Technologies and Devices International, Inc.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Technologies and Devices International, Inc..The latest application filed is for "method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby".

Company Profile

0.11.7

Technologies and Devices International, Inc. - Silver Springs MD
Technologies and Devices International, Inc. - Silver Spring MD
TECHNOLOGIES AND DEVICES INTERNATIONAL, INC. - 12214 Plum Orchard Drive Silver Springs MD
Technologies and Devices International, Inc. -
Technologies and Devices International, Inc. - Gaithersburg MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby Grant 7,727,333 - Syrkin , et al. June 1, 2	2010-06-01
Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE Grant 7,670,435 - Tsvetkov , et al. March 2, 2	2010-03-02
Reactor for extended duration growth of gallium containing single crystals Grant 7,611,586 - Melnik , et al. November 3, 2	2009-11-03
Method For Simultaneously Producing Multiple Wafers During A Single Epitaxial Growth Run And Semiconductor Structure Grown Thereby App 20090130781 - Dmitriev; Vladimir A. ; et al.	2009-05-21
Method And Apparatus For Fabricating Crack-free Group Iii Nitride Semiconductor Materials App 20090092815 - Dmitriev; Vladimir A. ; et al.	2009-04-09
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Grant 7,501,023 - Dmitriev , et al. March 10, 2	2009-03-10
Reactor For Extended Duration Growth Of Gallium Containing Single Crystals App 20080022926 - Melnik; Yuri V. ; et al.	2008-01-31
Reactor for extended duration growth of gallium containing single crystals Grant 7,279,047 - Melnik , et al. October 9, 2	2007-10-09
Method and apparatus for fabricating crack-free group III nitride semiconductor materials App 20060280668 - Dmitriev; Vladimir A. ; et al.	2006-12-14
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer Grant 6,849,862 - Nikolaev , et al. February 1, 2	2005-02-01
Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE Grant 6,660,083 - Tsvetkov , et al. December 9, 2	2003-12-09
Method of crystal growth and resulted structures Grant 6,579,359 - Mynbaeva , et al. June 17, 2	2003-06-17
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers Grant 6,559,467 - Nikolaev , et al. May 6, 2	2003-05-06
Method for growing p-type III-V compound material utilizing HVPE techniques Grant 6,555,452 - Nikolaev , et al. April 29, 2	2003-04-29
Apparatus for epitaxially for growing semiconductor device structures with submicron group III nitride layer utilizing HVPE App 20020174833 - Tsvetkov, Denis V. ; et al.	2002-11-28
Method of epitaxially growing submicron group III nitride layers utilizing HVPE App 20020177312 - Tsvetkov, Denis V. ; et al.	2002-11-28
III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer Grant 6,479,839 - Nikolaev , et al. November 12, 2	2002-11-12
Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE App 20020155713 - Tsvetkov, Denis V. ; et al.	2002-10-24

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