| Patent | Date |
|---|
Transmission line structures for III-N devices
Grant 11,450,617 - Then , et al. September 20, 2 | 2022-09-20 |
Silicide For Group Iii-nitride Devices And Methods Of Fabrication
App 20220293738 - Dasgupta; Sansaptak ; et al. | 2022-09-15 |
Epitaxial III-N nanoribbon structures for device fabrication
Grant 11,437,255 - Dasgupta , et al. September 6, 2 | 2022-09-06 |
Self aligned gate connected plates for group III-Nitride devices and methods of fabrication
Grant 11,430,873 - Hafez , et al. August 30, 2 | 2022-08-30 |
High Aspect Ratio Non-planar Capacitors Formed Via Cavity Fill
App 20220246717 - Radosavljevic; Marko ; et al. | 2022-08-04 |
Implants to enlarge Schottky diode cross-sectional area for lateral current conduction
Grant 11,404,407 - Then , et al. August 2, 2 | 2022-08-02 |
Single-mask, high-q performance metal-insulator-metal capacitor (MIMCAP)
Grant 11,398,545 - Lin , et al. July 26, 2 | 2022-07-26 |
Tri-gate architecture multi-nanowire confined transistor
Grant 11,387,329 - Then , et al. July 12, 2 | 2022-07-12 |
III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device
Grant 11,387,328 - Ramaswamy , et al. July 12, 2 | 2022-07-12 |
Silicide for group III-Nitride devices and methods of fabrication
Grant 11,387,327 - Dasgupta , et al. July 12, 2 | 2022-07-12 |
FET capacitor circuit architectures for tunable load and input matching
Grant 11,380,679 - Then , et al. July 5, 2 | 2022-07-05 |
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers
Grant 11,380,806 - Gossner , et al. July 5, 2 | 2022-07-05 |
Group III-nitride antenna diode
Grant 11,373,995 - Gossner , et al. June 28, 2 | 2022-06-28 |
Shield Structures In Microelectronic Assemblies Having Direct Bonding
App 20220199546 - Elsherbini; Adel A. ; et al. | 2022-06-23 |
Implanted substrate contact for in-process charging control
Grant 11,362,082 - Then , et al. June 14, 2 | 2022-06-14 |
High aspect ratio non-planar capacitors formed via cavity fill
Grant 11,362,172 - Radosavljevic , et al. June 14, 2 | 2022-06-14 |
Group III-nitride polarization junction diodes
Grant 11,355,652 - Then , et al. June 7, 2 | 2022-06-07 |
Tunnel Polarization Junction Iii-n Transistors
App 20220172996 - Then; Han Wui ; et al. | 2022-06-02 |
Fabrication of Schottky barrier diode using lateral epitaxial overgrowth
Grant 11,342,232 - Dasgupta , et al. May 24, 2 | 2022-05-24 |
Work function based approaches to transistor threshold voltage tuning
Grant 11,335,800 - Then , et al. May 17, 2 | 2022-05-17 |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
Grant 11,335,801 - Radosavljevic , et al. May 17, 2 | 2022-05-17 |
Integrated circuit components with substrate cavities
Grant 11,335,777 - Lin , et al. May 17, 2 | 2022-05-17 |
Transistor with polarization layer superlattice for target threshold voltage tuning
Grant 11,329,132 - Radosavljevic , et al. May 10, 2 | 2022-05-10 |
Film bulk acoustic resonator (FBAR) devices for high frequency RF filters
Grant 11,323,092 - Then , et al. May 3, 2 | 2022-05-03 |
III-V transistors with resistive gate contacts
Grant 11,302,808 - Radosavljevic , et al. April 12, 2 | 2022-04-12 |
Tunnel polarization junction III-N transistors
Grant 11,295,992 - Then , et al. April 5, 2 | 2022-04-05 |
Gallium Nitride (gan) Three-dimensional Integrated Circuit Technology
App 20220102339 - THEN; Han Wui ; et al. | 2022-03-31 |
Gallium Nitride (gan) Three-dimensional Integrated Circuit Technology
App 20220102344 - THEN; Han Wui ; et al. | 2022-03-31 |
Co-integrated Gallium Nitride (gan) And Complementary Metal Oxide Semiconductor (cmos) Integrated Circuit Technology
App 20220093790 - GLASS; Glenn A. ; et al. | 2022-03-24 |
Microelectronic Assemblies With Inductors In Direct Bonding Regions
App 20220093546 - Elsherbini; Adel A. ; et al. | 2022-03-24 |
Direct Bonding In Microelectronic Assemblies
App 20220093492 - Elsherbini; Adel A. ; et al. | 2022-03-24 |
3d Heterogeneous Integrated Crystalline Piezoelectric Bulk Acoustic Resonators
App 20220093683 - THEN; Han Wui ; et al. | 2022-03-24 |
Microelectronic Assemblies With Inductors In Direct Bonding Regions
App 20220093547 - Elsherbini; Adel A. ; et al. | 2022-03-24 |
Methods And Apparatus To Form Silicon-based Transistors On Group Iii-nitride Materials Using Aspect Ratio Trapping
App 20220077316 - Radosavljevic; Marko ; et al. | 2022-03-10 |
Group Iii-nitride Light Emitting Devices Including A Polarization Junction
App 20220077349 - Then; Han Wui ; et al. | 2022-03-10 |
Iii-n Transistors With Integrated Linearization Devices
App 20220068910 - Then; Han Wui ; et al. | 2022-03-03 |
Group Iii-nitride (iii-n) Devices With Reduced Contact Resistance And Their Methods Of Fabrication
App 20220037322 - Radosavljevic; Marko ; et al. | 2022-02-03 |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
Grant 11,233,053 - Radosavljevic , et al. January 25, 2 | 2022-01-25 |
Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping
Grant 11,222,982 - Radosavljevic , et al. January 11, 2 | 2022-01-11 |
Film bulk acoustic resonator (FBAR) devices for high frequency RF filters
Grant 11,218,133 - Dasgupta , et al. January 4, 2 | 2022-01-04 |
Transition Metal-iii-nitride Alloys For Robust High Performance Hemts
App 20210399119 - VISHWANATH; Suresh ; et al. | 2021-12-23 |
Epitaxially fabricated heterojunction bipolar transistors
Grant 11,205,717 - Dasgupta , et al. December 21, 2 | 2021-12-21 |
Gallium nitride (GaN) transistor structures on a substrate
Grant 11,195,944 - Then , et al. December 7, 2 | 2021-12-07 |
Group III-nitride light emitting devices including a polarization junction
Grant 11,183,613 - Then , et al. November 23, 2 | 2021-11-23 |
III-N epitaxial device structures on free standing silicon mesas
Grant 11,177,376 - Dasgupta , et al. November 16, 2 | 2021-11-16 |
Field-effect transistors with buried gates and methods of manufacturing the same
Grant 11,158,712 - Then , et al. October 26, 2 | 2021-10-26 |
Enhancement/depletion device pairs and methods of producing the same
