| Patent | Date |
|---|
Fring Capacitor, Integrated Circuit And Manufacturing Process For The Fringe Capacitor
App 20220208755 - Tipirneni; Naveen ; et al. | 2022-06-30 |
HEMT having conduction barrier between drain fingertip and source
Grant 11,177,378 - Joh , et al. November 16, 2 | 2021-11-16 |
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
App 20210280702 - SUH; Chang Soo ; et al. | 2021-09-09 |
Normally Off Iii Nitride Transistor
App 20210242200 - Fareed; Qhalid ; et al. | 2021-08-05 |
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
Grant 11,049,960 - Suh , et al. June 29, 2 | 2021-06-29 |
Normally off III nitride transistor
Grant 11,011,515 - Fareed , et al. May 18, 2 | 2021-05-18 |
Hemt Having Conduction Barrier Between Drain Fingertip And Source
App 20200303535 - JOH; Jungwoo ; et al. | 2020-09-24 |
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
App 20200287033 - SUH; Chang Soo ; et al. | 2020-09-10 |
Group IIIA-N HEMT with a tunnel diode in the gate stack
Grant 10,707,324 - Suh , et al. | 2020-07-07 |
HEMT having conduction barrier between drain fingertip and source
Grant 10,680,093 - Joh , et al. | 2020-06-09 |
Group Iiia-n Hemt With A Tunnel Diode In The Gate Stack
App 20190319111 - SUH; CHANG SOO ; et al. | 2019-10-17 |
Group IIIA-N HEMT with a tunnel diode in the gate stack
Grant 10,381,456 - Suh , et al. A | 2019-08-13 |
Adaptive charge balanced edge termination
Grant 10,229,988 - Tipirneni , et al. | 2019-03-12 |
Group Iiia-n Hemt With A Tunnel Diode In The Gate Stack
App 20180323297 - SUH; CHANG SOO ; et al. | 2018-11-08 |
Normally Off Iii Nitride Transistor
App 20180277535 - Fareed; Qhalid ; et al. | 2018-09-27 |
Field boosted metal-oxide-semiconductor field effect transistor
Grant 10,026,835 - Tipirneni , et al. July 17, 2 | 2018-07-17 |
Hemt Having Conduction Barrier Between Drain Fingertip And Source
App 20180151713 - JOH; Jungwoo ; et al. | 2018-05-31 |
Adaptive Charge Balanced Edge Termination
App 20180114852 - Tipirneni; Naveen ; et al. | 2018-04-26 |
HEMT having conduction barrier between drain fingertip and source
Grant 9,882,041 - Joh , et al. January 30, 2 | 2018-01-30 |
Avalanche energy handling capable III-nitride transistors
Grant 9,865,722 - Pendharkar , et al. January 9, 2 | 2018-01-09 |
Adaptive charge balanced MOSFET techniques
Grant 9,853,140 - Tipirneni , et al. December 26, 2 | 2017-12-26 |
Adaptive charge balanced edge termination
Grant 9,842,911 - Tipirneni , et al. December 12, 2 | 2017-12-12 |
Isolated Iii-n Semiconductor Devices
App 20170250272 - Tipirneni; Naveen ; et al. | 2017-08-31 |
Silicon nitride process for reduction of threshold shift
Grant 9,741,557 - Dellas , et al. August 22, 2 | 2017-08-22 |
Isolated III-N semiconductor devices
Grant 9,685,545 - Tipirneni , et al. June 20, 2 | 2017-06-20 |
Isolated Iii-n Semiconductor Devices
App 20170148905 - Tipirneni; Naveen ; et al. | 2017-05-25 |
Avalanche Energy Handling Capable Iii-nitride Transistors
App 20170098702 - PENDHARKAR; Sameer ; et al. | 2017-04-06 |
Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component
Grant 9,559,093 - Pendharkar , et al. January 31, 2 | 2017-01-31 |
III-nitride device and method having a gate isolating structure
Grant 9,553,151 - Pendharkar , et al. January 24, 2 | 2017-01-24 |
Driver for normally on III-nitride transistors to get normally-off functionality
Grant 9,543,944 - Pendharkar , et al. January 10, 2 | 2017-01-10 |
Processes used in fabricating a metal-insulator-semiconductor field effect transistor
Grant 9,508,596 - Tipirneni , et al. November 29, 2 | 2016-11-29 |
Normally Off Iii-nitride Transistor
App 20160293596 - Fareed; Qhalid ; et al. | 2016-10-06 |
Driver For Normally On Iii-nitride Transistors To Get Normally-off Functionality
App 20160277021 - PENDHARKAR; Sameer ; et al. | 2016-09-22 |
Avalanche Energy Handling Capable Iii-nitride Transistors
