loadpatents
name:-0.017667055130005
name:-0.019015073776245
name:-0.00062394142150879
Terano; Toshio Patent Filings

Terano; Toshio

Patent Applications and Registrations

Patent applications and USPTO patent grants for Terano; Toshio.The latest application filed is for "semiconductor integrated circuit".

Company Profile
0.15.14
  • Terano; Toshio - Osaka N/A JP
  • Terano; Toshio - Kanagawa JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor integrated circuit
Grant 8,520,463 - Sumitani , et al. August 27, 2
2013-08-27
Semiconductor memory device
Grant 8,345,470 - Satomi , et al. January 1, 2
2013-01-01
Semiconductor Integrated Circuit
App 20120155211 - SUMITANI; NORIHIKO ;   et al.
2012-06-21
Semiconductor memory device
Grant 8,077,530 - Ishikura , et al. December 13, 2
2011-12-13
Semiconductor Memory Device
App 20110188327 - ISHIKURA; Satoshi ;   et al.
2011-08-04
Semiconductor memory device
Grant 7,948,787 - Ishikura , et al. May 24, 2
2011-05-24
Semiconductor Memory Device
App 20110103126 - SATOMI; Katsuji ;   et al.
2011-05-05
Semiconductor memory device
Grant 7,872,893 - Kurumada , et al. January 18, 2
2011-01-18
Semiconductor Memory Device
App 20110007575 - ISHIKURA; Satoshi ;   et al.
2011-01-13
Semiconductor memory device
Grant 7,839,697 - Ishikura , et al. November 23, 2
2010-11-23
Semiconductor integrated circuit
Grant 7,692,955 - Terada , et al. April 6, 2
2010-04-06
Non-volatile semiconductor memory device
Grant 7,453,118 - Tomiie , et al. November 18, 2
2008-11-18
Semiconductor Integrated Circuit
App 20080253171 - Terada; Yutaka ;   et al.
2008-10-16
Semiconductor Memory Device
App 20080151606 - KURUMADA; Marefusa ;   et al.
2008-06-26
Semiconductor Memory Device
App 20080151653 - ISHIKURA; Satoshi ;   et al.
2008-06-26
Semiconductor device and method of producing the same
Grant 7,227,255 - Nomoto , et al. June 5, 2
2007-06-05
Method of fabricating a memory transistor array utilizing insulated word lines as gate electrodes
Grant 7,049,180 - Nomoto , et al. May 23, 2
2006-05-23
Memory transistor array utilizing insulated word lines as gate electrodes
Grant 7,023,061 - Nomoto , et al. April 4, 2
2006-04-04
Memory transistor array utilizing insulated word lines as gate electrodes
Grant 7,012,329 - Nomoto , et al. March 14, 2
2006-03-14
Semiconductor device and method of producing the same
App 20050255652 - Nomoto, Kazumasa ;   et al.
2005-11-17
Semiconductor device and method of producing the same
App 20050218522 - Nomoto, Kazumasa ;   et al.
2005-10-06
Semiconductor device and method of producing the same
App 20050189570 - Nomoto, Kazumasa ;   et al.
2005-09-01
Non-volatile semiconductor memory device
App 20050161701 - Tomiie, Hideto ;   et al.
2005-07-28
Semiconductor device and method of producing the same
App 20050146015 - Nomoto, Kazumasa ;   et al.
2005-07-07
Nonvolatile semiconductor memory device
Grant 6,911,691 - Tomiie , et al. June 28, 2
2005-06-28
Semiconductor device and method of producing the same
Grant 6,891,262 - Nomoto , et al. May 10, 2
2005-05-10
Nonvolatile semiconductor memory
App 20040026733 - Tomiie, Hideto ;   et al.
2004-02-12
Semiconductor device and method of producing the same
App 20030025147 - Nomoto, Kazumasa ;   et al.
2003-02-06

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