Thomson; Darren B.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Thomson; Darren B..The latest application filed is for "semiconductor light source and method of making".

Company Profile

0.11.9

Thomson; Darren B. - Cary NC
Thomson; Darren B. - Ellicott City MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Grant 7,378,684 - Linthicum , et al. May 27, 2	2008-05-27
Semiconductor light source and method of making Grant 7,217,947 - Clarke , et al. May 15, 2	2007-05-15
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches Grant 7,195,993 - Zheleva , et al. March 27, 2	2007-03-27
Semiconductor light source and method of making App 20060027824 - Clarke; Rowland C. ; et al.	2006-02-09
Second gallium nitride layers that extend into trenches in first gallium nitride layers Grant 6,897,483 - Zheleva , et al. May 24, 2	2005-05-24
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches App 20050009304 - Zheleva, Tsvetanka ; et al.	2005-01-13
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby App 20040029365 - Linthicum, Kevin J. ; et al.	2004-02-12
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenchers, and gallium nitride semiconductor structures fabricated thereby App 20030194828 - Zheleva, Tsvetanka ; et al.	2003-10-16
Methods of fabricating gallium nitride microelectronic layers on silicon layers Grant 6,602,764 - Linthicum , et al. August 5, 2	2003-08-05
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates App 20020179911 - Linthicum, Kevin J. ; et al.	2002-12-05
High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates Grant 6,489,221 - Gehrke , et al. December 3, 2	2002-12-03
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Grant 6,462,355 - Linthicum , et al. October 8, 2	2002-10-08
Pendeoepitaxial Methods Of Fabricating Gallium Nitride Semiconductor Layers On Silicon Carbide Substrates By Lateral Growth From Sidewalls Of Masked Posts, And Gallium Nitride Semiconductor Structures Fabricated Thereby Grant 6,376,339 - Linthicum , et al. April 23, 2	2002-04-23
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby App 20020031851 - Linthicum, Kevin J. ; et al.	2002-03-14
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby App 20010039102 - Zheleva, Tsvetanka ; et al.	2001-11-08
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby Grant 6,265,289 - Zheleva , et al. July 24, 2	2001-07-24
High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates App 20010008791 - Gehrke, Thomas ; et al.	2001-07-19
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts App 20010008299 - Linthicum, Kevin J. ; et al.	2001-07-19
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby Grant 6,255,198 - Linthicum , et al. July 3, 2	2001-07-03
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates Grant 6,177,688 - Linthicum , et al. January 23, 2	2001-01-23

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.