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Test method for secondary battery Grant 10,107,863 - Kurihara , et al. October 23, 2 | 2018-10-23 |
Negative Material For Nonaqueous Electrolyte Secondary Battery And Nonaqueous Electrolyte Secondary Battery Using The Negative Material App 20180226638 - Omaru; Atsuo ;   et al. | 2018-08-09 |
Mixed electrode for nonaqueous electrolyte battery, and manufacturing method for the same Grant 10,026,953 - Tanjo , et al. July 17, 2 | 2018-07-17 |
Negative material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the negative material Grant 9,972,831 - Omaru , et al. May 15, 2 | 2018-05-15 |
Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary battery Grant 9,843,033 - Kaseda , et al. December 12, 2 | 2017-12-12 |
Non-aqueous electrolyte secondary battery Grant 9,819,050 - Saito , et al. November 14, 2 | 2017-11-14 |
Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary battery Grant 9,537,148 - Kaseda , et al. January 3, 2 | 2017-01-03 |
Negative Material for Nonaqueous Electrolyte Secondary Battery and Nonaqueous Electrolyte Secondary Battery Using Negative Material App 20160351895 - Omaru; Atsuo ;   et al. | 2016-12-01 |
Nonaqueous Electrolyte Secondary Battery App 20160285100 - TANIZAKI; Hiroaki ;   et al. | 2016-09-29 |
Negative material for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the negative material Grant 9,450,245 - Omaru , et al. September 20, 2 | 2016-09-20 |
Mixed Electrode For Nonaqueous Electrolyte Battery, And Manufacturing Method For The Same App 20160197339 - TANJO; Yuji ;   et al. | 2016-07-07 |
Test Method For Secondary Battery App 20160161564 - KURIHARA; Junko ;   et al. | 2016-06-09 |
Non-aqueous Electrolyte Secondary Battery App 20160093913 - SAITO; Haruyuki ;   et al. | 2016-03-31 |
Positive Electrode Active Substance, Positive Electrode Material, Positive Electrode, And Non-aqueous Electrolyte Secondary Battery App 20160013471 - KASEDA; Manabu ;   et al. | 2016-01-14 |
Positive Electrode Active Substance, Positive Electrode Material, Positive Electrode, And Non-aqueous Electrolyte Secondary Battery App 20160006031 - KASEDA; Manabu ;   et al. | 2016-01-07 |
Negative electrode for lithium ion secondary battery and battery using same Grant 8,927,149 - Ohara , et al. January 6, 2 | 2015-01-06 |
Semiconductor device Grant 8,508,986 - Tanizaki , et al. August 13, 2 | 2013-08-13 |
Anode material and battery using the same Grant 8,507,134 - Nishino , et al. August 13, 2 | 2013-08-13 |
Semiconductor Device App 20130100739 - TANIZAKI; Hiroaki ;   et al. | 2013-04-25 |
Semiconductor device Grant 8,339,850 - Tanizaki , et al. December 25, 2 | 2012-12-25 |
Semiconductor Device App 20120075921 - Tanizaki; Hiroaki ;   et al. | 2012-03-29 |
Negative Electrode For Lithium Ion Secondary Battery And Battery Using Same App 20120070736 - Ohara; Kenji ;   et al. | 2012-03-22 |
Magnetic memory device Grant 8,139,402 - Tanizaki , et al. March 20, 2 | 2012-03-20 |
Lithium-ion capacitor Grant 7,848,081 - Tanizaki , et al. December 7, 2 | 2010-12-07 |
Semiconductor Device App 20100290292 - TANIZAKI; Hiroaki ;   et al. | 2010-11-18 |
Magnetic Memory Device App 20090174016 - Tanizaki; Hiroaki ;   et al. | 2009-07-09 |
Nonvolatile Semiconductor Memory Device App 20080316798 - TANIZAKI; Hiroaki ;   et al. | 2008-12-25 |
Nonvolatile semiconductor memory device Grant 7,436,699 - Tanizaki , et al. October 14, 2 | 2008-10-14 |
Nonvolatile semiconductor memory device Grant 7,423,898 - Tanizaki , et al. September 9, 2 | 2008-09-09 |
Non-volatile memory device having toggle cell Grant 7,369,429 - Tanizaki May 6, 2 | 2008-05-06 |
Lithium-ion Capacitor App 20080094778 - Tanizaki; Hiroaki ;   et al. | 2008-04-24 |
Anode material and battery using the same Grant 7,309,545 - Tanizaki , et al. December 18, 2 | 2007-12-18 |
Thin film magnetic memory device reducing a charging time of a data line in a data read operation Grant 7,295,465 - Tanizaki , et al. November 13, 2 | 2007-11-13 |
Nonvolatile semiconductor memory device App 20070159870 - Tanizaki; Hiroaki ;   et al. | 2007-07-12 |
Thin film magnetic memory device provided with a dummy cell for data read reference Grant 7,233,537 - Tanizaki , et al. June 19, 2 | 2007-06-19 |
Non-aqueous electrolyte battery Grant 7,125,630 - Tanizaki , et al. October 24, 2 | 2006-10-24 |
Non-volatile memory device having toggle cell App 20060233018 - Tanizaki; Hiroaki | 2006-10-19 |
