TERASHIMA; Tomohide
Patent Applications and Registrations
Patent applications and USPTO patent grants for TERASHIMA; Tomohide.The latest application filed is for "semiconductor device".
Company Profile
1.63.39
- TERASHIMA; Tomohide - Tokyo JP
- Terashima; Tomohide - Chiyoda-ku JP
- Terashima; Tomohide - Hyogo JP
- Terashima; Tomohide - Fukuoka JP
- Terashima; Tomohide - Itami JP
Patent Activity
| Patent | Date |
|---|---|
| Semiconductor Device App 20220246603 - TANAKA; Sho ; et al. | 2022-08-04 |
| Semiconductor device and method of manufacturing same Grant 11,217,449 - Terashima , et al. January 4, 2 | 2022-01-04 |
| Semiconductor device and method of manufacturing same Grant 11,183,386 - Terashima , et al. November 23, 2 | 2021-11-23 |
| Semiconductor Device App 20200335496 - TERASHIMA; Tomohide | 2020-10-22 |
| Semiconductor Device And Method Of Manufacturing Same App 20200203166 - TERASHIMA; Tomohide ; et al. | 2020-06-25 |
| Semiconductor device manufacturing method and semiconductor manufacturing apparatus Grant 9,159,563 - Terashima , et al. October 13, 2 | 2015-10-13 |
| Semiconductor Device Manufacturing Method And Semiconductor Manufacturing Apparatus App 20150228488 - Terashima; Tomohide ; et al. | 2015-08-13 |
| Semiconductor device Grant 9,048,111 - Yamashita , et al. June 2, 2 | 2015-06-02 |
| Semiconductor Device App 20150008557 - YAMASHITA; Junichi ; et al. | 2015-01-08 |
| Semiconductor device Grant 8,878,239 - Terashima November 4, 2 | 2014-11-04 |
| Semiconductor device with reduced potential between adjacent floating regions Grant 8,772,903 - Terashima July 8, 2 | 2014-07-08 |
| Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region Grant 8,710,617 - Yamashita , et al. April 29, 2 | 2014-04-29 |
| Semiconductor device supplying charging current to element to be charged Grant 8,674,471 - Terashima March 18, 2 | 2014-03-18 |
| Semiconductor Device App 20140015004 - TERASHIMA; Tomohide | 2014-01-16 |
| Semiconductor Device App 20130292740 - YAMASHITA; Junichi ; et al. | 2013-11-07 |
| Semiconductor device Grant 8,466,515 - Terashima June 18, 2 | 2013-06-18 |
| Semiconductor device supplying charging current to element to be charged Grant 8,395,231 - Terashima March 12, 2 | 2013-03-12 |
| Semiconductor Device Supplying Charging Current To Element To Be Charged App 20120319739 - TERASHIMA; Tomohide | 2012-12-20 |
| Semiconductor Device App 20120168767 - TERASHIMA; Tomohide | 2012-07-05 |
| Semiconductor Device App 20120049240 - TERASHIMA; Tomohide | 2012-03-01 |
| Semiconductor device internally having insulated gate bipolar transistor Grant 8,120,107 - Terashima February 21, 2 | 2012-02-21 |
| Semiconductor device Grant 8,093,660 - Terashima January 10, 2 | 2012-01-10 |
| Semiconductor Device Internally Having Insulated Gate Bipolar Transistor App 20110108882 - TERASHIMA; Tomohide | 2011-05-12 |
| Semiconductor device internally having insulated gate bipolar transistor Grant 7,898,029 - Terashima March 1, 2 | 2011-03-01 |
| Semiconductor device with a plurality of isolated conductive films Grant 7,855,427 - Terashima December 21, 2 | 2010-12-21 |
| Semiconductor device with a high breakdown voltage device Grant 7,825,430 - Terashima November 2, 2 | 2010-11-02 |
| Structure of a high breakdown voltage element for use in high power application Grant 7,786,532 - Terashima August 31, 2 | 2010-08-31 |
| Semiconductor device provided with floating electrode Grant 7,755,168 - Terashima , et al. July 13, 2 | 2010-07-13 |
| Semiconductor Device Internally Having Insulated Gate Bipolar Transistor App 20100148214 - TERASHIMA; Tomohide | 2010-06-17 |
