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name:-0.055624008178711
name:-0.00060415267944336
Tanizaki; Hiroaki Patent Filings

Tanizaki; Hiroaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tanizaki; Hiroaki.The latest application filed is for "negative material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the negative material".

Company Profile
0.51.54
  • Tanizaki; Hiroaki - Zama JP
  • Tanizaki; Hiroaki - Miyagi JP
  • Tanizaki; Hiroaki - Yokohama JP
  • TANIZAKI; Hiroaki - Zama-Shi JP
  • TANIZAKI; Hiroaki - Yokohama-shi JP
  • Tanizaki; Hiroaki - Itami JP
  • Tanizaki; Hiroaki - Kanagawa JP
  • Tanizaki; Hiroaki - Tokyo JP
  • TANIZAKI; Hiroaki - Itami-shi JP
  • Tanizaki; Hiroaki - Hyogo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Test method for secondary battery
Grant 10,107,863 - Kurihara , et al. October 23, 2
2018-10-23
Negative Material For Nonaqueous Electrolyte Secondary Battery And Nonaqueous Electrolyte Secondary Battery Using The Negative Material
App 20180226638 - Omaru; Atsuo ;   et al.
2018-08-09
Mixed electrode for nonaqueous electrolyte battery, and manufacturing method for the same
Grant 10,026,953 - Tanjo , et al. July 17, 2
2018-07-17
Negative material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the negative material
Grant 9,972,831 - Omaru , et al. May 15, 2
2018-05-15
Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary battery
Grant 9,843,033 - Kaseda , et al. December 12, 2
2017-12-12
Non-aqueous electrolyte secondary battery
Grant 9,819,050 - Saito , et al. November 14, 2
2017-11-14
Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary battery
Grant 9,537,148 - Kaseda , et al. January 3, 2
2017-01-03
Negative Material for Nonaqueous Electrolyte Secondary Battery and Nonaqueous Electrolyte Secondary Battery Using Negative Material
App 20160351895 - Omaru; Atsuo ;   et al.
2016-12-01
Nonaqueous Electrolyte Secondary Battery
App 20160285100 - TANIZAKI; Hiroaki ;   et al.
2016-09-29
Negative material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the negative material
Grant 9,450,245 - Omaru , et al. September 20, 2
2016-09-20
Mixed Electrode For Nonaqueous Electrolyte Battery, And Manufacturing Method For The Same
App 20160197339 - TANJO; Yuji ;   et al.
2016-07-07
Test Method For Secondary Battery
App 20160161564 - KURIHARA; Junko ;   et al.
2016-06-09
Non-aqueous Electrolyte Secondary Battery
App 20160093913 - SAITO; Haruyuki ;   et al.
2016-03-31
Positive Electrode Active Substance, Positive Electrode Material, Positive Electrode, And Non-aqueous Electrolyte Secondary Battery
App 20160013471 - KASEDA; Manabu ;   et al.
2016-01-14
Positive Electrode Active Substance, Positive Electrode Material, Positive Electrode, And Non-aqueous Electrolyte Secondary Battery
App 20160006031 - KASEDA; Manabu ;   et al.
2016-01-07
Negative electrode for lithium ion secondary battery and battery using same
Grant 8,927,149 - Ohara , et al. January 6, 2
2015-01-06
Semiconductor device
Grant 8,508,986 - Tanizaki , et al. August 13, 2
2013-08-13
Anode material and battery using the same
Grant 8,507,134 - Nishino , et al. August 13, 2
2013-08-13
Semiconductor Device
App 20130100739 - TANIZAKI; Hiroaki ;   et al.
2013-04-25
Semiconductor device
Grant 8,339,850 - Tanizaki , et al. December 25, 2
2012-12-25
Semiconductor Device
App 20120075921 - Tanizaki; Hiroaki ;   et al.
2012-03-29
Negative Electrode For Lithium Ion Secondary Battery And Battery Using Same
App 20120070736 - Ohara; Kenji ;   et al.
2012-03-22
Magnetic memory device
Grant 8,139,402 - Tanizaki , et al. March 20, 2
2012-03-20
Lithium-ion capacitor
Grant 7,848,081 - Tanizaki , et al. December 7, 2
2010-12-07
Semiconductor Device
App 20100290292 - TANIZAKI; Hiroaki ;   et al.
2010-11-18
Magnetic Memory Device
App 20090174016 - Tanizaki; Hiroaki ;   et al.
2009-07-09
Nonvolatile Semiconductor Memory Device
App 20080316798 - TANIZAKI; Hiroaki ;   et al.
2008-12-25
Nonvolatile semiconductor memory device
Grant 7,436,699 - Tanizaki , et al. October 14, 2
2008-10-14
Nonvolatile semiconductor memory device
Grant 7,423,898 - Tanizaki , et al. September 9, 2
2008-09-09
Non-volatile memory device having toggle cell
Grant 7,369,429 - Tanizaki May 6, 2
2008-05-06
Lithium-ion Capacitor
App 20080094778 - Tanizaki; Hiroaki ;   et al.