Nonvolatile semiconductor memory device App 20060209585 - Tanizaki; Hiroaki ;   et al. | 2006-09-21 |
Thin film magnetic memory device reducing a charging time of a data line in a data read operation App 20060152971 - Tanizaki; Hiroaki ;   et al. | 2006-07-13 |
Semiconductor integrated circuit device and semiconductor memory device reprogrammable after assembly Grant 7,050,349 - Tanizaki May 23, 2 | 2006-05-23 |
Material for positive electrode and secondary battery Grant 7,045,251 - Tsujimoto , et al. May 16, 2 | 2006-05-16 |
Negative electrode material, process for producing the same and cell App 20050250008 - Mizutani, Satoshi ;   et al. | 2005-11-10 |
Semiconductor memory device having a plurality of signal lines for writing and reading data Grant 6,940,767 - Ooishi , et al. September 6, 2 | 2005-09-06 |
Material for positive electrode and secondary battery App 20050191551 - Tsujimoto, Hisashi ;   et al. | 2005-09-01 |
Semiconductor integrated circuit device with internal power supply potential generation circuit Grant 6,885,235 - Tomishima , et al. April 26, 2 | 2005-04-26 |
Material for positive electrode and secondary battery Grant 6,884,543 - Tsujimoto , et al. April 26, 2 | 2005-04-26 |
Thin film magnetic memory device having dummy cell Grant 6,856,537 - Tanizaki , et al. February 15, 2 | 2005-02-15 |
Thin film magnetic memory device reducing a charging time of a data line in a data read operation App 20050024935 - Tanizaki, Hiroaki ;   et al. | 2005-02-03 |
Thin film magnetic memory device executing self-reference type data read Grant 6,842,366 - Tanizaki , et al. January 11, 2 | 2005-01-11 |
Negative electrode active material, method of producing the same, and nonaqueous electrolyte cell Grant 6,835,226 - Nishino , et al. December 28, 2 | 2004-12-28 |
Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like Grant 6,791,876 - Tanizaki , et al. September 14, 2 | 2004-09-14 |
Thin film magnetic memory device reducing a charging time of a data line in a data read operation Grant 6,788,569 - Tanizaki , et al. September 7, 2 | 2004-09-07 |
Non-volatile memory device capable of generating accurate reference current for determination Grant 6,781,873 - Ishikawa , et al. August 24, 2 | 2004-08-24 |
Pipeline nonvolatile memory device with multi-bit parallel read and write suitable for cache memory. Grant 6,778,445 - Ooishi , et al. August 17, 2 | 2004-08-17 |
Nonvolatile memory device with sense amplifier securing reading margin Grant 6,762,953 - Tanizaki , et al. July 13, 2 | 2004-07-13 |
Anode material and battery using the same App 20040131938 - Nishino, Takatomo ;   et al. | 2004-07-08 |
Nonvolatile Memory Device With Sense Amplifier Securing Reading Margin App 20040095825 - Tanizaki, Hiroaki ;   et al. | 2004-05-20 |
Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements Grant 6,738,285 - Tanizaki , et al. May 18, 2 | 2004-05-18 |
Negative electrode active material, method of producing the same, and nonaqueous electrolyte cell App 20040091775 - Nishino, Takatomo ;   et al. | 2004-05-13 |
Semiconductor memory device capable of rewriting data signal Grant 6,728,122 - Tanizaki , et al. April 27, 2 | 2004-04-27 |
Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like App 20040071014 - Tanizaki, Hiroaki ;   et al. | 2004-04-15 |
Anode material and battery using the same App 20040053131 - Tanizaki, Hiroaki ;   et al. | 2004-03-18 |
Memory system capable of switching between a reference voltage for normal operation and a reference voltage for burn-in test Grant 6,707,737 - Tanizaki March 16, 2 | 2004-03-16 |
Non-volatile memory device capable of generating accurate reference current for determination App 20040047216 - Ishikawa, Masatoshi ;   et al. | 2004-03-11 |
Thin film magnetic memory device executing self-reference type data read App 20040047179 - Tanizaki, Hiroaki ;   et al. | 2004-03-11 |
Non-aqueous electrolyte battery App 20040029012 - Tanizaki, Hiroaki ;   et al. | 2004-02-12 |
Nonvolatile memory device suitable for cache memory App 20040027908 - Ooishi, Tsukasa ;   et al. | 2004-02-12 |
Non-aqueous electrolyte secondary battery App 20040023116 - Fujino, Takemasa ;   et al. | 2004-02-05 |
Memory System App 20040012996 - Tanizaki, Hiroaki | 2004-01-22 |
Methods of manufacturing negative material and secondary battery Grant 6,679,925 - Tanizaki , et al. January 20, 2 | 2004-01-20 |