| Semiconductor device Grant 7,723,802 - Terashima May 25, 2 | 2010-05-25 |
| Semiconductor device Grant 7,709,925 - Takahashi , et al. May 4, 2 | 2010-05-04 |
| Semiconductor Device App 20090294799 - TERASHIMA; Tomohide | 2009-12-03 |
| Semiconductor device Grant 7,598,587 - Terashima October 6, 2 | 2009-10-06 |
| Semiconductor device Grant 7,595,536 - Terashima September 29, 2 | 2009-09-29 |
| Integrated semiconductor device and method of manufacturing thereof Grant 7,541,248 - Nitta , et al. June 2, 2 | 2009-06-02 |
| Semiconductor Device App 20090057712 - TERASHIMA; Tomohide | 2009-03-05 |
| Structure of a high breakdown voltage element for use in high power applications Grant 7,473,965 - Terashima January 6, 2 | 2009-01-06 |
| Semiconductor Device With A Plurality Of Isolated Conductive Films App 20080290443 - TERASHIMA; Tomohide | 2008-11-27 |
| Semiconductor Device App 20080251811 - Terashima; Tomohide | 2008-10-16 |
| Semiconductor Device Supplying Charging Current To Element To Be Charged App 20080224736 - TERASHIMA; Tomohide | 2008-09-18 |
| Semiconductor Device App 20080179663 - TERASHIMA; Tomohide | 2008-07-31 |
| Semiconductor Device Provided With Floating Electrode App 20080093707 - Terashima; Tomohide ; et al. | 2008-04-24 |
| Semiconductor Device App 20070176220 - Takahashi; Tetsuo ; et al. | 2007-08-02 |
| Integrated semiconductor device and method of manufacturing thereof App 20070148874 - Nitta; Tetsuya ; et al. | 2007-06-28 |
| Semiconductor Device App 20070063293 - TERASHIMA; Tomohide | 2007-03-22 |
| Integrated semiconductor device and method of manufacturing thereof Grant 7,186,623 - Nitta , et al. March 6, 2 | 2007-03-06 |
| Semiconductor device and driving circuit for semiconductor device Grant 7,071,516 - Terashima July 4, 2 | 2006-07-04 |
| Semiconductor device App 20060043417 - Terashima; Tomohide | 2006-03-02 |
| Semiconductor device App 20060043475 - Terashima; Tomohide | 2006-03-02 |
| Semiconductor device with structure for improving breakdown voltage App 20050212042 - Terashima, Tomohide | 2005-09-29 |
| Semiconductor device with structure for improving breakdown voltage Grant 6,921,945 - Terashima July 26, 2 | 2005-07-26 |
| Semiconductor device Grant 6,894,348 - Terashima May 17, 2 | 2005-05-17 |
| Semiconductor device with region that changes depth across the direction of current flow Grant 6,878,998 - Terashima April 12, 2 | 2005-04-12 |
| Semiconductor device and driving circuit for semiconductor device App 20050072990 - Terashima, Tomohide | 2005-04-07 |
| Semiconductor device Grant 6,864,550 - Terashima March 8, 2 | 2005-03-08 |
| Semiconductor device having a separation structure for high withstand voltage Grant 6,838,745 - Terashima , et al. January 4, 2 | 2005-01-04 |
| Semiconductor device with structure for improving breakdown voltage App 20040227188 - Terashima, Tomohide | 2004-11-18 |
| Semiconductor Device App 20040178471 - Terashima, Tomohide | 2004-09-16 |
| Integrated semiconductor device and method of manufacturing thereof App 20040145027 - Nitta, Tetsuya ; et al. | 2004-07-29 |
| Semiconductor circuit Grant 6,642,120 - Terashima November 4, 2 | 2003-11-04 |
| Semiconductor device and method of manufacturing the same Grant 6,642,599 - Watabe , et al. November 4, 2 | 2003-11-04 |
| Semiconductor device having a device formation region protected from a counterelectromotive force Grant 6,639,294 - Furuya , et al. October 28, 2 | 2003-10-28 |
| Semiconductor device Grant 6,605,829 - Terashima August 12, 2 | 2003-08-12 |
| Semiconductor Device Having A Device Formation Region Protected From A Counterelectromotive Force App 20030146487 - Furuya, Keiichi ; et al. | 2003-08-07 |