Grant 11,145,648 - Dasgupta , et al. October 12, 2 | 2021-10-12 |
Field-effect transistors and methods of manufacturing the same
Grant 11,133,410 - Then , et al. September 28, 2 | 2021-09-28 |
Gate stack design for GaN e-mode transistor performance
Grant 11,114,556 - Dasgupta , et al. September 7, 2 | 2021-09-07 |
Group III-V semiconductor fuses and their methods of fabrication
Grant 11,107,764 - Then , et al. August 31, 2 | 2021-08-31 |
Group III-nitride integrated front-end circuit
Grant 11,101,380 - Then , et al. August 24, 2 | 2021-08-24 |
CMOS circuit with a group III-nitride transistor and method of providing same
Grant 11,081,483 - Rachmady , et al. August 3, 2 | 2021-08-03 |
Microelectronic Transistor Source/drain Formation Using Angled Etching
App 20210210620 - Sung; Seung Hoon ; et al. | 2021-07-08 |
Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devices
Grant 11,056,532 - Then , et al. July 6, 2 | 2021-07-06 |
Guard ring structures and their methods of fabrication
Grant 11,056,449 - Then , et al. July 6, 2 | 2021-07-06 |
Microelectronic Devices Having Air Gap Structures Integrated With Interconnect For Reduced Parasitic Capacitances
App 20210202374 - THEN; Han Wui ; et al. | 2021-07-01 |
Broadband Acoustic Wave Resonator (awr) Filters
App 20210194459 - Alavi; Hossein ; et al. | 2021-06-24 |
Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devices
Grant 11,043,627 - Then , et al. June 22, 2 | 2021-06-22 |
Laterally adjacent and diverse group III-N transistors
Grant 11,031,305 - Dasgupta , et al. June 8, 2 | 2021-06-08 |
PN diodes and connected group III-N devices and their methods of fabrication
Grant 11,031,387 - Then , et al. June 8, 2 | 2021-06-08 |
Deep Gate-All-Around Semiconductor Device having Germanium or Group III-V Active Layer
App 20210167216 - Pillarisetty; Ravi ; et al. | 2021-06-03 |
Iii-v Transistors With Resistive Gate Contacts
App 20210167200 - RADOSAVLJEVIC; Marko ; et al. | 2021-06-03 |
Microelectronic devices having vertical piezoelectric membranes for integrated RF filters
Grant 11,005,447 - Fischer , et al. May 11, 2 | 2021-05-11 |
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances
Grant 10,998,260 - Then , et al. May 4, 2 | 2021-05-04 |
Group III-N transistors including source to channel heterostructure design
Grant 10,991,817 - Dasgupta , et al. April 27, 2 | 2021-04-27 |
Capacitor Including Multilayer Dielectric Stack
App 20210118983 - THEN; HAN WUI ; et al. | 2021-04-22 |
Single-flipped resonator devices with 2DEG bottom electrode
Grant 10,979,012 - Dasgupta , et al. April 13, 2 | 2021-04-13 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 10,950,733 - Pillarisetty , et al. March 16, 2 | 2021-03-16 |
Monolithic Integration Of A Thin Film Transistor Over A Complimentary Transistor
App 20210074702 - Le; Van H. ; et al. | 2021-03-11 |
Gallium nitride NMOS on Si (111) co-integrated with a silicon PMOS
Grant 10,943,836 - Radosavljevic , et al. March 9, 2 | 2021-03-09 |
Group Iii-nitride (iii-n) Devices With Reduced Contact Resistance And Their Methods Of Fabrication
App 20210066293 - Radosavljevic; Marko ; et al. | 2021-03-04 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
Grant 10,930,500 - Dasgupta , et al. February 23, 2 | 2021-02-23 |
Graded channels for high frequency III-N transistors
Grant 10,923,584 - Then , et al. February 16, 2 | 2021-02-16 |
Group Iii-nitride Polarization Junction Diodes
App 20210005759 - Then; Han Wui ; et al. | 2021-01-07 |
Group Iii-nitride Devices On Soi Substrates Having A Compliant Layer
App 20200411678 - Radosavljevic; Marko ; et al. | 2020-12-31 |
Complementary Group Iii-nitride Transistors With Complementary Polarization Junctions
App 20200411677 - Then; Han Wui ; et al. | 2020-12-31 |
Group Iii-nitride Antenna Diode
App 20200411505 - Gossner; Harald ; et al. | 2020-12-31 |
Group Iii-nitride Light Emitting Devices Including A Polarization Junction
App 20200411722 - Then; Han Wui ; et al. | 2020-12-31 |
Group Iii-nitride Schottky Diode
App 20200411699 - Gossner; Harald ; et al. | 2020-12-31 |
Capacitor including multilayer dielectric stack
Grant 10,879,346 - Then , et al. December 29, 2 | 2020-12-29 |
Techniques for monolithic co-integration of silicon and III-N semiconductor transistors
Grant 10,879,134 - Radosavljevic , et al. December 29, 2 | 2020-12-29 |
Gate Stack Design For Gan E-mode Transistor Performance
App 20200403092 - DASGUPTA; SANSAPTAK ; et al. | 2020-12-24 |
Co-integration Of Extended-drain And Self-aligned Iii-n Transistors On A Single Die
App 20200395358 - Radosavljevic; Marko ; et al. | 2020-12-17 |
Tunable capacitors including III-N multi-2DEG and 3DEG structures for tunable RF filters
Grant 10,861,942 - Then , et al. December 8, 2 | 2020-12-08 |
Film Bulk Acoustic Resonator (fbar) Devices For High Frequency Rf Filters
App 20200382099 - Dasgupta; Sansaptak ; et al. | 2020-12-03 |
Group III-N MEMS structures on a group IV substrate
Grant 10,850,977 - Then , et al. December 1, 2 | 2020-12-01 |
Enhancement-depletion Cascode Arrangements For Enhancement Mode Iii-n Transistors
App 20200373297 - Nidhi; Nidhi ; et al. | 2020-11-26 |
Transistor Gate Trench Engineering To Decrease Capacitance And Resistance
App 20200373403 - SUNG; SEUNG HOON ; et al. | 2020-11-26 |
Iii-n Transistor Arrangements For Reducing Nonlinearity Of Off-state Capacitance
App 20200373421 - Nidhi; Nidhi ; et al. | 2020-11-26 |
High Aspect Ratio Non-planar Capacitors Formed Via Cavity Fill
App 20200373381 - Radosavljevic; Marko ; et al. | 2020-11-26 |
Methods and apparatus to form GaN-based transistors during back-end-of-the-line processing
Grant 10,847,624 - Radosavljevic , et al. November 24, 2 | 2020-11-24 |
Film bulk acoustic resonator (FBAR) RF filter having epitaxial layers
Grant 10,848,127 - Block , et al. November 24, 2 | 2020-11-24 |
Semiconductor devices, radio frequency devices and methods for forming semiconductor devices