2008-04-24
Anode material and battery using the same
Grant 7,309,545 - Tanizaki , et al. December 18, 2
2007-12-18
Thin film magnetic memory device reducing a charging time of a data line in a data read operation
Grant 7,295,465 - Tanizaki , et al. November 13, 2
2007-11-13
Nonvolatile semiconductor memory device
App 20070159870 - Tanizaki; Hiroaki ;   et al.
2007-07-12
Thin film magnetic memory device provided with a dummy cell for data read reference
Grant 7,233,537 - Tanizaki , et al. June 19, 2
2007-06-19
Non-aqueous electrolyte battery
Grant 7,125,630 - Tanizaki , et al. October 24, 2
2006-10-24
Non-volatile memory device having toggle cell
App 20060233018 - Tanizaki; Hiroaki
2006-10-19
Nonvolatile semiconductor memory device
App 20060209585 - Tanizaki; Hiroaki ;   et al.
2006-09-21
Thin film magnetic memory device reducing a charging time of a data line in a data read operation
App 20060152971 - Tanizaki; Hiroaki ;   et al.
2006-07-13
Semiconductor integrated circuit device and semiconductor memory device reprogrammable after assembly
Grant 7,050,349 - Tanizaki May 23, 2
2006-05-23
Material for positive electrode and secondary battery
Grant 7,045,251 - Tsujimoto , et al. May 16, 2
2006-05-16
Negative electrode material, process for producing the same and cell
App 20050250008 - Mizutani, Satoshi ;   et al.
2005-11-10
Semiconductor memory device having a plurality of signal lines for writing and reading data
Grant 6,940,767 - Ooishi , et al. September 6, 2
2005-09-06
Material for positive electrode and secondary battery
App 20050191551 - Tsujimoto, Hisashi ;   et al.
2005-09-01
Semiconductor integrated circuit device with internal power supply potential generation circuit
Grant 6,885,235 - Tomishima , et al. April 26, 2
2005-04-26
Material for positive electrode and secondary battery
Grant 6,884,543 - Tsujimoto , et al. April 26, 2
2005-04-26
Thin film magnetic memory device having dummy cell
Grant 6,856,537 - Tanizaki , et al. February 15, 2
2005-02-15
Thin film magnetic memory device reducing a charging time of a data line in a data read operation
App 20050024935 - Tanizaki, Hiroaki ;   et al.
2005-02-03
Thin film magnetic memory device executing self-reference type data read
Grant 6,842,366 - Tanizaki , et al. January 11, 2
2005-01-11
Negative electrode active material, method of producing the same, and nonaqueous electrolyte cell
Grant 6,835,226 - Nishino , et al. December 28, 2
2004-12-28
Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like
Grant 6,791,876 - Tanizaki , et al. September 14, 2
2004-09-14
Thin film magnetic memory device reducing a charging time of a data line in a data read operation
Grant 6,788,569 - Tanizaki , et al. September 7, 2
2004-09-07
Non-volatile memory device capable of generating accurate reference current for determination
Grant 6,781,873 - Ishikawa , et al. August 24, 2
2004-08-24
Pipeline nonvolatile memory device with multi-bit parallel read and write suitable for cache memory.
Grant 6,778,445 - Ooishi , et al. August 17, 2
2004-08-17
Nonvolatile memory device with sense amplifier securing reading margin
Grant 6,762,953 - Tanizaki , et al. July 13, 2
2004-07-13
Anode material and battery using the same
App 20040131938 - Nishino, Takatomo ;   et al.
2004-07-08
Nonvolatile Memory Device With Sense Amplifier Securing Reading Margin
App 20040095825 - Tanizaki, Hiroaki ;   et al.
2004-05-20
Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements
Grant 6,738,285 - Tanizaki , et al. May 18, 2
2004-05-18
Negative electrode active material, method of producing the same, and nonaqueous electrolyte cell
App 20040091775 - Nishino, Takatomo ;   et al.
2004-05-13
Semiconductor memory device capable of rewriting data signal
Grant 6,728,122 - Tanizaki , et al. April 27, 2
2004-04-27
Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like
App 20040071014 - Tanizaki, Hiroaki ;   et al.
2004-04-15
Anode material and battery using the same
App 20040053131 - Tanizaki, Hiroaki ;   et al.
2004-03-18
Memory system capable of switching between a reference voltage for normal operation and a reference voltage for burn-in test
Grant 6,707,737 - Tanizaki March 16, 2
2004-03-16
Non-volatile memory device capable of generating accurate reference current for determination
App 20040047216 - Ishikawa, Masatoshi ;   et al.
2004-03-11
Thin film magnetic memory device executing self-reference type data read
App 20040047179 - Tanizaki, Hiroaki ;   et al.
2004-03-11
Non-aqueous electrolyte battery
App 20040029012 - Tanizaki, Hiroaki ;   et al.
