Tekleab; Daniel G.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Tekleab; Daniel G..The latest application filed is for "dual high-k oxides with sige channel".
- Tekleab; Daniel G. - Austin TX
- Tekleab; Daniel G. - Wappingers Falls NY
- Tekleab; Daniel G. - Wappingers Fallls NY
| Patent | Date |
|---|---|
| Method to improve source/drain parasitics in vertical devices Grant 8,258,035 - Mathew , et al. September 4, 2 | 2012-09-04 |
| Dual high-k oxides with sige channel Grant 8,017,469 - Luo , et al. September 13, 2 | 2011-09-13 |
| Dual High-k Oxides With Sige Channel App 20100184260 - Luo; Tien-Ying ; et al. | 2010-07-22 |
| Optimized Compressive SiGe Channel PMOS Transistor with Engineered Ge Profile and Optimized Silicon Cap Layer App 20100109044 - Tekleab; Daniel G. ; et al. | 2010-05-06 |
| Method to improve source/drain parasitics in vertical devices App 20080274600 - Mathew; Leo ; et al. | 2008-11-06 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.
| 