App 20160247795 - PENDHARKAR; Sameer ; et al. | 2016-08-25 |
Layer transfer of silicon onto III-nitride material for heterogenous integration
Grant 9,396,948 - Tipirneni , et al. July 19, 2 | 2016-07-19 |
Process for forming driver for normally on III-nitride transistors to get normally-off functionality
Grant 9,379,022 - Pendharkar , et al. June 28, 2 | 2016-06-28 |
Method for forming avalanche energy handling capable III-nitride transistors
Grant 9,356,117 - Pendharkar , et al. May 31, 2 | 2016-05-31 |
Processes Used In Fabricating A Metal-insulator-semiconductor Field Effect Transistor
App 20150372077 - TIPIRNENI; Naveen ; et al. | 2015-12-24 |
Method to form stepped dielectric for field plate formation
Grant 9,196,692 - Pendharkar , et al. November 24, 2 | 2015-11-24 |
Driver For Normally On Iii-nitride Transistors To Get Normally-off Functionality
App 20150287641 - PENDHARKAR; Sameer ; et al. | 2015-10-08 |
Iii-nitride Device And Method Having A Gate Isolating Structure
App 20150270357 - PENDHARKAR; Sameer ; et al. | 2015-09-24 |
Method To Form Stepped Dielectric For Field Plate Formation
App 20150243742 - PENDHARKAR; Sameer ; et al. | 2015-08-27 |
Avalanche Energy Handling Capable Iii-nitride Transistors
App 20150221747 - PENDHARKAR; Sameer ; et al. | 2015-08-06 |
Driver for normally on III-nitride transistors to get normally-off functionality
Grant 9,093,301 - Pendharkar , et al. July 28, 2 | 2015-07-28 |
Method to form stepped dielectric for field plate formation
Grant 9,054,071 - Pendharkar , et al. June 9, 2 | 2015-06-09 |
III-nitride device and method having a gate isolating structure
Grant 9,054,027 - Pendharkar , et al. June 9, 2 | 2015-06-09 |
Avalanche energy handling capable III-nitride transistors
Grant 9,035,318 - Pendharkar , et al. May 19, 2 | 2015-05-19 |
III-nitride enhancement mode transistors with tunable and high gate-source voltage rating
Grant 8,933,461 - Pendharkar , et al. January 13, 2 | 2015-01-13 |
Bi-directional Gallium Nitride Switch With Self-managed Substrate Bias
App 20140374766 - BAHL; Sandeep R. ; et al. | 2014-12-25 |
Method To Form Stepped Dielectric For Field Plate Formation
App 20140339671 - PENDHARKAR; Sameer ; et al. | 2014-11-20 |
Avalanche Energy Handling Capable Iii-nitride Transistors
App 20140327010 - PENDHARKAR; Sameer ; et al. | 2014-11-06 |
Layer Transfer Of Silicon Onto Iii-nitride Material For Heterogenous Integration
App 20140329370 - TIPIRNENI; Naveen ; et al. | 2014-11-06 |
Iii-nitride Transistor Layout
App 20140327011 - PENDHARKAR; Sameer ; et al. | 2014-11-06 |
Driver For Normally On Iii-nitride Transistors To Get Normally-off Functionality
App 20140252367 - PENDHARKAR; Sameer ; et al. | 2014-09-11 |
Stepped dielectric for field plate formation
Grant 8,829,613 - Pendharkar , et al. September 9, 2 | 2014-09-09 |
Adaptive Charge Balanced MOSFET Techniques
App 20140183624 - Tipirneni; Naveen ; et al. | 2014-07-03 |
RESURF III-nitride HEMTs
Grant 8,759,879 - Tipirneni , et al. June 24, 2 | 2014-06-24 |
Iii-nitride Enhancement Mode Transistors With Tunable And High Gate-source Voltage Rating
App 20140042452 - PENDHARKAR; Sameer ; et al. | 2014-02-13 |
Adaptive Charge Balanced Edge Termination
App 20130320462 - Tipirneni; Naveen ; et al. | 2013-12-05 |
Group Iii-v Enhancement Mode Transistor With Thyristor Gate
App 20130062614 - Tipirneni; Naveen ; et al. | 2013-03-14 |
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
App 20130056796 - Khan; M. Asif ; et al. | 2013-03-07 |
Method to increase breakdown voltage of semiconductor devices
Grant 8,318,562 - Khan , et al. November 27, 2 | 2012-11-27 |
Field Boosted Metal-Oxide-Semiconductor Field Effect Transistor
App 20110095359 - Tipirneni; Naveen ; et al. | 2011-04-28 |
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
App 20090090984 - Khan; M. Asif ; et al. | 2009-04-09 |
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