Grant 10,840,341 - Radosavljevic , et al. November 17, 2 | 2020-11-17 |
Group Iii-v Semiconductor Fuses And Their Methods Of Fabrication
App 20200357742 - THEN; Han Wui ; et al. | 2020-11-12 |
Epitaxial Iii-n Nanoribbon Structures For Device Fabrication
App 20200350184 - Dasgupta; Sansaptak ; et al. | 2020-11-05 |
Schemes For Reducing Off-state Capacitance In Iii-n Transistor Arrangements
App 20200335592 - Ramaswamy; Rahul ; et al. | 2020-10-22 |
Charge-induced Threshold Voltage Tuning In Iii-n Transistors
App 20200335590 - Nidhi; Nidhi ; et al. | 2020-10-22 |
Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material
App 20200335526 - Nidhi; Nidhi ; et al. | 2020-10-22 |
InN tunnel junction contacts for P-channel GaN
Grant 10,811,501 - Radosavljevic , et al. October 20, 2 | 2020-10-20 |
Stacked group III-nitride transistors for an RF switch and methods of fabrication
Grant 10,811,526 - Then , et al. October 20, 2 | 2020-10-20 |
Gate stack design for GaN e-mode transistor performance
Grant 10,804,386 - Dasgupta , et al. October 13, 2 | 2020-10-13 |
Group III-N material conductive shield for high frequency metal interconnects
Grant 10,804,214 - Then , et al. October 13, 2 | 2020-10-13 |
Film bulk acoustic resonator (FBAR) devices for high frequency RF filters
Grant 10,804,879 - Dasgupta , et al. October 13, 2 | 2020-10-13 |
Geometric manipulation of 2DEG region in source/drain extension of GaN transistor
Grant 10,804,359 - Radosavljevic , et al. October 13, 2 | 2020-10-13 |
Ferroelectric-based Field-effect Transistor With Threshold Voltage Switching For Enhanced On-state And Off-state Performance
App 20200321445 - THEN; HAN WUI ; et al. | 2020-10-08 |
Field-effect Transistors With Buried Gates And Methods Of Manufacturing The Same
App 20200312970 - Then; Han Wui ; et al. | 2020-10-01 |
Field-effect Transistors And Methods Of Manufacturing The Same
App 20200312991 - Then; Han Wui ; et al. | 2020-10-01 |
Iii-n Transistors Integrated With Thin-film Transistors Having Graded Dopant Concentrations And/or Composite Gate Dielectrics
App 20200312961 - Then; Han Wui ; et al. | 2020-10-01 |
Film Bulk Acoustic Resonator (fbar) Devices For High Frequency Rf Filters
App 20200313649 - THEN; HAN WUI ; et al. | 2020-10-01 |
Techniques for integrating three-dimensional islands for radio frequency (RF) circuits
Grant 10,790,332 - Block , et al. September 29, 2 | 2020-09-29 |
Integration Of Passive Components In Iii-n Devices
App 20200303371 - Nidhi; Nidhi ; et al. | 2020-09-24 |
Transistor gate trench engineering to decrease capacitance and resistance
Grant 10,784,360 - Sung , et al. Sept | 2020-09-22 |
Transmission line structures for III-N devices
App 20200294932 - Then; Han Wui ; et al. | 2020-09-17 |
III-N transistors with local stressors for threshold voltage control
App 20200295172 - Dasgupta; Sansaptak ; et al. | 2020-09-17 |
Epitaxially Fabricated Heterojunction Bipolar Transistors
App 20200295166 - DASGUPTA; SANSAPTAK ; et al. | 2020-09-17 |
Gallium nitride transistors for high-voltage radio frequency switches
Grant 10,777,672 - Then , et al. Sept | 2020-09-15 |
Layered spacer formation for ultrashort channel lengths and staggered field plates
Grant 10,777,671 - Then , et al. Sept | 2020-09-15 |
Gallium Nitride Nmos On Si (111) Co-integrated With A Silicon Pmos
App 20200286789 - Radosavljevic; Marko ; et al. | 2020-09-10 |
Vertical group III-N devices and their methods of fabrication
Grant 10,770,575 - Dasgupta , et al. Sep | 2020-09-08 |
P-I-N diode and connected group III-N device and their methods of fabrication
Grant 10,770,551 - Then , et al. Sep | 2020-09-08 |
Transistors Including First And Second Semiconductor Materials Between Source And Drain Regions And Methods Of Manufacturing The
App 20200279939 - Dasgupta; Sansaptak ; et al. | 2020-09-03 |
Planar Transistors With Wrap-around Gates And Wrap-around Source And Drain Contacts
App 20200279932 - Nidhi; Nidhi ; et al. | 2020-09-03 |
Multi-layer silicon/gallium nitride semiconductor
Grant 10,763,248 - Dasgupta , et al. Sep | 2020-09-01 |
Transistor connected diodes and connected III-N devices and their methods of fabrication
Grant 10,763,350 - Then , et al. Sep | 2020-09-01 |
Integration of III-N transistors and semiconductor layer transfer
App 20200273751 - Dasgupta; Sansaptak ; et al. | 2020-08-27 |
Integration Of Iii-n Transistors And Non-iii-n Transistors By Semiconductor Regrowth
App 20200273860 - Dasgupta; Sansaptak ; et al. | 2020-08-27 |
N-channel gallium nitride transistors
Grant 10,756,183 - Then , et al. A | 2020-08-25 |
Logic Circuit With Indium Nitride Quantum Well
App 20200266190 - Radosavljevic; Marko ; et al. | 2020-08-20 |
Transistors With Backside Field Plate Structures
App 20200266291 - Rode; Johann Christian ; et al. | 2020-08-20 |
Gate Structures Resistant To Voltage Breakdown
App 20200266278 - RADOSAVLJEVIC; Marko ; et al. | 2020-08-20 |
Cmos Circuit With A Group Iii-nitride Transistor And Method Of Providing Same
App 20200258884 - A1 | 2020-08-13 |
Substrate-gated Group Iii-v Transistors And Associated Fabrication Methods
App 20200251522 - Kind Code | 2020-08-06 |
Selectively regrown top contact for vertical semiconductor devices
Grant 10,727,339 - Chu-Kung , et al. | 2020-07-28 |
3D NAND structures including group III-N material channels
Grant 10,727,241 - Dasgupta , et al. | 2020-07-28 |
Gallium Nitride Transistors With Multiple Threshold Voltages And Their Methods Of Fabrication
App 20200235216 - THEN; Han Wui ; et al. | 2020-07-23 |
Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performance
Grant 10,720,505 - Then , et al. | 2020-07-21 |
Multi-layer Silicon/gallium Nitride Semiconductor
App 20200227396 - DASGUPTA; Sansaptak W. ; et al. | 2020-07-16 |
Gallium Nitride Transistors With Source And Drain Field Plates And Their Methods Of Fabrication
App 20200227545 - THEN; Han Wui ; et al. | 2020-07-16 |
Gallium Nitride Transistors With Drain Field Plates And Their Methods Of Fabrication
App 20200227544 - THEN; Han Wui ; et al. | 2020-07-16 |
