| Patent | Date |
|---|
Method of metalizing a semiconductor power device ceramic member
App 20010026840 - Ozmat, Burhan ; et al. | 2001-10-04 |
Hermetic thin pack semiconductor device
Grant 6,157,076 - Azotea , et al. December 5, 2 | 2000-12-05 |
Flat power pack
Grant 6,057,612 - Temple May 2, 2 | 2000-05-02 |
Protection device for solid state switched power electronics
Grant 5,995,349 - Temple November 30, 1 | 1999-11-30 |
Asymmetric snubber resistor
Grant 5,880,513 - Temple , et al. March 9, 1 | 1999-03-09 |
Device for isolating parallel sub-elements with reverse conducting diode regions
Grant 5,594,261 - Temple January 14, 1 | 1997-01-14 |
Semiconductor device with a foil-sealed lid
Grant 5,521,436 - Temple * May 28, 1 | 1996-05-28 |
Semi-conductor chip having interdigitated gate runners with gate bonding pads
Grant 5,497,013 - Temple March 5, 1 | 1996-03-05 |
Package for parallel subelement semiconductor devices
Grant 5,473,193 - Temple , et al. December 5, 1 | 1995-12-05 |
Fast turn on switch circuit with parallel MOS controlled thyristor and silicon controlled rectifier
Grant 5,463,344 - Temple October 31, 1 | 1995-10-31 |
Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices
Grant 5,424,563 - Temple , et al. June 13, 1 | 1995-06-13 |
Mesh geometry for MOS-gated semiconductor devices
Grant 5,399,892 - Neilson , et al. March 21, 1 | 1995-03-21 |
Semi-conductor chip packaging method and semi-conductor chip having interdigitated gate runners with gate bonding pads
Grant 5,366,932 - Temple November 22, 1 | 1994-11-22 |
Field effect transistor controlled thyristor having improved turn-on characteristics
Grant 5,260,590 - Temple November 9, 1 | 1993-11-09 |
Semiconductor devices and methods of assembly thereof
Grant 5,248,901 - Temple September 28, 1 | 1993-09-28 |
Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid
Grant 5,209,390 - Temple , et al. May 11, 1 | 1993-05-11 |
Batch assembly of high density hermetic packages for power semiconductor chips
Grant 5,139,972 - Neugebauer , et al. August 18, 1 | 1992-08-18 |
Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
Grant 5,135,890 - Temple , et al. August 4, 1 | 1992-08-04 |
Method of packaging a semiconductor chip in a low inductance package
Grant 5,105,536 - Neugebauer , et al. April 21, 1 | 1992-04-21 |
Hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
Grant 5,103,290 - Temple , et al. April 7, 1 | 1992-04-07 |
Method of fabricating a field effect semiconductor device having a self-aligned structure
Grant 5,082,795 - Temple January 21, 1 | 1992-01-21 |
High current hermetic package having a lead extending through the package lid and a packaged semiconductor chip
Grant 5,028,987 - Neugebauer , et al. July 2, 1 | 1991-07-02 |
Symmetrical blocking high voltage breakdown semiconducotr device
Grant 4,999,684 - Temple March 12, 1 | 1991-03-12 |
MOS protection device
Grant 4,980,741 - Temple December 25, 1 | 1990-12-25 |
Semiconductor devices exhibiting minimum on-resistance
Grant 4,941,026 - Temple July 10, 1 | 1990-07-10 |
Method of making high breakdown voltage semiconductor device
Grant 4,927,772 - Arthur , et al. May 22, 1 | 1990-05-22 |
Method of making symmetrical blocking high voltage breakdown semiconductor device
Grant 4,904,609 - Temple February 27, 1 | 1990-02-27 |
Hermetic semiconductor enclosure
Grant 4,905,075 - Temple , et al. February 27, 1 | 1990-02-27 |
Lateral metal-oxide-semiconductor controlled triacs
Grant 4,857,977 - Temple August 15, 1 | 1989-08-15 |
Insulated gate semiconductor device with extra short grid and method of fabrication
Grant 4,821,095 - Temple April 11, 1 | 1989-04-11 |
Semiconductor device having turn-on and turn-off capabilities
Grant 4,816,892 - Temple March 28, 1 | 1989-03-28 |
Simple automated discretionary bonding of multiple parallel elements
Grant 4,814,283 - Temple , et al. March 21, 1 | 1989-03-21 |
Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
Grant 4,809,047 - Temple February 28, 1 | 1989-02-28 |
Method of making high breakdown voltage semiconductor device
Grant 4,648,174 - Temple , et al. March 10, 1 | 1987-03-10 |
Method of making an insulated-gate semiconductor device with improved shorting region
Grant 4,644,637 - Temple February 24, 1 | 1987-02-24 |
Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions
Grant 4,646,117 - Temple February 24, 1 | 1987-02-24 |
High voltage semiconductor device having an improved DV/DT capability and plasma spreading
Grant 4,622,572 - Temple November 11, 1 | 1986-11-11 |
Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
Grant 4,620,211 - Baliga , et al. October 28, 1 | 1986-10-28 |
Process for manufacturing insulated-gate semiconductor devices with integral shorts
Grant 4,466,176 - Temple August 21, 1 | 1984-08-21 |
Minimal mask process for manufacturing insulated-gate semiconductor devices with integral shorts
Grant 4,430,792 - Temple February 14, 1 | 1984-02-14 |
Processes for manufacturing insulated-gate semiconductor devices with integral shorts
Grant 4,417,385 - Temple November 29, 1 | 1983-11-29 |
High breakdown voltage semiconductor device
Grant 4,374,389 - Temple February 15, 1 | 1983-02-15 |
Thyristor with segmented turn-on line for directing turn-on current
Grant 4,352,118 - Temple September 28, 1 | 1982-09-28 |
Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means
Grant 4,305,084 - Temple December 8, 1 | 1981-12-08 |
High switching speed P-N junction devices with recombination means centrally located in high resistivity layer
Grant 4,259,683 - Adler , et al. March 31, 1 | 1981-03-31 |
High breakdown voltage semiconductor device
Grant 4,242,690 - Temple December 30, 1 | 1980-12-30 |
Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
Grant 4,165,517 - Temple , et al. August 21, 1 | 1979-08-21 |
Light-activated semiconductor device package unit
Grant 4,144,541 - Schaefer , et al. March 13, 1 | 1979-03-13 |
Thyristor device with self-protection against breakover turn-on failure
Grant 4,079,403 - Temple March 14, 1 | 1978-03-14 |
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