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Patent applications and USPTO patent grants for Tani; Yukari.The latest application filed is for "silicon carbide semiconductor device and method for manufacturing the same".
Patent | Date |
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Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same Grant 8,338,833 - Seki , et al. December 25, 2 | 2012-12-25 |
Silicon carbide semiconductor device and method for manufacturing the same Grant 8,053,784 - Seki , et al. November 8, 2 | 2011-11-08 |
Silicon Carbide Semiconductor Device And Method For Manufacturing The Same App 20100224884 - Seki; Akinori ;   et al. | 2010-09-09 |
Method of forming epitaxial SiC using XPS characterization Grant 7,678,671 - Seki , et al. March 16, 2 | 2010-03-16 |
Semiconductor material, production method thereof and semiconductor device App 20070096109 - Seki; Akinori ;   et al. | 2007-05-03 |
Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same App 20070032053 - Seki; Akinori ;   et al. | 2007-02-08 |
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