Patent | Date |
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Semiconductor device and method of making the same Grant 11,348,715 - Jung , et al. May 31, 2 | 2022-05-31 |
Oxide interlayers containing glass-forming agents Grant 11,251,366 - Ikhtiar , et al. February 15, 2 | 2022-02-15 |
Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s) Grant 11,063,209 - Tang , et al. July 13, 2 | 2021-07-13 |
Oxide Interlayers Containing Glass-forming Agents App 20210159402 - Ikhtiar; ;   et al. | 2021-05-27 |
Hybrid oxide/metal cap layer for boron-free free layer Grant 11,009,570 - Ikhtiar , et al. May 18, 2 | 2021-05-18 |
Semiconductor Device And Method Of Making The Same App 20200388425 - Jung; Hong Sik ;   et al. | 2020-12-10 |
Hybrid Oxide/metal Cap Layer For Boron-free Free Layer App 20200158796 - Ikhtiar; ;   et al. | 2020-05-21 |
Method and system for providing magnetic junctions utilizing metal oxide layer(s) Grant 10,553,642 - Lee , et al. Fe | 2020-02-04 |
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Grant 10,446,209 - Watts , et al. Oc | 2019-10-15 |
Method and system for providing a magnetic junction having a low damping hybrid free layer Grant 10,439,133 - Apalkov , et al. O | 2019-10-08 |
Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer Grant 10,438,638 - Tang , et al. O | 2019-10-08 |
Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers Grant 10,431,275 - Jung , et al. O | 2019-10-01 |
Method And System For Providing Magnetic Junctions Having Hybrid Oxide And Noble Metal Capping Layers App 20190272863 - Jung; Hong-Sik ;   et al. | 2019-09-05 |
Method And System For Providing A Boron-free Magnetic Layer In Perpendicular Magnetic Junctions App 20190157547 - Ikhtiar; ;   et al. | 2019-05-23 |
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions Grant 10,283,701 - Ikhtiar , et al. | 2019-05-07 |
Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer Grant 10,276,225 - Tang , et al. | 2019-04-30 |
Method And System For Providing Magnetic Junctions Utilizing Metal Oxide Layer(s) App 20190067366 - Lee; Don Koun ;   et al. | 2019-02-28 |
Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions Grant 10,164,175 - Krounbi , et al. Dec | 2018-12-25 |
Method And System For Providing Magnetic Junctions Utilizing Oxygen Blocking, Oxygen Adsorber And Tuning Layer(s) App 20180351086 - Tang; Xueti ;   et al. | 2018-12-06 |
Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque Grant 10,121,961 - Apalkov , et al. November 6, 2 | 2018-11-06 |
Method And System For Providing A Magnetic Junction Having A Low Damping Hybrid Free Layer App 20180261762 - Apalkov; Dmytro ;   et al. | 2018-09-13 |
Method And System For Providing A Magnetic Layer In A Magnetic Junction Usable In Spin Transfer Or Spin Orbit Torque Applications Using A Sacrificial Oxide Layer App 20180247684 - Tang; Xueti ;   et al. | 2018-08-30 |
Magnetic Devices Including Magnetic Junctions Having Tilted Easy Axes And Enhanced Damping Programmable Using Spin Orbit Torque App 20180219152 - Apalkov; Dmytro ;   et al. | 2018-08-02 |
Method And System For Providing A Magnetic Junction Usable In Spin Transfer Or Spin-orbit Torque Applications And Including A Magnetic Barrier Layer App 20180197589 - Tang; Xueti ;   et al. | 2018-07-12 |
Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer Grant 9,966,528 - Tang , et al. May 8, 2 | 2018-05-08 |
METHOD AND SYSTEM FOR PROVIDING A LOW MOMENT CoFeBMo FREE LAYER MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE APPLICATIONS App 20180102474 - Tang; Xueti ;   et al. | 2018-04-12 |
Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications Grant 9,941,467 - Tang , et al. April 10, 2 | 2018-04-10 |
Method and system for providing a magnetic junction usable in spin transfer torque applications and including a magnetic barrier layer Grant 9,917,249 - Tang , et al. March 13, 2 | 2018-03-13 |
Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applications Grant 9,876,164 - Tang , et al. January 23, 2 | 2018-01-23 |
B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM Grant 9,825,220 - Apalkov , et al. November 21, 2 | 2017-11-21 |
Method and system for providing magnetic junctions using thermally assisted spin transfer torque switching Grant 9,818,931 - Tang , et al. November 14, 2 | 2017-11-14 |
Method for providing a magnetic junction on a substrate and usable in a magnetic device Grant 9,799,382 - Erickson , et al. October 24, 2 | 2017-10-24 |
Method And System For Providing A Magnetic Junction Usable In Spin Transfer Torque Applications And Including A Magnetic Barrier Layer App 20170263859 - Tang; Xueti ;   et al. | 2017-09-14 |