Non-aqueous electrolyte secondary cell Grant 6,677,080 - Tanizaki , et al. January 13, 2 | 2004-01-13 |
Thin film magnetic memory device having dummy cell App 20030223268 - Tanizaki, Hiroaki ;   et al. | 2003-12-04 |
Thin film magnetic memory device reducing a charging time of a data line in a data read operation App 20030198081 - Tanizaki, Hiroaki ;   et al. | 2003-10-23 |
Thin film magnetic memory device provided with a dummy cell for data read reference App 20030189853 - Tanizaki, Hiroaki ;   et al. | 2003-10-09 |
Negative electrode for non-aqueous electrolyte secondary cell, and non-aqueous electrolyte secondary cell using the negative electrode App 20030148184 - Omaru, Atsuo ;   et al. | 2003-08-07 |
Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage Grant 6,603,685 - Hidaka , et al. August 5, 2 | 2003-08-05 |
Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements App 20030142540 - Tanizaki, Hiroaki ;   et al. | 2003-07-31 |
Semiconductor device having MOS transistor for coupling two signal lines Grant 6,597,040 - Tanizaki , et al. July 22, 2 | 2003-07-22 |
Semiconductor memory device capable of rewriting data signal App 20030058727 - Tanizaki, Hiroaki ;   et al. | 2003-03-27 |
Semiconductor memory device having a plurality of signal lines for writing and reading data App 20030048680 - Ooishi, Tsukasa ;   et al. | 2003-03-13 |
Semiconductor integrated circuit device with internal power supply potential generation circuit App 20030007296 - Tomishima, Shigeki ;   et al. | 2003-01-09 |
Semiconductor integrated circuit device and semiconductor memory device reprogrammable after assembly App 20020196681 - Tanizaki, Hiroaki | 2002-12-26 |
Semiconductor memory device having a column select line transmitting a column select signal Grant 6,466,509 - Tanizaki , et al. October 15, 2 | 2002-10-15 |
Read amplifier circuit for high-speed reading and semiconductor memory device employing the read amplifier circuit Grant 6,445,633 - Takahashi , et al. September 3, 2 | 2002-09-03 |
Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof App 20020110016 - Ooishi, Tsukasa ;   et al. | 2002-08-15 |
Non-aqueous electrolyte secondary cell App 20020076612 - Tanizaki, Hiroaki ;   et al. | 2002-06-20 |
Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall Grant 6,400,632 - Tanizaki , et al. June 4, 2 | 2002-06-04 |
Synchronous semiconductor integrated circuit device capable of test time reduction Grant 6,385,125 - Ooishi , et al. May 7, 2 | 2002-05-07 |
Synchronous Semiconductor Integrated Circuit Device Capable Of Test Time Reduction App 20020051404 - OOISHI, TSUKASA ;   et al. | 2002-05-02 |
Semiconductor Device Including A Fuse Circuit In Which The Electric Current Is Cut Off After Blowing So As To Prevent Voltage Fall App 20020051399 - Tanizaki, Hiroaki ;   et al. | 2002-05-02 |
Material for positive electrode and secondary battery App 20020012842 - Tsujimoto, Hisashi ;   et al. | 2002-01-31 |
Semiconductor device having MOS transistor for coupling two signal lines App 20020003263 - Tanizaki, Hiroaki ;   et al. | 2002-01-10 |
Semiconductor Device Having Hierarchical Power Supply Line Structure Improved In Operating Speed App 20020000873 - TANIZAKI, HIROAKI ;   et al. | 2002-01-03 |
Semiconductor memory device with readily changeable memory capacity Grant 6,333,869 - Tanizaki , et al. December 25, 2 | 2001-12-25 |
Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof App 20010052599 - Ooishi, Tsukasa ;   et al. | 2001-12-20 |
Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage App 20010053099 - Hidaka, Hideto ;   et al. | 2001-12-20 |
Semiconductor memory device having reduced current consumption at internal boosted potential App 20010053098 - Tanizaki, Hiroaki | 2001-12-20 |
Read amplifier circuit for high-speed reading and semiconductor memory device employing the read amplifier circuit App 20010045574 - Takahashi, Mitsue ;   et al. | 2001-11-29 |
Methods of producing negative electrode material, negative electrode, and non-aqueous electrolyte battery App 20010032386 - Yamada, Shinichiro ;   et al. | 2001-10-25 |
Semiconductor device capable of operating fast with a low voltage and reducing power consumption during standby Grant 6,288,573 - Tanizaki , et al. September 11, 2 | 2001-09-11 |
Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation Grant 6,055,206 - Tanizaki , et al. April 25, 2 | 2000-04-25 |