2	2015-02-24
Semiconductor device and manufacturing method therefor Grant 8,963,290 - Toba , et al. February 24, 2	2015-02-24
Semiconductor device assembly and semiconductor device and method of manufacturing the same Grant 8,921,227 - Toba December 30, 2	2014-12-30
Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same Grant 8,878,189 - Toba , et al. November 4, 2	2014-11-04
Vertically Structured Group Iii Nitride Semiconductor Led Chip And Method For Manufacturing The Same App 20140319557 - Cho; Meoung Whan ; et al.	2014-10-30
Semiconductor Device And Method Of Manufacturing The Same App 20140284770 - Cho; Meoung Whan ; et al.	2014-09-25
Lighting element Grant D711,582 - Cho , et al. August 19, 2	2014-08-19
Lighting element Grant D711,581 - Cho , et al. August 19, 2	2014-08-19
Lighting element Grant D711,583 - Cho , et al. August 19, 2	2014-08-19
Light-emitting Element Chip And Manufacturing Method Therefor App 20140217457 - Cho; Meoung Whan ; et al.	2014-08-07
III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity Grant 8,736,025 - Toba , et al. May 27, 2	2014-05-27
Lighting elements Grant D703,863 - Cho , et al. April 29, 2	2014-04-29
Semiconductor Device And Manufacturing Method Therefor App 20140015105 - Toba; Ryuichi ; et al.	2014-01-16
Vertically Structured Group Iii Nitride Semiconductor Led Chip And Method For Manufacturing The Same App 20140001511 - CHO; Meoung Whan ; et al.	2014-01-02
Semiconductor Device Assembly And Semiconductor Device And Method Of Manufacturing The Same App 20130307133 - TOBA; Ryuichi	2013-11-21
Method Of Producing Group Iii Nitride Semiconductor Growth Substrate App 20130137246 - TOBA; Ryuichi ; et al.	2013-05-30
Vertically Structured Group Iii Nitride Semiconductor Led Chip And Method For Manufacturing The Same App 20120248458 - Cho; Meoung Whan ; et al.	2012-10-04
Group III nitride semiconductor and a manufacturing method thereof Grant 8,216,869 - Yao , et al. July 10, 2	2012-07-10
Group Iii Nitride Semiconductor Growth Substrate, Group Iii Nitride Semiconductor Epitaxial Substrate, Group Iii Nitride Semiconductor Element And Group Iii Nitride Semiconductor Free-standing Substrate, And Method Of Producing The Same App 20120061683 - Toba; Ryuichi ; et al.	2012-03-15
Iii-nitride Semiconductor Growth Substrate, Iii-nitride Semiconductor Epitaxial Substrate, Iii-nitride Semiconductor Element, Iii-nitride Semiconductor Freestanding Substrate, And Method For Fabricating These App 20110254135 - Toba; Ryuichi ; et al.	2011-10-20
Group III nitride semiconductor and a manufacturing method thereof App 20090057835 - Yao; Takafumi ; et al.	2009-03-05
Notched compound semiconductor wafer Grant 7,256,476 - Toba , et al. August 14, 2	2007-08-14
Notched compound semiconductor wafer Grant 7,256,478 - Toba , et al. August 14, 2	2007-08-14
Notched compound semiconductor wafer Grant 7,256,477 - Toba , et al. August 14, 2	2007-08-14
Notched compound semiconductor wafer App 20060113558 - Toba; Ryuichi ; et al.	2006-06-01
Notched compound semiconductor wafer App 20060113559 - Toba; Ryuichi ; et al.	2006-06-01
Notched compound semiconductor wafer App 20060060883 - Toba; Ryuichi ; et al.	2006-03-23
Notched compound semiconductor wafer Grant 6,998,700 - Toba , et al. February 14, 2	2006-02-14
Notched compound semiconductor wafer App 20040242001 - Toba, Ryuichi ; et al.	2004-12-02
Structure of rear portion of automotive vehicle body Grant 6,450,567 - Toba , et al. September 17, 2	2002-09-17
Structure of rear portion of automotive vehicle body App 20010020795 - Toba, Ryuichi ; et al.	2001-09-13

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