| Patent | Date |
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Active region containing nanodots (also referred to as "quantum dots") in mother crystal formed of zinc blende-type (also referred to as "cubic crystal-type") AlyInxGal-y-xN Crystal (y[[.quadrature.]][.gtoreq.] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
Grant 9,755,111 - Terashima , et al. September 5, 2 | 2017-09-05 |
Method for producing GaN-based crystal and semiconductor device
Grant 9,595,632 - Terashima , et al. March 14, 2 | 2017-03-14 |
ACTIVE REGION CONTAINING NANODOTS (ALSO REFERRED TO AS "QUANTUM DOTS") INMOTHER CRYSTAL FORMED OF ZINC BLENDE-TYPE (ALSO REFERRED TO AS "CUBICCRYSTAL-TYPE") AlyInxGal-y-xN CRYSTAL(Y . 0, X>0) GROWN ON Si SUBSTRATE, AND LIGHTEMITTING DEVICE USING THE SAME (LED AND LD)
App 20160087153 - Terashima; Kazutaka ; et al. | 2016-03-24 |
METHOD FOR PRODUCING GaN-BASED CRYSTAL AND SEMICONDUCTOR DEVICE
App 20150194569 - TERASHIMA; Kazutaka ; et al. | 2015-07-09 |
Crystallization method and crystallization apparatus
Grant 7,875,118 - Oyama , et al. January 25, 2 | 2011-01-25 |
Method for Manufacturing Compound Semiconductor and Apparatus for Manufacturing the Same
App 20100297786 - Terashima; Kazutaka ; et al. | 2010-11-25 |
Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals
Grant 7,696,690 - Terashima , et al. April 13, 2 | 2010-04-13 |
Crystallization Method And Crystallization Apparatus
App 20080134962 - OYAMA; Yasunao ; et al. | 2008-06-12 |
Light-emitting element device, light-receiving element device, optical device, fluoride crystals, production method of fluoride crystals, and crucible
App 20060038194 - Terashima; Kazutaka ; et al. | 2006-02-23 |
Semiconductor wafer and its manufacturing method
Grant 6,936,490 - Abe , et al. August 30, 2 | 2005-08-30 |
Method of forming group-III nitride semiconductor layer on a light-emitting device
Grant 6,828,169 - Terashima , et al. December 7, 2 | 2004-12-07 |
Semiconductor wafer and its manufacturing method
App 20040053438 - Abe, Yoshihisa ; et al. | 2004-03-18 |
Method of forming group-III nitride semiconductor layer on a light-emitting device
App 20030224548 - Terashima, Kazutaka ; et al. | 2003-12-04 |
Method of epitaxial lateral overgrowth
App 20030198301 - Terashima, Kazutaka ; et al. | 2003-10-23 |
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
Grant 6,194,744 - Udagawa , et al. February 27, 2 | 2001-02-27 |
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
Grant 6,069,021 - Terashima , et al. May 30, 2 | 2000-05-30 |
Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
Grant 6,019,837 - Maeda , et al. February 1, 2 | 2000-02-01 |
Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
Grant 6,004,393 - Maeda , et al. December 21, 1 | 1999-12-21 |
Control of oxygen concentration in single crystal pulled up from melt containing Group-V element
Grant 5,524,574 - Huang , et al. June 11, 1 | 1996-06-11 |
Single crystal pulling apparatus having slidable shield plate to control area of opening around single crystal
Grant 5,450,814 - Shiraishi , et al. September 19, 1 | 1995-09-19 |
Wavelength converting optical device
Grant 5,377,291 - Hatakoshi , et al. December 27, 1 | 1994-12-27 |
Methods of manufacturing compound semiconductor crystals and apparatus for the same
Grant 5,030,315 - Washizuka , et al. July 9, 1 | 1991-07-09 |
Method for purifying group II-IV compound semiconductors
Grant 4,960,721 - Terashima , et al. October 2, 1 | 1990-10-02 |
Method for manufacture of III-V compound semiconducting single crystal
Grant 4,496,424 - Terashima , et al. January 29, 1 | 1985-01-29 |
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