2004-02-12
Nonvolatile memory device suitable for cache memory
App 20040027908 - Ooishi, Tsukasa ;   et al.
2004-02-12
Non-aqueous electrolyte secondary battery
App 20040023116 - Fujino, Takemasa ;   et al.
2004-02-05
Memory System
App 20040012996 - Tanizaki, Hiroaki
2004-01-22
Methods of manufacturing negative material and secondary battery
Grant 6,679,925 - Tanizaki , et al. January 20, 2
2004-01-20
Non-aqueous electrolyte secondary cell
Grant 6,677,080 - Tanizaki , et al. January 13, 2
2004-01-13
Thin film magnetic memory device having dummy cell
App 20030223268 - Tanizaki, Hiroaki ;   et al.
2003-12-04
Thin film magnetic memory device reducing a charging time of a data line in a data read operation
App 20030198081 - Tanizaki, Hiroaki ;   et al.
2003-10-23
Thin film magnetic memory device provided with a dummy cell for data read reference
App 20030189853 - Tanizaki, Hiroaki ;   et al.
2003-10-09
Negative electrode for non-aqueous electrolyte secondary cell, and non-aqueous electrolyte secondary cell using the negative electrode
App 20030148184 - Omaru, Atsuo ;   et al.
2003-08-07
Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage
Grant 6,603,685 - Hidaka , et al. August 5, 2
2003-08-05
Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements
App 20030142540 - Tanizaki, Hiroaki ;   et al.
2003-07-31
Semiconductor device having MOS transistor for coupling two signal lines
Grant 6,597,040 - Tanizaki , et al. July 22, 2
2003-07-22
Semiconductor memory device capable of rewriting data signal
App 20030058727 - Tanizaki, Hiroaki ;   et al.
2003-03-27
Semiconductor memory device having a plurality of signal lines for writing and reading data
App 20030048680 - Ooishi, Tsukasa ;   et al.
2003-03-13
Semiconductor integrated circuit device with internal power supply potential generation circuit
App 20030007296 - Tomishima, Shigeki ;   et al.
2003-01-09
Semiconductor integrated circuit device and semiconductor memory device reprogrammable after assembly
App 20020196681 - Tanizaki, Hiroaki
2002-12-26
Semiconductor memory device having a column select line transmitting a column select signal
Grant 6,466,509 - Tanizaki , et al. October 15, 2
2002-10-15
Read amplifier circuit for high-speed reading and semiconductor memory device employing the read amplifier circuit
Grant 6,445,633 - Takahashi , et al. September 3, 2
2002-09-03
Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof
App 20020110016 - Ooishi, Tsukasa ;   et al.
2002-08-15
Non-aqueous electrolyte secondary cell
App 20020076612 - Tanizaki, Hiroaki ;   et al.
2002-06-20
Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall
Grant 6,400,632 - Tanizaki , et al. June 4, 2
2002-06-04
Synchronous semiconductor integrated circuit device capable of test time reduction
Grant 6,385,125 - Ooishi , et al. May 7, 2
2002-05-07
Synchronous Semiconductor Integrated Circuit Device Capable Of Test Time Reduction
App 20020051404 - OOISHI, TSUKASA ;   et al.
2002-05-02
Semiconductor Device Including A Fuse Circuit In Which The Electric Current Is Cut Off After Blowing So As To Prevent Voltage Fall
App 20020051399 - Tanizaki, Hiroaki ;   et al.
2002-05-02
Material for positive electrode and secondary battery
App 20020012842 - Tsujimoto, Hisashi ;   et al.
2002-01-31
Semiconductor device having MOS transistor for coupling two signal lines
App 20020003263 - Tanizaki, Hiroaki ;   et al.
2002-01-10
Semiconductor Device Having Hierarchical Power Supply Line Structure Improved In Operating Speed
App 20020000873 - TANIZAKI, HIROAKI ;   et al.
2002-01-03
Semiconductor memory device with readily changeable memory capacity
Grant 6,333,869 - Tanizaki , et al. December 25, 2
2001-12-25
Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof
App 20010052599 - Ooishi, Tsukasa ;   et al.
2001-12-20
Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage
App 20010053099 - Hidaka, Hideto ;   et al.
2001-12-20
Semiconductor memory device having reduced current consumption at internal boosted potential
App 20010053098 - Tanizaki, Hiroaki
2001-12-20
Read amplifier circuit for high-speed reading and semiconductor memory device employing the read amplifier circuit
App 20010045574 - Takahashi, Mitsue ;   et al.
2001-11-29
Methods of producing negative electrode material, negative electrode, and non-aqueous electrolyte battery
App 20010032386 - Yamada, Shinichiro ;   et al.
2001-10-25
Semiconductor device capable of operating fast with a low voltage and reducing power consumption during standby
Grant 6,288,573 - Tanizaki , et al. September 11, 2
2001-09-11
Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation
Grant 6,055,206 - Tanizaki , et al. April 25, 2
2000-04-25

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