| High voltage breakdown isolation semiconductor device and manufacturing process for making the device Grant 6,596,575 - Nagatani , et al. July 22, 2 | 2003-07-22 |
| Semiconductor circuit App 20030111694 - Terashima, Tomohide | 2003-06-19 |
| Semiconductor device and process for the same Grant 6,515,349 - Terashima February 4, 2 | 2003-02-04 |
| Semiconductor device App 20030015765 - Yamashita, Yasunori ; et al. | 2003-01-23 |
| Semiconductor device App 20030006458 - Terashima, Tomohide | 2003-01-09 |
| High voltage breakdown isolation semiconductor device and manufacturing process for making the device App 20020089028 - Nagatani, Tatsuhiko ; et al. | 2002-07-11 |
| Field MOS transistor and semiconductor integrated circuit including the same App 20020066930 - Terashima, Tomohide | 2002-06-06 |
| Semiconductor device App 20020060341 - Terashima, Tomohide | 2002-05-23 |
| Semiconductor device and process for the same App 20020053719 - Terashima, Tomohide | 2002-05-09 |
| High voltage breakdown isolation semiconductor device and manufacturing process for making the device Grant 6,376,891 - Nagatani , et al. April 23, 2 | 2002-04-23 |
| Semiconductor device with DMOS and bi-polar transistors Grant 6,359,318 - Yamamoto , et al. March 19, 2 | 2002-03-19 |
| Semiconductor device containing a diode Grant 6,191,466 - Yamashita , et al. February 20, 2 | 2001-02-20 |
| Semiconductor device having a high breakdown voltage isolation region Grant 5,894,156 - Terashima , et al. April 13, 1 | 1999-04-13 |
| Semiconductor device with high breakdown voltage island region Grant 5,889,310 - Terashima , et al. March 30, 1 | 1999-03-30 |
| Semiconductor device including a lateral power device Grant 5,874,767 - Terashima , et al. February 23, 1 | 1999-02-23 |
| Semiconductor device having element with high breakdown voltage Grant 5,731,628 - Terashima March 24, 1 | 1998-03-24 |
| VDMOS semiconductor device Grant 5,541,430 - Terashima July 30, 1 | 1996-07-30 |
| Semiconductor memory device and a method of using the same Grant 5,497,011 - Terashima March 5, 1 | 1996-03-05 |
| Semiconductor device with increased breakdown voltage Grant 5,495,124 - Terashima February 27, 1 | 1996-02-27 |
| Dielectric element isolated semiconductor device and a method of manufacturing the same Grant 5,485,030 - Terashima January 16, 1 | 1996-01-16 |
| High breakdown voltage type semiconductor device Grant 5,428,241 - Terashima June 27, 1 | 1995-06-27 |
| Method of fabricating an insulated gate bipolar transistor Grant 5,372,954 - Terashima December 13, 1 | 1994-12-13 |
| Method of fabricating a semiconductor device Grant 5,360,746 - Terashima November 1, 1 | 1994-11-01 |
| Method of manufacturing vertical DMOS transistor with high off-breakdown-voltage and low on-resistance Grant 5,344,789 - Terashima September 6, 1 | 1994-09-06 |
| Method of forming a semiconductor device which prevents field concentration Grant 5,334,546 - Terashima August 2, 1 | 1994-08-02 |
| Insulated gate bipolar transistor Grant 5,289,019 - Terashima February 22, 1 | 1994-02-22 |
| Structure for preventing field concentration in semiconductor device and method of forming the same Grant 5,204,545 - Terashima April 20, 1 | 1993-04-20 |
| Thyristor and method of manufacturing the same Grant 5,194,394 - Terashima March 16, 1 | 1993-03-16 |
| Thyristor device with improved turn-off characteristics Grant 5,155,569 - Terashima October 13, 1 | 1992-10-13 |
| Semiconductor device and method of manufacturing the same Grant 5,100,814 - Yamaguchi , et al. March 31, 1 | 1992-03-31 |
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