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Patent applications and USPTO patent grants for Tinggi Technologies Private Limited.The latest application filed is for "fabrication of semiconductor devices".
Patent | Date |
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Process for sapphire substrate separation by laser Grant 8,426,292 - Yuan , et al. April 23, 2 | 2013-04-23 |
External light efficiency of light emitting diodes Grant 8,395,167 - Kang , et al. March 12, 2 | 2013-03-12 |
Localized annealing during semiconductor device fabrication Grant 8,329,556 - Yuan , et al. December 11, 2 | 2012-12-11 |
Fabrication of reflective layer on semiconductor light emitting devices Grant 8,309,377 - Yuan , et al. November 13, 2 | 2012-11-13 |
Electrical current distribution in light emitting devices Grant 8,124,994 - Yuan , et al. February 28, 2 | 2012-02-28 |
Method for fabrication of a semiconductor device Grant 8,034,643 - Kang , et al. October 11, 2 | 2011-10-11 |
Fabrication of semiconductor devices for light emission Grant 8,004,001 - Yuan , et al. August 23, 2 | 2011-08-23 |
Fabrication Of Semiconductor Devices App 20100255656 - Yuan; Shu ;   et al. | 2010-10-07 |
Localized Annealing During Semiconductor Device Fabrication App 20100047996 - Yuan; Shu ;   et al. | 2010-02-25 |
Fabrication Transistors App 20080224173 - Yuan; Shu ;   et al. | 2008-09-18 |
Fabrication of Semiconductor Devices for Light Emission App 20080210969 - Yuan; Shu ;   et al. | 2008-09-04 |
Fabrication of Conductive Metal Layer on Semiconductor Devices App 20080210970 - Kang; Xuejun ;   et al. | 2008-09-04 |
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