loadpatents
name:-0.0016131401062012
name:-0.037950992584229
name:-0.00045013427734375
Terada; Yasushi Patent Filings

Terada; Yasushi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Terada; Yasushi.The latest application filed is for "electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor".

Company Profile
0.31.0
  • Terada; Yasushi - Hyogo-ken JP
  • Terada; Yasushi - Hyogo JP
  • Terada; Yasushi - Itami JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
Grant 5,898,606 - Kobayashi , et al. April 27, 1
1999-04-27
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
Grant 5,745,417 - Kobayashi , et al. April 28, 1
1998-04-28
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
Grant 5,659,505 - Kobayashi , et al. August 19, 1
1997-08-19
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
Grant 5,615,149 - Kobayashi , et al. March 25, 1
1997-03-25
Nonvolatile semiconductor memory device with a row redundancy circuit
Grant 5,602,778 - Futatsuya , et al. February 11, 1
1997-02-11
Nonvolatile semiconductor memory device with a row redundancy circuit
Grant 5,548,557 - Futatsuya , et al. August 20, 1
1996-08-20
Electrically erasable and programmable non-volatile memory device and a method of operating the same
Grant 5,428,568 - Kobayashi , et al. June 27, 1
1995-06-27
Nonvolatile semiconductor memory device capable of erasing by a word line unit
Grant 5,402,382 - Miyawaki , et al. March 28, 1
1995-03-28
Internal voltage generator for a non-volatile semiconductor memory device
Grant 5,371,705 - Nakayama , et al. December 6, 1
1994-12-06
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
Grant 5,363,330 - Kobayashi , et al. November 8, 1
1994-11-08
Nonvolatile semiconductor memory device
Grant 5,347,490 - Terada , et al. September 13, 1
1994-09-13
Nonvolatile semiconductor memory device and data erasing method thereof
Grant 5,297,096 - Terada , et al. March 22, 1
1994-03-22
Non-volatile semiconductor memory device
Grant 5,283,758 - Nakayama , et al. February 1, 1
1994-02-01
Semiconductor memory device having error correcting function
Grant 5,233,610 - Nakayama , et al. August 3, 1
1993-08-03
Divided word line type non-volatile semiconductor memory device
Grant 5,132,928 - Hayashikoshi , et al. July 21, 1
1992-07-21
Nonvolatile content-addressable memory and operating method therefor
Grant 5,111,427 - Kobayashi , et al. May 5, 1
1992-05-05
Low current semiconductor memory device
Grant 5,105,384 - Noguchi , et al. April 14, 1
1992-04-14
Semiconductor memory device having reading operation of information by differential amplification
Grant 5,022,009 - Terada , et al. June 4, 1
1991-06-04
Semiconductor integrated circuit having multiple self-test functions and operating method therefor
Grant 4,970,727 - Miyawaki , et al. November 13, 1
1990-11-13
Nonvolatile semiconductor memory device and a writing method using electron tunneling
Grant 4,958,317 - Terada , et al. September 18, 1
1990-09-18
Nonvolatile semiconductor memory device capable of reliably writing data and a data writing method therefor
Grant 4,953,129 - Kobayashi , et al. August 28, 1
1990-08-28
Non-volatile semiconductor memory device
Grant 4,933,906 - Terada , et al. June 12, 1
1990-06-12
Nonvolatile semiconductor memory device and a writing method therefor
Grant 4,903,236 - Nakayama , et al. February 20, 1
1990-02-20
Nonvolatile semiconductor memory device
Grant 4,813,018 - Kobayashi , et al. March 14, 1
1989-03-14
Data integrity verifying circuit for electrically erasable and programmable read only memory (EEPROM)
Grant 4,811,294 - Kobayashi , et al. March 7, 1
1989-03-07
Nonvolatile semiconductor memory device
Grant 4,805,151 - Terada , et al. February 14, 1
1989-02-14
Nonvolatile semiconductor memory device
Grant 4,760,556 - Deguchi , et al. July 26, 1
1988-07-26
Semiconductor memory device with high voltage switch
Grant 4,733,371 - Terada , et al. March 22, 1
1988-03-22
Nonvolatile semiconductor memory device
Grant 4,725,983 - Terada February 16, 1
1988-02-16
Semiconductor device
Grant 4,694,314 - Terada , et al. September 15, 1
1987-09-15
Semiconductor memory device
Grant 4,691,216 - Terada , et al. September 1, 1
1987-09-01

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