Filter-centric Iii-n Films Enabling Rf Filter Integration With Iii-n Transistors
App 20200227470 - Then; Han Wui ; et al. | 2020-07-16 |
Iii-n Transistors Integrated With Resonators Of Radio Frequency Filters
App 20200227469 - Then; Han Wui ; et al. | 2020-07-16 |
Integration Of Iii-n Transistors And Polysilicon Resistors
App 20200227407 - Radosavljevic; Marko ; et al. | 2020-07-16 |
Side-by-side Integration Of Iii-n Transistors And Thin-film Transistors
App 20200219878 - Then; Han Wui ; et al. | 2020-07-09 |
Group Iii-nitride (iii-n) Devices With Reduced Contact Resistance And Their Methods Of Fabrication
App 20200220004 - Radosavljevic; Marko ; et al. | 2020-07-09 |
Variable Capacitance Device With Multiple Two-dimensional Electron Gas (2deg) Layers
App 20200220030 - Gossner; Harald ; et al. | 2020-07-09 |
Transistors With Ion- Or Fixed Charge-based Field Plate Structures
App 20200219986 - Then; Han Wui ; et al. | 2020-07-09 |
STACKED INTEGRATION OF lll-N TRANSISTORS AND THIN-FILM TRANSISTORS
App 20200219877 - Then; Han Wui ; et al. | 2020-07-09 |
Maskless Process For Fabricating Gate Structures And Schottky Diodes
App 20200219772 - RAMASWAMY; RAHUL ; et al. | 2020-07-09 |
Gallium nitride NMOS on Si (111) co-integrated with a silicon PMOS
Grant 10,707,136 - Radosavljevic , et al. | 2020-07-07 |
Group Iii-nitride Devices With Improved Rf Performance And Their Methods Of Fabrication
App 20200212211 - Radosavljevic; Marko ; et al. | 2020-07-02 |
High Breakdown Voltage Structure For High Performance Gan-based Hemt And Mos Devices To Enable Gan C-mos
App 20200211842 - GLASS; Glenn ; et al. | 2020-07-02 |
Film bulk acoustic resonator (FBAR) devices for high frequency RF filters
Grant 10,700,665 - Then , et al. | 2020-06-30 |
Tunable Capacitors Including Iii-n Multi-2deg And 3deg Structures For Tunable Rf Filters
App 20200203488 - THEN; Han Wui ; et al. | 2020-06-25 |
Superlattice Finfet With Tunable Drive Current Capability
App 20200203484 - NIDHI; Nidhi ; et al. | 2020-06-25 |
GaN devices on engineered silicon substrates
Grant 10,692,839 - Dasgupta , et al. | 2020-06-23 |
High Conductivity Source And Drain Structure For Hemt Devices
App 20200194551 - GLASS; Glenn ; et al. | 2020-06-18 |
Multi-step Lateral Epitaxial Overgrowth For Low Defect Density Iii-n Films
App 20200194549 - Dasgupta; Sansaptak ; et al. | 2020-06-18 |
Tunnel Polarization Junction Iii-n Transistors
App 20200194312 - Then; Han Wui ; et al. | 2020-06-18 |
Cap Layer On A Polarization Layer To Preserve Channel Sheet Resistance
App 20200194552 - DASGUPTA; Sansaptak ; et al. | 2020-06-18 |
E-d Mode 2deg Fet With Gate Spacer To Locally Tune Vt And Improve Breakdown
App 20200194575 - RAMASWAMY; Rahul ; et al. | 2020-06-18 |
Gan Based Hemt Device Relaxed Buffer Structure On Silicon
App 20200194577 - GLASS; Glenn ; et al. | 2020-06-18 |
Antenna Gate Field Plate On 2deg Planar Fet
App 20200194578 - RAMASWAMY; Rahul ; et al. | 2020-06-18 |
Transistor Gate Structure With Hybrid Stacks Of Dielectric Material
App 20200176582 - Rode; Johann C. ; et al. | 2020-06-04 |
Schottky diodes on semipolar planes of group III-N material structures
Grant 10,672,884 - Dasgupta , et al. | 2020-06-02 |
Film bulk acoustic resonator (FBAR) devices with 2DEG bottom electrode
Grant 10,673,405 - Dasgupta , et al. | 2020-06-02 |
Iii-n Nanostructures Formed Via Cavity Fill
App 20200168708 - Radosavljevic; Marko ; et al. | 2020-05-28 |
Techniques for co-integrating transition metal dichalcogenide (TMDC)-based and III-N semiconductor-based transistor devices
Grant 10,665,707 - Then , et al. | 2020-05-26 |
Co-integrated III-N voltage regulator and RF power amplifier for envelope tracking systems
Grant 10,665,577 - Then , et al. | 2020-05-26 |
Semiconductor devices with raised doped crystalline structures
Grant 10,665,708 - Radosavljevic , et al. | 2020-05-26 |
Transistors with vertically opposed source and drain metal interconnect layers
Grant 10,658,475 - Then , et al. | 2020-05-19 |
Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers
Grant 10,658,471 - Dasgupta , et al. | 2020-05-19 |
Semiconductor devices having ruthenium phosphorus thin films
Grant 10,658,487 - Clendenning , et al. | 2020-05-19 |
Vertical III-N transistors with lateral overgrowth over a protruding III-N semiconductor structure
Grant 10,658,502 - Dasgupta , et al. | 2020-05-19 |
Inductor/core Assemblies For Integrated Circuits
App 20200152855 - Lin; Kevin L. ; et al. | 2020-05-14 |
Integrated Circuit Components With Substrate Cavities
App 20200144369 - Lin; Kevin L. ; et al. | 2020-05-07 |
Semiconductor devices, radio frequency devices and methods for forming semiconductor devices
App 20200135865 - Radosavljevic; Marko ; et al. | 2020-04-30 |
Graded Channels For High Frequency Iii-n Transistors
App 20200119175 - THEN; HAN WUI ; et al. | 2020-04-16 |
Techniques For Monolithic Co-integration Of Polycrystalline Thin-film Bulk Acoustic Resonator Devices And Monocrystalline Iii-n
App 20200119087 - THEN; HAN WUI ; et al. | 2020-04-16 |
3d Nand Structures Including Group Iii-n Material Channels
App 20200119030 - DASGUPTA; SANSAPTAK ; et al. | 2020-04-16 |
Group Iii-n Transistors Including Source To Channel Heterostructure Design
App 20200119176 - DASGUPTA; SANSAPTAK ; et al. | 2020-04-16 |
Capacitor Including Multilayer Dielectric Stack
App 20200119138 - THEN; HAN WUI ; et al. | 2020-04-16 |
Techniques For Monolithic Co-integration Of Thin-film Bulk Acoustic Resonator Devices And Iii-n Semiconductor Transistor Devices
App 20200119255 - THEN; HAN WUI ; et al. | 2020-04-16 |
Transistors including retracted raised source/drain to reduce parasitic capacitances
Grant 10,622,448 - Then , et al. | 2020-04-14 |
Reduced punchthrough breakdown in gallium-nitride transistors
Grant 10,615,280 - Armstrong , et al. | 2020-04-07 |
Silicide For Group Iii-nitride Devices And Methods Of Fabrication
App 20200105880 - Dasgupta; Sansaptak ; et al. | 2020-04-02 |
