loadpatents
name:-0.014823913574219
name:-0.011960983276367
name:-0.0035078525543213
TAO; Xianzhi Patent Filings

TAO; Xianzhi

Patent Applications and Registrations

Patent applications and USPTO patent grants for TAO; Xianzhi.The latest application filed is for "structure & material engineering methods for optoelectronic devices signal to noise ratio enhancement".

Company Profile
0.11.10
  • TAO; Xianzhi - San Jose CA
  • Tao, Xianzhi - Palo Alto CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Structure & Material Engineering Methods For Optoelectronic Devices Signal To Noise Ratio Enhancement
App 20210265416 - CHEN; Papo ;   et al.
2021-08-26
CVD apparatus for improved film thickness non-uniformity and particle performance
Grant 9,312,154 - Tran , et al. April 12, 2
2016-04-12
Method of forming high growth rate, low resistivity germanium film on silicon substrate
Grant 8,822,312 - Huang , et al. September 2, 2
2014-09-02
Method of forming high growth rate, low resistivity germanium film on silicon substrate
Grant 8,759,201 - Huang , et al. June 24, 2
2014-06-24
Method Of Forming High Growth Rate, Low Resistivity Germanium Film On Silicon Substrate
App 20120306055 - Huang; Yi-Chiau ;   et al.
2012-12-06
Method Of Forming High Growth Rate, Low Resistivity Germanium Film On Silicon Substrate
App 20120306054 - Huang; Yi-Chiau ;   et al.
2012-12-06
Cvd Apparatus For Improved Film Thickness Non-uniformity And Particle Performance
App 20100294199 - TRAN; BINH ;   et al.
2010-11-25
Method of forming a controlled and uniform lightly phosphorous doped silicon film
Grant 7,335,266 - Fu , et al. February 26, 2
2008-02-26
Method of forming a controlled and uniform lightly phosphorous doped silicon film
Grant 6,982,214 - Fu , et al. January 3, 2
2006-01-03
Method of forming a controlled and uniform lightly phosphorous doped silicon film
App 20040063301 - Fu, Li ;   et al.
2004-04-01
Seedless method of forming a silicon germanium layer on a gate dielectric layer
App 20040009680 - Luo, Lee ;   et al.
2004-01-15
Silicon deposition process in resistively heated single wafer chamber
App 20030207547 - Wang, Shulin ;   et al.
2003-11-06
Emissivity-change-free pumping plate kit in a single wafer chamber
Grant 6,582,522 - Luo , et al. June 24, 2
2003-06-24
Method of forming a silicon nitride layer on a substrate
Grant 6,559,074 - Chen , et al. May 6, 2
2003-05-06
Doped Silicon Deposition Process In Resistively Heated Single Wafer Chamber
App 20020173127 - Wang, Shulin ;   et al.
2002-11-21
CVD ruthenium seed for CVD ruthenium deposition
Grant 6,479,100 - Jin , et al. November 12, 2
2002-11-12
Cvd Ruthenium Seed For Cvd Ruthenium Deposition
App 20020146513 - Jin, Xiaoliang ;   et al.
2002-10-10
Emissivity-change-free pumping plate kit in a single wafer chamber
App 20020137312 - Luo, Lee ;   et al.
2002-09-26

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