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Memory Cell With Read Transistors Of The Tfet And Mosfettype To Reduce Leakage Current App 20170110179 - THOMAS; Olivier ;   et al. | 2017-04-20 |
Device with SRAM memory cells including means for polarizing wells of memory cell transistors Grant 9,542,996 - Thomas , et al. January 10, 2 | 2017-01-10 |
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Device and method for writing data to a resistive memory Grant 9,449,688 - Thomas , et al. September 20, 2 | 2016-09-20 |
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Memory Device With Memory Cells Sram (static Random Access Memories) And Controlling The Polarization Of Boxes Of Transistors Of The Memory Cells App 20160078924 - THOMAS; Olivier ;   et al. | 2016-03-17 |
Device And Method For Writing Data To A Resistive Memory App 20160071588 - Harrand; Michel ;   et al. | 2016-03-10 |
Device And Method For Writing Data To A Resistive Memory App 20160071589 - Thomas; Olivier ;   et al. | 2016-03-10 |
Memoire Non Volatile A Resistance Programmable App 20160027509 - BENOIST; Thomas-Medhi ;   et al. | 2016-01-28 |
SOI integrated circuit comprising adjacent cells of different types Grant 9,190,334 - Thomas , et al. November 17, 2 | 2015-11-17 |
Circuit for reverse biasing inverters for reducing the power consumption of an SRAM memory Grant 9,099,993 - Thomas , et al. August 4, 2 | 2015-08-04 |
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Circuit For Reverse Biasing Inverters For Reducing The Power Consumption Of An Sram Memory App 20140334226 - Thomas; Olivier ;   et al. | 2014-11-13 |
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SRAM memory cell provided with transistors having a vertical multichannel structure Grant 8,502,318 - Thomas , et al. August 6, 2 | 2013-08-06 |
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Method for making asymmetric double-gate transistors Grant 8,399,316 - Vinet , et al. March 19, 2 | 2013-03-19 |
Soi Integrated Circuit Comprising Adjacent Cells Of Different Types App 20130065366 - Thomas; Olivier ;   et al. | 2013-03-14 |
Compact field effect transistor with counter-electrode and fabrication method Grant 8,368,128 - Fenouillet-Beranger , et al. February 5, 2 | 2013-02-05 |
Method for preparing particles from an emulsion in supercritical or liquid CO.sub.2 Grant 8,367,114 - Boury , et al. February 5, 2 | 2013-02-05 |
Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate Grant 8,324,057 - Vinet , et al. December 4, 2 | 2012-12-04 |
SRAM memory cell with double gate transistors provided means to improve the write margin Grant 8,320,198 - Thomas , et al. November 27, 2 | 2012-11-27 |
SRAM memory cell with four transistors provided with a counter-electrode Grant 8,314,453 - Thomas , et al. November 20, 2 | 2012-11-20 |
Method for making asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate Grant 8,232,168 - Vinet , et al. July 31, 2 | 2012-07-31 |
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Self-contained Integrated Circuit Having Transistors With Separate Threshold Voltages App 20120126333 - Thomas; Olivier ;   et al. | 2012-05-24 |
Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT Grant 8,183,630 - Batude , et al. May 22, 2 | 2012-05-22 |
Memory cell provided with dual-gate transistors, with independent asymmetric gates Grant 8,116,118 - Thomas , et al. February 14, 2 | 2012-02-14 |
Method Of Preparing Lipid Nanoparticles App 20120027825 - Benoit; Jean-Pierre ;   et al. | 2012-02-02 |
Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate Grant 8,105,906 - Vinet , et al. January 31, 2 | 2012-01-31 |
Substrate Provided With A Semi-conducting Area Associated With Two Counter-electrodes And Device Comprising One Such Substrate App 20110316055 - CORONEL; Philippe ;   et al. | 2011-12-29 |
Compact Field Effect Transistor With Counter-electrode And Fabrication Method App 20110298019 - FENOUILLET-BERANGER; Claire ;   et al. | 2011-12-08 |
Sram Memory Cell With Four Transistors Provided With A Counter-electrode App 20110291199 - THOMAS; Olivier ;   et al. | 2011-12-01 |
SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable Grant 8,013,399 - Thomas , et al. September 6, 2 | 2011-09-06 |
Integrated circuit with a power transistor gate bias controlled by the leakage current Grant 7,928,797 - Valentian , et al. April 19, 2 | 2011-04-19 |
Method For Fabricating Asymmetric Double-gate Transistors By Which Asymmetric And Symmetric Double-gate Transistors Can Be Made On The Same Substrate App 20100320541 - Vinet; Maud ;   et al. | 2010-12-23 |
Method For Making Asymmetric Double-gate Transistors By Which Asymmetric And Symmetric Double-gate Transistors Can Be Made On The Same Substrate App 20100317167 - Vinet; Maud ;   et al. | 2010-12-16 |
Sram Memory Cell With Double Gate Transistors Provided With Means To Improve The Write Margin App 20100315889 - Thomas; Olivier ;   et al. | 2010-12-16 |
Sram Memory Cell Provided With Transistors Having A Vertical Multichannel Structure App 20100264496 - Thomas; Olivier ;   et al. | 2010-10-21 |
Suspended-gate MOS transistor with non-volatile operation Grant 7,812,410 - Collonge , et al. October 12, 2 | 2010-10-12 |
SRAM memory with reference bias cell Grant 7,787,286 - Thomas August 31, 2 | 2010-08-31 |
Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation Grant 7,768,821 - Thomas , et al. August 3, 2 | 2010-08-03 |
Method For Making Asymmetric Double-gate Transistors App 20100178743 - Vinet; Maud ;   et al. | 2010-07-15 |
Integrated Circuit with a Power Transistor Gate Bias Controlled by the Leakage Current App 20100117720 - Valentian; Alexandre ;   et al. | 2010-05-13 |
Method For Fabricating Asymmetric Double-gate Transistors By Which Asymmetric And Symmetric Double-gate Transistors Can Be Made On The Same Substrate App 20100096700 - Vinet; Maud ;   et al. | 2010-04-22 |
Circuit With Transistors Integrated In Three Dimensions And Having A Dynamically Adjustable Threshold Voltage Vt App 20090294822 - Batude; Perrine ;   et al. | 2009-12-03 |
Sram Memory Cell Having Transistors Integrated At Several Levels And The Threshold Voltage Vt Of Which Is Dynamically Adjustable App 20090294861 - THOMAS; Olivier ;   et al. | 2009-12-03 |
Method and device for adapting the voltage of a MOS transistor bulk Grant 7,622,983 - Thomas , et al. November 24, 2 | 2009-11-24 |
Method For Preparing Particles From An Emulsion In Supercritical Or Liquid Co2 App 20090087491 - Boury; Frank ;   et al. | 2009-04-02 |
Memory cells in double-gate CMOS technology provided with transistors with two independent gates Grant 7,511,989 - Thomas , et al. March 31, 2 | 2009-03-31 |
Sram Memory With Reference Bias Cell App 20090080237 - Thomas; Olivier | 2009-03-26 |
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Non-volatile Sram Memory Cell Equipped With Mobile Gate Transistors And Piezoelectric Operation App 20090016095 - Thomas; Olivier ;   et al. | 2009-01-15 |
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