Group Iii-nitride (iii-n) Devices And Methods Of Fabrication
App 20200105744 - Dasgupta; Sansaptak ; et al. | 2020-04-02 |
Iii-n Tunnel Device Architectures & High Frequency Mixers Employing A Iii-n Tunnel Device
App 20200105881 - Ramaswamy; Rahul ; et al. | 2020-04-02 |
Self Aligned Gate Connected Plates For Group Iii-nitride Devices And Methods Of Fabrication
App 20200105884 - Hafez; Walid ; et al. | 2020-04-02 |
Tri-gate Architecture Multi-nanowire Confined Transistor
App 20200105882 - THEN; Han Wui ; et al. | 2020-04-02 |
Integrated Programmable Gate Radio Frequency (rf) Switch
App 20200098885 - THEN; Han Wui ; et al. | 2020-03-26 |
Fet Capacitor Circuit Architectures For Tunable Load And Input Matching
App 20200098746 - Then; Han Wui ; et al. | 2020-03-26 |
Silicon PMOS with gallium nitride NMOS for voltage regulation
Grant 10,600,787 - Dasgupta , et al. | 2020-03-24 |
Iii-n Metal-insulator-semiconductor Field Effect Transistors With Multiple Gate Dielectric Materials
App 20200091285 - Hafez; Walid ; et al. | 2020-03-19 |
Iii-n Transistors With Polarization Modulation
App 20200083360 - Hafez; Walid ; et al. | 2020-03-12 |
Stressors for compressively strained GaN p-channel
Grant 10,586,866 - Dasgupta , et al. | 2020-03-10 |
Wide band gap transistors on non-native semiconductor substrates
Grant 10,580,895 - Then , et al. | 2020-03-03 |
Gallium Nitride Transistor With Underfill Aluminum Nitride For Improved Thermal And Rf Performance
App 20200066848 - THEN; Han Wui ; et al. | 2020-02-27 |
P-i-n Diode And Connected Group Iii-n Device And Their Methods Of Fabrication
App 20200066849 - THEN; Han Wui ; et al. | 2020-02-27 |
Layered Spacer Formation For Ultrashort Channel Lengths And Staggered Field Plates
App 20200066889 - THEN; Han Wui ; et al. | 2020-02-27 |
Transistor Connected Diodes And Connected Iii-n Devices And Their Methods Of Fabrication
App 20200066890 - THEN; Han Wui ; et al. | 2020-02-27 |
Vertical Group Iii-n Devices And Their Methods Of Fabrication
App 20200066893 - DASGUPTA; Sansaptak ; et al. | 2020-02-27 |
CMOS circuits using n-channel and p-channel gallium nitride transistors
Grant 10,573,647 - Then , et al. Feb | 2020-02-25 |
Envelope-tracking control techniques for highly-efficient RF power amplifiers
Grant 10,574,187 - Then , et al. Feb | 2020-02-25 |
Stacked Group Iii-nitride Transistors For An Rf Switch And Methods Of Fabrication
App 20200058782 - THEN; Han Wui ; et al. | 2020-02-20 |
Enhancement/depletion Device Pairs And Methods Of Producing The Same
App 20200043917 - Dasgupta; Sansaptak ; et al. | 2020-02-06 |
Multiple stacked field-plated GaN transistor and interlayer dielectrics to improve breakdown voltage and reduce parasitic capacitances
Grant 10,553,689 - Then , et al. Fe | 2020-02-04 |
Self-aligned transistor structures enabling ultra-short channel lengths
Grant 10,546,927 - Then , et al. Ja | 2020-01-28 |
Group III-N nanowire transistors
Grant 10,541,305 - Then , et al. Ja | 2020-01-21 |
Nanoribbon structures with recessed source-drain epitaxy
Grant 10,535,777 - Radosavljevic , et al. Ja | 2020-01-14 |
Schottky Diode Structures And Integration With Iii-v Transistors
App 20200006322 - THEN; Han Wui ; et al. | 2020-01-02 |
Implants To Enlarge Schottky Diode Cross-sectional Area For Lateral Current Conduction
App 20190393210 - THEN; Han Wui ; et al. | 2019-12-26 |
Fabrication Of Schottky Barrier Diode Using Lateral Epitaxial Overgrowth
App 20190393092 - DASGUPTA; Sansaptak ; et al. | 2019-12-26 |
Methods Of Transistor Gate Structuring Using Single Operation Dummy Gate Removal
App 20190393041 - RADOSAVLJEVIC; Marko ; et al. | 2019-12-26 |
Single-mask, High-q Performance Metal-insulator-metal Capacitor (mimcap)
App 20190393298 - LIN; Kevin ; et al. | 2019-12-26 |
Implanted Substrate Contact For In-process Charging Control
App 20190393211 - THEN; Han Wui ; et al. | 2019-12-26 |
Transistor With Polarization Layer Superlattice For Target Threshold Voltage Tuning
App 20190393311 - RADOSAVLJEVIC; Marko ; et al. | 2019-12-26 |
Transistor Gate Shape Structuring Approaches
App 20190393319 - RADOSAVLJEVIC; Marko ; et al. | 2019-12-26 |
Work Function Based Approaches To Transistor Threshold Voltage Tuning
App 20190393332 - THEN; Han Wui ; et al. | 2019-12-26 |
Contact Shape Engineering For Improved Performance In Gan Rf Transistors
App 20190378899 - RADOSAVLJEVIC; Marko ; et al. | 2019-12-12 |
Guard Ring Structures And Their Methods Of Fabrication
App 20190371743 - THEN; Han Wui ; et al. | 2019-12-05 |
Cmos Compatible Isolation Leakage Improvements In Gallium Nitride Transistors
App 20190371886 - RADOSAVLJEVIC; Marko ; et al. | 2019-12-05 |
Gallium nitride voltage regulator
Grant 10,497,785 - Dasgupta , et al. De | 2019-12-03 |
Group Iii-nitride Integrated Front-end Circuit
App 20190355843 - THEN; Han Wui ; et al. | 2019-11-21 |
Integration of III-V devices on Si wafers
Grant 10,475,888 - Dasgupta , et al. Nov | 2019-11-12 |
Acoustic Resonator Structure
App 20190341899 - FISCHER; Paul ; et al. | 2019-11-07 |
Methods and devices integrating III-N transistor circuitry with Si transistor circuitry
Grant 10,453,679 - Dasgupta , et al. Oc | 2019-10-22 |
Light-emitting Diode (led) And Micro Led Substrates And Methods For Making The Same
App 20190305182 - Dasgupta; Sansaptak ; et al. | 2019-10-03 |
Microelectronic Devices Having Air Gap Structures Integrated With Interconnect For Reduced Parasitic Capacitances
App 20190304896 - THEN; Han Wui ; et al. | 2019-10-03 |
Nanoribbon Structures With Recessed Source-drain Epitaxy
App 20190305135 - Radosavljevic; Marko ; et al. | 2019-10-03 |
Light-emitting diode (LED) and micro LED substrates and methods for making the same
Grant 10,431,717 - Dasgupta , et al. O | 2019-10-01 |
Wurtzite Heteroepitaxial Structures With Inclined Sidewall Facets For Defect Propagation Control In Silicon Cmos-compatible Semi
App 20190287789 - Dasgupta; Sansaptak ; et al. | 2019-09-19 |
Laterally Adjacent And Diverse Group Iii-n Transistors
