loadpatents
name:-0.055768013000488
name:-1.2879550457001
name:-0.27969312667847
Tatsumi; Toru Patent Filings

Tatsumi; Toru

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tatsumi; Toru.The latest application filed is for "semiconductor device and method of manufacturing the same".

Company Profile
0.39.26
  • Tatsumi; Toru - Tokyo N/A JP
  • Tatsumi; Toru - Hachioji JP
  • Tatsumi; Toru - Kawasaki-shi JP
  • Tatsumi; Toru - Minato-ku JP
  • Tatsumi; Toru - Kyoto JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Methods for manufacturing dielectric films
Grant 8,524,617 - Nakagawa , et al. September 3, 2
2013-09-03
Semiconductor device and method of manufacturing the same
Grant 8,415,753 - Nakagawa , et al. April 9, 2
2013-04-09
Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film
Grant 8,288,234 - Seino , et al. October 16, 2
2012-10-16
SiGe photodiode
Grant 8,269,303 - Fujikata , et al. September 18, 2
2012-09-18
Semiconductor Device And Method Of Manufacturing The Same
App 20120199919 - Nakagawa; Takashi ;   et al.
2012-08-09
Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric
Grant 8,203,176 - Nakagawa , et al. June 19, 2
2012-06-19
Dielectric film with hafnium aluminum oxynitride film
Grant 8,178,934 - Kitano , et al. May 15, 2
2012-05-15
Semiconductor Device And Method Of Manufacturing The Same
App 20120043617 - Nakagawa; Takashi ;   et al.
2012-02-23
Methods For Manufacturing Dielectric Films
App 20120021612 - Nakagawa; Takashi ;   et al.
2012-01-26
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen
Grant 8,053,311 - Nakagawa , et al. November 8, 2
2011-11-08
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen
Grant 8,030,694 - Nakagawa , et al. October 4, 2
2011-10-04
Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer
Grant 7,968,463 - Nakagawa , et al. June 28, 2
2011-06-28
Dielectric Film With Metallic Oxynitride
App 20110064642 - Kitano; Naomu ;   et al.
2011-03-17
Dielectric Film, Method Of Manufacutring Semiconductor Device Using Dielectric Film, And Semiconductor Manufacturing Apparatus
App 20110027979 - Seino; Takuya ;   et al.
2011-02-03
SiGe PHOTODIODE
App 20110012221 - Fujikata; Junichi ;   et al.
2011-01-20
Method of manufacturing dielectric film that has hafnium-containing and aluminum-containing oxynitride
Grant 7,867,847 - Kitano , et al. January 11, 2
2011-01-11
Dielectric Film And Semiconductor Device Using Dielectric Film
App 20100330813 - Nakagawa; Takashi ;   et al.
2010-12-30
Dielectric, Capacitor Using Dielectric, Semiconductor Device Using Dielectric, And Manufacturing Method Of Dielectric
App 20100320520 - Nakagawa; Takashi ;   et al.
2010-12-23
Dielectric Film And Semiconductor Device Using Dielectric Film
App 20100244192 - Nakagawa; Takashi ;   et al.
2010-09-30
Method Of Manufacturing Dielectric Film
App 20100221885 - Kitano; Naomu ;   et al.
2010-09-02
Semiconductor device and method for manufacturing same
Grant 7,701,018 - Yamagami , et al. April 20, 2
2010-04-20
Semiconductor device manufacturing method and semiconductor device
App 20100084713 - Nakagawa; Takashi ;   et al.
2010-04-08
Semiconductor device, production method and production device thereof
Grant 7,679,148 - Watanabe , et al. March 16, 2
2010-03-16
Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same
Grant 7,612,416 - Takeuchi , et al. November 3, 2
2009-11-03
Semiconductor device with silicide-containing gate electrode and method of fabricating the same
Grant 7,592,674 - Takahashi , et al. September 22, 2
2009-09-22
Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer
App 20090170252 - Nakagawa; Takashi ;   et al.
2009-07-02
Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film
Grant 7,476,916 - Tatsumi , et al. January 13, 2
2009-01-13
Semiconductor Device and Method for Manufacturing Same
App 20080251849 - Yamagami; Shigeharu ;   et al.
2008-10-16
Apparatus for Forming Thin Film
App 20080134976 - Shinriki; Hiroshi ;   et al.
2008-06-12
