loadpatents
name:-0.17675709724426
name:-0.032907009124756
name:-0.00056695938110352
Teh; Young Way Patent Filings

Teh; Young Way

Patent Applications and Registrations

Patent applications and USPTO patent grants for Teh; Young Way.The latest application filed is for "semiconductor device with an oversized local contact as a faraday shield".

Company Profile
0.30.28
  • Teh; Young Way - Wappingers Falls NY US
  • Teh; Young Way - Wappinger Falls NY
  • Teh; Young Way - Singapore N/A SG
  • Teh; Young Way - US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High-K metal gate device
Grant 8,853,796 - Teh , et al. October 7, 2
2014-10-07
Semiconductor device with an oversized local contact as a Faraday shield
Grant 8,664,717 - Liu , et al. March 4, 2
2014-03-04
Spacer-less low-K dielectric processes
Grant 8,624,329 - Lee , et al. January 7, 2
2014-01-07
Integrated circuit structure having substantially planar N-P step height and methods of forming
Grant 8,563,394 - Li , et al. October 22, 2
2013-10-22
Poly profile engineering to modulate spacer induced stress for device enhancement
Grant 8,519,445 - Ho , et al. August 27, 2
2013-08-27
Semiconductor Device With an Oversized Local Contact as a Faraday Shield
App 20130175617 - Liu; Yanxiang ;   et al.
2013-07-11
Spacer and process to enhance the strain in the channel with stress liner
Grant 8,461,009 - Ajmera , et al. June 11, 2
2013-06-11
High-k Metal Gate Device
App 20120292719 - TEH; Young Way ;   et al.
2012-11-22
Integrated Circuit Structure Having Substantially Planar N-p Step Height And Methods Of Forming
App 20120256268 - Li; Weipeng ;   et al.
2012-10-11
Balancing NFET and PFET performance using straining layers
Grant 8,106,462 - Chen , et al. January 31, 2
2012-01-31
Poly Profile Engineering To Modulate Spacer Induced Stress For Device Enhancement
App 20110266628 - HO; Vincent ;   et al.
2011-11-03
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
Grant 7,999,325 - Teh , et al. August 16, 2
2011-08-16
Poly profile engineering to modulate spacer induced stress for device enhancement
Grant 7,993,997 - Ho , et al. August 9, 2
2011-08-09
Balancing Nfet And Pfet Performance Using Straining Layers
App 20110169096 - Chen; Xiangdong ;   et al.
2011-07-14
Method and apparatus for post silicide spacer removal
Grant 7,977,185 - Greene , et al. July 12, 2
2011-07-12
Method for transistor fabrication with optimized performance
Grant 7,883,953 - Zhang , et al. February 8, 2
2011-02-08
Integrated circuit system for suppressing short channel effects
Grant 7,867,835 - Lee , et al. January 11, 2
2011-01-11
Dual stress memory technique method and related structure
Grant 7,785,950 - Fang , et al. August 31, 2
2010-08-31
Methods of forming semiconductor devices using embedded L-shape spacers
Grant 7,759,206 - Luo , et al. July 20, 2
2010-07-20
Method for Transistor Fabrication with Optimized Performance
App 20100078687 - Zhang; Da ;   et al.
2010-04-01
Spacer-less Low-K Dielectric Processes
App 20100059831 - Lee; Yong Meng ;   et al.
2010-03-11
Implantation for shallow trench isolation (STI) formation and for stress for transistor performance enhancement
App 20090315115 - Zhang; Beichao ;   et al.
2009-12-24
Spacer-less low-k dielectric processes
Grant 7,615,427 - Lee , et al. November 10, 2
2009-11-10
Integrated Circuit System For Suppressing Short Channel Effects
App 20090218636 - Lee; Jae Gon ;   et al.
2009-09-03
Method for improved fabrication of a semiconductor using a stress proximity technique process
Grant 7,531,401 - Baiocco , et al. May 12, 2
2009-05-12
Poly Profile Engineering To Modulate Spacer Induced Stress For Device Enhancement
App 20090085122 - Ho; Vincent ;   et al.
2009-04-02
Method To Remove Spacer After Salicidation To Enhance Contact Etch Stop Liner Stress On Mos
App 20090026549 - TEH; Young Way ;   et al.
2009-01-29
Semiconductor System Having Complementary Strained Channels
App 20080315317 - Lai; Chung Woh ;   et al.
2008-12-25
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
Grant 7,445,978 - Teh , et al. November 4, 2
2008-11-04
Method For Improved Fabrication Of A Semiconductor Using A Stress Proximity Technique Process
App 20080191284 - Baiocco; Christopher Vincent ;   et al.
2008-08-14
Integrated Circuit System Having Strained Transistor
App 20080142897 - Teh; Young Way ;   et al.
2008-06-19
Integrated Circuit System Having Strained Transistor
App 20080044967 - Teh; Young Way ;   et al.
2008-02-21
Semiconductor Device Having a Dual Stress Liner and Light Exposure Apparatus for Forming the Dual Stress Liner
App 20080029823 - Park; Jae-Eon ;   et al.
2008-02-07
Differential mechanical stress-producing regions for integrated circuit field effect transistors
Grant 7,307,320 - Sun , et al. December 11, 2
2007-12-11
Spacer-less low-k dielectric processes
App 20070281410 - Lee; Yong Meng ;   et al.
2007-12-06
Methods of fabricating semiconductor devices having a dual stress liner
Grant 7,297,584 - Park , et al. November 20, 2
2007-11-20
Spacer And Process To Enhance The Strain In The Channel With Stress Liner
App 20070202654 - Ajmera; Atul C. ;   et al.
2007-08-30
Composite stress spacer
Grant 7,256,084 - Lim , et al. August 14, 2
2007-08-14
Method And Apparatus For Post Silicide Spacer Removal
App 20070161244 - Greene; Brian J. ;   et al.
2007-07-12
Methods Of Forming Semiconductor Devices Using Embedded L-shape Spacers
App 20070122988 - Luo; Zhijiong ;   et al.
2007-05-31
Dual Stress Memory Technique Method And Related Structure
App 20070105299 - Fang; Sunfei ;   et al.
2007-05-10
Differential mechanical stress-producing regions for integrated circuit field effect transistors
App 20070102779 - Sun; Min-Chul ;   et al.
2007-05-10
Semiconductor device having a dual stress liner, method of manufacturing the semiconductor device and light exposure apparatus for forming the dual stress liner
App 20070082439 - Park; Jae-Eon ;   et al.
2007-04-12
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
App 20060249794 - Teh; Young Way ;   et al.
2006-11-09
Composite stress spacer
App 20060252194 - Lim; Khee Yong ;   et al.
2006-11-09
Copper metal structure for the reduction of intra-metal capacitance
Grant 6,815,823 - Teh , et al. November 9, 2
2004-11-09
Novel copper metal structure for the reduction of intra-metal capacitance
App 20040065956 - Teh, Young-Way ;   et al.
2004-04-08
Copper metal structure for the reduction of intra-metal capacitance
Grant 6,649,517 - Teh , et al. November 18, 2
2003-11-18
Novel copper metal structure for the reduction of intra-metal capacitance
App 20020175414 - Teh, Young-Way ;   et al.
2002-11-28
Method for fabricating an air gap shallow trench isolation (STI) structure
Grant 6,406,975 - Lim , et al. June 18, 2
2002-06-18
Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures
Grant 6,380,106 - Lim , et al. April 30, 2
2002-04-30

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