App 20190287858 - Dasgupta; Sansaptak ; et al. | 2019-09-19 |
Ultra Low Loss Microelectronic Devices Having Insulating Substrates With Optional Air Cavity Structures
App 20190287935 - FISCHER; Paul B. ; et al. | 2019-09-19 |
Techniques For Monolithic Co-integration Of Silicon And Iii-n Semiconductor Transistors
App 20190279908 - RADOSAVLJEVIC; MARKO ; et al. | 2019-09-12 |
Integrated RF frontend structures
Grant 10,411,067 - Then , et al. Sept | 2019-09-10 |
Surface Acoustic Wave Resonator Structure
App 20190259806 - FISCHER; Paul ; et al. | 2019-08-22 |
Microelectronic Devices Having Vertical Piezoelectric Membranes For Integrated Rf Filters
App 20190260342 - FISCHER; Paul B. ; et al. | 2019-08-22 |
Heteroepitaxial structures with high temperature stable substrate interface material
Grant 10,388,777 - Dasgupta , et al. A | 2019-08-20 |
Semiconductor Devices Having Ruthenium Phosphorus Thin Films
App 20190252511 - CLENDENNING; Scott B. ; et al. | 2019-08-15 |
Group Iii-n Transistors For System On Chip (soc) Architecture Integrating Power Management And Radio Frequency Circuits
App 20190244936 - THEN; Han Wui ; et al. | 2019-08-08 |
Fbar Devices Having Multiple Epitaxial Layers Stacked On A Same Substrate
App 20190229705 - DASGUPTA; SANSAPTAK ; et al. | 2019-07-25 |
Gate Stack Design For Gan E-mode Transistor Performance
App 20190221660 - DASGUPTA; SANSAPTAK ; et al. | 2019-07-18 |
Geometric Manipulation Of 2deg Region In Source/drain Extension Of Gan Transistor
App 20190214464 - RADOSAVLJEVIC; MARKO ; et al. | 2019-07-11 |
Rf Filters And Resonators Of Crystalline Iii-n Films
App 20190214965 - Dasgupta; Sansaptak ; et al. | 2019-07-11 |
Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same
Grant 10,347,544 - Dasgupta , et al. July 9, 2 | 2019-07-09 |
InN TUNNEL JUNCTION CONTACTS FOR P-CHANNEL GaN
App 20190207003 - RADOSAVLJEVIC; Marko ; et al. | 2019-07-04 |
Transistors With Vertically Opposed Source And Drain Metal Interconnect Layers
App 20190198627 - THEN; HAN WUI ; et al. | 2019-06-27 |
Single-flipped Resonator Devices With 2deg Bottom Electrode
App 20190199312 - Dasgupta; Sansaptak ; et al. | 2019-06-27 |
Film Bulk Acoustic Resonator (fbar) Devices With 2deg Bottom Electrode
App 20190199322 - Dasgupta; Sansaptak ; et al. | 2019-06-27 |
Transistors with heteroepitaxial III-N source/drain
Grant 10,332,998 - Dasgupta , et al. | 2019-06-25 |
Pn Diodes And Connected Group Iii-n Devices And Their Methods Of Fabrication
App 20190189611 - THEN; Han Wui ; et al. | 2019-06-20 |
Techniques For Forming Schottky Diodes On Semipolar Planes Of Group Iii-n Material Structures
App 20190189771 - DASGUPTA; SANSAPTAK ; et al. | 2019-06-20 |
Film Bulk Acoustic Resonator (fbar) Devices For High Frequency Rf Filters
App 20190190489 - Dasgupta; Sansaptak ; et al. | 2019-06-20 |
Film Bulk Acoustic Resonator (fbar) Devices For High Frequency Rf Filters
App 20190190488 - Dasgupta; Sansaptak ; et al. | 2019-06-20 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
Grant 10,325,774 - Dasgupta , et al. | 2019-06-18 |
Methods And Apparatus To Form Silicon-based Transistors On Group Iii-nitride Materials Using Aspect Ratio Trapping
App 20190181265 - Radosavljevic; Marko ; et al. | 2019-06-13 |
Group Iii-n Material Conductive Shield For High Frequency Metal Interconnects
App 20190181099 - THEN; Han Wui ; et al. | 2019-06-13 |
METHODS AND APPARATUS TO FORM GaN-BASED TRANSISTORS DURING BACK-END-OF-THE-LINE PROCESSING
App 20190181231 - Radosavljevic; Marko ; et al. | 2019-06-13 |
Iii-n Epitaxial Device Structures On Free Standing Silicon Mesas
App 20190172938 - DASGUPTA; Sansaptak ; et al. | 2019-06-06 |
Film Bulk Acoustic Resonator (fbar) Rf Filter Having Epitaxial Layers
App 20190173452 - BLOCK; BRUCE A. ; et al. | 2019-06-06 |
Group Iii-n Nanowire Transistors
App 20190165106 - THEN; Han Wui ; et al. | 2019-05-30 |
Semiconductor Devices With Raised Doped Crystalline Structures
App 20190148533 - RADOSAVLJEVIC; Marko ; et al. | 2019-05-16 |
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits
Grant 10,290,614 - Then , et al. | 2019-05-14 |
High voltage field effect transistors
Grant 10,263,074 - Then , et al. | 2019-04-16 |
Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas
Grant 10,243,069 - Then , et al. | 2019-03-26 |
Transistor Gate Trench Engineering To Decrease Capacitance And Resistance
App 20190088759 - SUNG; SEUNG HOON ; et al. | 2019-03-21 |
Reduced Punchthrough Breakdown In Gallium-nitride Transistors
App 20190088773 - Armstrong; Mark ; et al. | 2019-03-21 |
III-N epitaxial device structures on free standing silicon mesas
Grant 10,229,991 - Dasgupta , et al. | 2019-03-12 |
Gallium Nitride Transistors For High-voltage Radio Frequency Switches
App 20190074368 - Then; Han Wui ; et al. | 2019-03-07 |
Wafer Edge Protection For Crack-free Material Growth
App 20190067081 - GARDNER; Sanaz K. ; et al. | 2019-02-28 |
Integrated circuit die having reduced defect group III-nitride structures and methods associated therewith
Grant 10,217,673 - Dasgupta , et al. Feb | 2019-02-26 |
Transistors Including Retracted Raised Source/drain To Reduce Parasitic Capacitances
App 20190058042 - THEN; HAN WUI ; et al. | 2019-02-21 |
Gallium Nitride Voltage Regulator
App 20190058041 - Dasgupta; Sansaptak ; et al. | 2019-02-21 |
Ferroelectric-based Field-effect Transistor With Threshold Voltage Switching For Enhanced On-state And Off-state Performance
App 20190058049 - THEN; HAN WUI ; et al. | 2019-02-21 |
Semiconductor devices with raised doped crystalline structures
Grant 10,211,327 - Radosavljevic , et al. Feb | 2019-02-19 |
Silicon Pmos With Gallium Nitride Nmos For Voltage Regulation
App 20190051650 - Dasgupta; Sansaptak ; et al. | 2019-02-14 |
Gallium Nitride Nmos On Si (111) Co-integrated With A Silicon Pmos
App 20190051562 - Radosavljevic; Marko ; et al. | 2019-02-14 |
Method of fabricating semiconductor structures on dissimilar substrates
Grant 10,204,989 - Chu-Kung , et al. Feb | 2019-02-12 |
Group III-N nanowire transistors