Method for forming thin film and apparatus for forming thin film
Grant 7,354,622 - Shinriki , et al. April 8, 2
2008-04-08
Semiconductor device having fin-type effect transistor
App 20070187682 - Takeuchi; Kiyoshi ;   et al.
2007-08-16
Semiconductor device and method of fabricating the same
App 20070138580 - Takahashi; Kensuke ;   et al.
2007-06-21
Semiconductor device and method for producing the same
App 20070132009 - Takeuchi; Kiyoshi ;   et al.
2007-06-14
Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film
App 20070096104 - Tatsumi; Toru ;   et al.
2007-05-03
Semiconductor device and manufacturing process therefor
App 20070075372 - Terashima; Koichi ;   et al.
2007-04-05
Semiconductor device, production method and production device thereof
App 20050233526 - Watanabe, Heiji ;   et al.
2005-10-20
Process for producing a semiconductor device
Grant 6,790,741 - Tatsumi September 14, 2
2004-09-14
Vapor growth method for metal oxide dielectric film and pzt film
App 20040058492 - Tatsumi, Toru
2004-03-25
Rear-projection screen and rear-projection image display
Grant 6,665,118 - Yamaguchi , et al. December 16, 2
2003-12-16
Vapor phase deposition method for metal oxide dielectric film
App 20030175425 - Tatsumi, Toru
2003-09-18
Method for forming thin film and appatus for forming thin film
App 20030170388 - Shinriki, Hiroshi ;   et al.
2003-09-11
Semiconductor device including a MIS transistor
Grant 6,459,126 - Mogami , et al. October 1, 2
2002-10-01
Semiconductor device including a MIS transistor
App 20020096721 - Mogami, Tohru ;   et al.
2002-07-25
Rear-projection screen and rear-projection image display
App 20020080483 - Yamaguchi, Hiroshi ;   et al.
2002-06-27
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device
Grant 6,372,628 - Matsubara , et al. April 16, 2
2002-04-16
Metal oxide dielectric film
App 20020025453 - Tatsumi, Toru
2002-02-28
Semiconductor manufacturing method
Grant 6,180,531 - Matsumoto , et al. January 30, 2
2001-01-30
Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer
Grant 6,121,120 - Wakabayashi , et al. September 19, 2
2000-09-19
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film
Grant 6,091,081 - Matsubara , et al. July 18, 2
2000-07-18
Monocrystalline semiconductor photodetector
Grant 6,075,253 - Sugiyama , et al. June 13, 2
2000-06-13
Method for forming amorphous carbon thin film by plasma chemical vapor deposition
Grant 6,071,797 - Endo , et al. June 6, 2
2000-06-06
Vapor phase growth method
Grant 6,060,391 - Tatsumi May 9, 2
2000-05-09
Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si
Grant 6,030,894 - Hada , et al. February 29, 2
2000-02-29
Process for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layer
Grant 5,946,570 - Kasai , et al. August 31, 1
1999-08-31
Semiconductor device and fabrication process thereof
Grant 5,895,948 - Mori , et al. April 20, 1
1999-04-20
Semiconductor device and manufacturing method of the same
Grant 5,866,920 - Matsumoto , et al. February 2, 1
1999-02-02
Method for fabricating polycrystalline silicon having micro roughness on the surface
Grant 5,691,249 - Watanabe , et al. November 25, 1
1997-11-25
Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain
Grant 5,623,243 - Watanabe , et al. April 22, 1
1997-04-22
Method of manufacturing a semiconducter device capable of easily forming metal silicide films on source and drain regions
Grant 5,571,735 - Mogami , et al. November 5, 1
1996-11-05
Thin film deposition method for wafer
Grant 5,441,012 - Aketagawa , et al. August 15, 1
1995-08-15
Method of manufacturing polysilicon film including recrystallization of an amorphous film
Grant 5,385,863 - Tatsumi , et al. January 31, 1
1995-01-31
Method for fabricating polycrystalline silicon having micro roughness on the surface
Grant 5,366,917 - Watanabe , et al. November 22, 1
1994-11-22
Thin film deposition method
Grant 5,234,862 - Aketagawa , et al. August 10, 1
1993-08-10

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