Grant 10,186,581 - Then , et al. Ja | 2019-01-22 |
Methods And Devices Integrating Iii-n Transistor Circuitry With Si Transistor Circuitry
App 20190006171 - Dasgupta; Sansaptak ; et al. | 2019-01-03 |
Epitaxial buffer layers for group III-N transistors on silicon substrates
Grant 10,170,612 - Dasgupta , et al. J | 2019-01-01 |
Techniques For Integrating Three-dimensional Islands For Radio Frequency (rf) Circuits
App 20180358406 - BLOCK; Bruce A. ; et al. | 2018-12-13 |
N-channel Gallium Nitride Transistors
App 20180350911 - Then; Han Wui ; et al. | 2018-12-06 |
Transistors With Heteroepitaxial Iii-n Source/drain
App 20180350985 - DASGUPTA; Sansaptak ; et al. | 2018-12-06 |
Transition Metal Dichalcogenides (tmdcs) Over Iii-nitride Heteroepitaxial Layers
App 20180350921 - DASGUPTA; Sansaptak ; et al. | 2018-12-06 |
Envelope-tracking Control Techniques For Highly-efficient Rf Power Amplifiers
App 20180342985 - THEN; HAN WUI ; et al. | 2018-11-29 |
High breakdown voltage III-N depletion mode MOS capacitors
Grant 10,134,727 - Then , et al. November 20, 2 | 2018-11-20 |
Wide Band Gap Transistors On Non-native Semiconductor Substrates And Methods Of Manufacture Thereof
App 20180331224 - Then; Han Wui ; et al. | 2018-11-15 |
Stressors For Compressively Strained Gan P-channel
App 20180331222 - DASGUPTA; SANSAPTAK ; et al. | 2018-11-15 |
Self-aligned Transistor Structures Enabling Ultra-short Channel Lengths
App 20180331182 - THEN; HAN WUI ; et al. | 2018-11-15 |
Co-integrated Iii-n Voltage Regulator And Rf Power Amplifier For Envelope Tracking Systems
App 20180331082 - THEN; HAN WUI ; et al. | 2018-11-15 |
Multiple Stacked Field-plated Gan Transistor And Interlayer Dielectrics To Improve Breakdown Voltage And Reduce Parasitic Capacitances
App 20180331191 - THEN; Han Wui ; et al. | 2018-11-15 |
Integrated Rf Frontend Structures
App 20180331156 - THEN; HAN WUI ; et al. | 2018-11-15 |
Co-planar P-channel And N-channel Gallium Nitride-based Transistors On Silicon And Techniques For Forming Same
App 20180323106 - DASGUPTA; SANSAPTAK ; et al. | 2018-11-08 |
Film Bulk Acoustic Resonator (fbar) Devices For High Frequency Rf Filters
App 20180323767 - THEN; HAN WUI ; et al. | 2018-11-08 |
Vertical Iii-n Transistors With Lateral Epitaxial Overgrowth
App 20180323298 - DASGUPTA; Sansaptak ; et al. | 2018-11-08 |
Integrated Circuit Die Having Reduced Defect Group Iii-nitride Structures And Methods Associated Therewith
App 20180315659 - DASGUPTA; Sansaptak ; et al. | 2018-11-01 |
Techniques For Co-integrating Transition Metal Dichalcogenide (tmdc)-based And Iii-n Semiconductor-based Transistor Devices
App 20180308965 - THEN; HAN WUI ; et al. | 2018-10-25 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer
App 20180301563 - Pillarisetty; Ravi ; et al. | 2018-10-18 |
Group III-N transistor on nanoscale template structures
Grant 10,096,683 - Then , et al. October 9, 2 | 2018-10-09 |
III-N devices in Si trenches
Grant 10,096,682 - Dasgupta , et al. October 9, 2 | 2018-10-09 |
N-channel gallium nitride transistors
Grant 10,056,456 - Then , et al. August 21, 2 | 2018-08-21 |
Multi-device flexible electronics system on a chip (SOC) process integration
Grant 10,050,015 - Pillarisetty , et al. August 14, 2 | 2018-08-14 |
Iii-n Epitaxial Device Structures On Free Standing Silicon Mesas
App 20180219087 - DASGUPTA; Sansaptak ; et al. | 2018-08-02 |
Wide band gap transistor on non-native semiconductor substrate
Grant 10,032,911 - Then , et al. July 24, 2 | 2018-07-24 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 10,026,845 - Pillarisetty , et al. July 17, 2 | 2018-07-17 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors
Grant 10,020,371 - Pillarisetty , et al. July 10, 2 | 2018-07-10 |
Semiconductor Devices With Raised Doped Crystalline Structures
App 20180190807 - RADOSAVLJEVIC; Marko ; et al. | 2018-07-05 |
Group Iii-n Mems Structures On A Group Iv Substrate
App 20180170747 - THEN; HAN WUI ; et al. | 2018-06-21 |
GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE
App 20180175184 - THEN; HAN WUI ; et al. | 2018-06-21 |
Heteroepitaxial Structures With High Temperature Stable Substrate Interface Material
App 20180145164 - DASGUPTA; Sansaptak ; et al. | 2018-05-24 |
Gan Devices On Engineered Silicon Substrates
App 20180145052 - DASGUPTA; Sansaptak ; et al. | 2018-05-24 |
Germanium tin channel transistors
Grant 9,972,686 - Pillarisetty , et al. May 15, 2 | 2018-05-15 |
High electron mobility transistor (HEMT) and method of fabrication
Grant 9,947,780 - Then , et al. April 17, 2 | 2018-04-17 |
Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith
Grant 9,922,826 - Dasgupta , et al. March 20, 2 | 2018-03-20 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
Grant 9,923,087 - Dasgupta , et al. March 20, 2 | 2018-03-20 |
N-channel Gallium Nitride Transistors
App 20180026097 - Then; Han Wui ; et al. | 2018-01-25 |
Nanoscale structure with epitaxial film having a recessed bottom portion
Grant 9,865,684 - Chu-Kung , et al. January 9, 2 | 2018-01-09 |
Selective epitaxially grown III-V materials based devices
Grant 9,853,107 - Metz , et al. December 26, 2 | 2017-12-26 |
Forming III-V device structures on (111) planes of silicon fins
Grant 9,847,432 - Dasgupta , et al. December 19, 2 | 2017-12-19 |
Forming LED structures on silicon fins
Grant 9,847,448 - Dasgupta , et al. December 19, 2 | 2017-12-19 |
Integrated Circuit Die Having Reduced Defect Group Iii-nitride Layer And Methods Associated Therewith
App 20170352532 - DASGUPTA; Sansaptak ; et al. | 2017-12-07 |
Self-aligned gate last III-N transistors
Grant 9,837,499 - Then , et al. December 5, 2 | 2017-12-05 |
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
Grant 9,818,847 - Dewey , et al. November 14, 2 | 2017-11-14 |
Group Iii-n Transistor On Nanoscale Template Structures
App 20170323946 - THEN; Han Wui ; et al. | 2017-11-09 |
Techniques and configurations for stacking transistors of an integrated circuit device
Grant 9,812,574 - Pillarisetty , et al. November 7, 2 | 2017-11-07 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 9,806,203 - Then , et al. October 31, 2 | 2017-10-31 |
Group Iii-n Nanowire Transistors
App 20170288022 - THEN; Han Wui ; et al. | 2017-10-05 |
Source/drain Regrowth For Low Contact Resistance To 2d Electron Gas In Gallium Nitride Transistor
App 20170278959 - Then; Han Wui ; et al. | 2017-09-28 |
Method Of Fabricating Semiconductor Structures On Dissimilar Substrates
App 20170271448 - CHU-KUNG; Benjamin ; et al. | 2017-09-21 |
High Voltage Field Effect Transistors
App 20170263708 - THEN; Han Wui ; et al. | 2017-09-14 |
III-N material structure for gate-recessed transistors
Grant 9,755,062 - Then , et al. September 5, 2 | 2017-09-05 |
Transition metal dichalcogenide semiconductor assemblies
Grant 9,748,371 - Radosavljevic , et al. August 29, 2 | 2017-08-29 |
Cmos Circuits Using N-channel And P-channel Gallium Nitride Transistors
App 20170243866 - Then; Han Wui ; et al. | 2017-08-24 |
Wide Band Gap Transistor On Non-native Semiconductor Substrates And Methods Of Manufacture Thereof
App 20170236936 - Then; Han Wui ; et al. | 2017-08-17 |
Group III-N transistors on nanoscale template structures
Grant 9,716,149 - Then , et al. July 25, 2 | 2017-07-25 |
Method of fabricating semiconductor structures on dissimilar substrates
Grant 9,698,222 - Chu-Kung , et al. July 4, 2 | 2017-07-04 |
Group III-N nanowire transistors
Grant 9,691,857 - Then , et al. June 27, 2 | 2017-06-27 |
High voltage field effect transistors
Grant 9,685,508 - Then , et al. June 20, 2 | 2017-06-20 |
Integration of III-V devices on Si wafers
Grant 9,673,045 - Dasgupta , et al. June 6, 2 | 2017-06-06 |
III-N transistors with enhanced breakdown voltage
Grant 9,666,708 - Then , et al. May 30, 2 | 2017-05-30 |
III-N transistors with epitaxial layers providing steep subthreshold swing
Grant 9,660,067 - Then , et al. May 23, 2 | 2017-05-23 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
Grant 9,660,085 - Then , et al. May 23, 2 | 2017-05-23 |
Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack
Grant 9,660,064 - Dasgupta , et al. May 23, 2 | 2017-05-23 |
III-N devices in Si trenches
Grant 9,640,422 - Dasgupta , et al. May 2, 2 | 2017-05-02 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 9,640,671 - Pillarisetty , et al. May 2, 2 | 2017-05-02 |
Trench confined epitaxially grown device layer(s)
Grant 9,634,007 - Pillarisetty , et al. April 25, 2 | 2017-04-25 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
Grant 9,590,069 - Dasgupta , et al. March 7, 2 | 2017-03-07 |
Epitaxial buffer layers for group III-N transistors on silicon substrates
Grant 9,583,574 - Dasgupta , et al. February 28, 2 | 2017-02-28 |
III-N material structure for gate-recessed transistors
Grant 9,530,878 - Then , et al. December 27, 2 | 2016-12-27 |
Non-planar III-N transistor
Grant 9,461,160 - Then , et al. October 4, 2 | 2016-10-04 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors
Grant 9,461,141 - Pillarisetty , et al. October 4, 2 | 2016-10-04 |
Group III-N nanowire transistors
Grant 9,397,188 - Then , et al. July 19, 2 | 2016-07-19 |
Lattice mismatched hetero-epitaxial film
Grant 9,391,181 - Chu-Kung , et al. July 12, 2 | 2016-07-12 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 9,373,693 - Then , et al. June 21, 2 | 2016-06-21 |
Group III-N transistors on nanoscale template structures
Grant 9,362,369 - Then , et al. June 7, 2 | 2016-06-07 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 9,337,291 - Pillarisetty , et al. May 10, 2 | 2016-05-10 |
High voltage field effect transistors
Grant 9,245,989 - Then , et al. January 26, 2 | 2016-01-26 |
Group III-N nanowire transistors
Grant 9,240,410 - Then , et al. January 19, 2 | 2016-01-19 |
Techniques and configuration for stacking transistors of an integrated circuit device
Grant 9,236,476 - Pillarisetty , et al. January 12, 2 | 2016-01-12 |
Group III-N transistor on nanoscale template structures
Grant 9,219,079 - Then , et al. December 22, 2 | 2015-12-22 |
III-N material structure for gate-recessed transistors
Grant 9,209,290 - Then , et al. December 8, 2 | 2015-12-08 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 9,136,343 - Pillarisetty , et al. September 15, 2 | 2015-09-15 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors
Grant 9,123,790 - Pillarisetty , et al. September 1, 2 | 2015-09-01 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
Grant 9,099,490 - Dasgupta , et al. August 4, 2 | 2015-08-04 |
High breakdown voltage III-N depletion mode MOS capacitors
Grant 9,064,709 - Then , et al. June 23, 2 | 2015-06-23 |
Epitaxial film on nanoscale structure
Grant 9,029,835 - Chu-King , et al. May 12, 2 | 2015-05-12 |
III-N material structure for gate-recessed transistors
Grant 8,987,091 - Then , et al. March 24, 2 | 2015-03-24 |
Group III-N transistors on nanoscale template structures
Grant 8,954,021 - Then , et al. February 10, 2 | 2015-02-10 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 8,896,101 - Then , et al. November 25, 2 | 2014-11-25 |
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
Grant 8,890,264 - Dewey , et al. November 18, 2 | 2014-11-18 |
Defect transferred and lattice mismatched epitaxial film
Grant 8,872,225 - Chu-Kung , et al. October 28, 2 | 2014-10-28 |
Opto-electronic oscillator and method
Grant 8,842,706 - Feng , et al. September 23, 2 | 2014-09-23 |
Non-planar semiconductor device having channel region with low band-gap cladding layer
Grant 8,785,909 - Radosavljevic , et al. July 22, 2 | 2014-07-22 |
Trench confined epitaxially grown device layer(s)
Grant 8,765,563 - Pillarisetty , et al. July 1, 2 | 2014-07-01 |
Group III-N transistors on nanoscale template structures
Grant 8,768,271 - Then , et al. July 1, 2 | 2014-07-01 |
Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
Grant 8,710,490 - Pillarisetty , et al. April 29, 2 | 2014-04-29 |
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