Method And System For Providing A Magnetic Layer In A Magnetic Junction Usable In Spin Transfer Torque Applications Using A Sacrificial Oxide Layer App 20170256702 - Tang; Xueti ;   et al. | 2017-09-07 |
Method And System For Providing A Magnetic Junction Usable In Spin Transfer Torque Applications Using Multiple Stack Depositions App 20170256708 - Krounbi; Mohamad Towfik ;   et al. | 2017-09-07 |
B2-mtj Design With Texture Blocking Decoupling Layer For Sub-25 Nm Stt-mram App 20170141156 - APALKOV; Dmytro ;   et al. | 2017-05-18 |
Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories Grant 9,577,181 - Tang , et al. February 21, 2 | 2017-02-21 |
Method and system for providing magnetic junctions including free layers that are cobalt-free Grant 9,559,143 - Tang , et al. January 31, 2 | 2017-01-31 |
Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer Grant 9,559,296 - Erickson , et al. January 31, 2 | 2017-01-31 |
Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications Grant 9,508,924 - Tang , et al. November 29, 2 | 2016-11-29 |
Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications Grant 9,472,750 - Tang , et al. October 18, 2 | 2016-10-18 |
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Grant 9,412,787 - Watts , et al. August 9, 2 | 2016-08-09 |
Method And System For Providing Magnetic Junctions Including Free Layers That Are Cobalt-free App 20160197119 - Tang; Xueti ;   et al. | 2016-07-07 |
Method And System For Providing A Bottom Pinned Layer In A Perpendicular Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications App 20160197267 - Tang; Xueti ;   et al. | 2016-07-07 |
Method And System For Providing Magnetic Junctions Using Thermally Assisted Spin Transfer Torque Switching App 20160197265 - Tang; Xueti ;   et al. | 2016-07-07 |
Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications Grant 9,373,781 - Tang , et al. June 21, 2 | 2016-06-21 |
Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications Grant 9,306,155 - Tang , et al. April 5, 2 | 2016-04-05 |
METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORY APPLICATIONS AND THE MAGNETIC JUNCTIONS SO FORMED App 20160086645 - Erickson; Dustin William ;   et al. | 2016-03-24 |
Magnetic Junctions Using Asymmetric Free Layers And Suitable For Use In Spin Transfer Torque Memories App 20160035970 - Tang; Xueti ;   et al. | 2016-02-04 |
Method And System For Providing A Thin Pinned Layer In A Perpendicular Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications App 20160005791 - Tang; Xueti ;   et al. | 2016-01-07 |
Method For Providing A Perpendicular Magnetic Anisotropy Magnetic Junction Usable In Spin Transfer Torque Magnetic Devices Using A Sacrificial Insertion Layer App 20160005954 - Erickson; Dustin William ;   et al. | 2016-01-07 |
Method And System For Providing Rare Earth Magnetic Junctions Usable In Spin Transfer Torque Magnetic Random Access Memory Applications App 20160005956 - Tang; Xueti ;   et al. | 2016-01-07 |
Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories Grant 9,184,375 - Tang , et al. November 10, 2 | 2015-11-10 |
Method and system for providing a magnetic junction configured for precessional switching using a bias structure Grant 9,142,758 - Apalkov , et al. September 22, 2 | 2015-09-22 |
Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions Grant 9,130,155 - Chepulskyy , et al. September 8, 2 | 2015-09-08 |
Method And System For Providing A Bulk Perpendicular Magnetic Anisotropy Free Layer In A Perpendicular Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications App 20150129993 - Tang; Xueti ;   et al. | 2015-05-14 |
Method And System For Providing A Top Pinned Layer Perpendicular Magnetic Anisotropy Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications App 20150129996 - Tang; Xueti ;   et al. | 2015-05-14 |
Dual Perpendicular Magnetic Anisotropy Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications App 20150129997 - Tang; Xueti ;   et al. | 2015-05-14 |
Method and system for providing a magnetic junction having an engineered barrier layer Grant 8,987,006 - Moon , et al. March 24, 2 | 2015-03-24 |
Method And System For Providing Magnetic Junctions Using Bcc Cobalt And Suitable For Use In Spin Transfer Torque Memories App 20150041933 - Chepulskyy; Roman ;   et al. | 2015-02-12 |
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Grant 8,913,350 - Watts , et al. December 16, 2 | 2014-12-16 |
Method and system for providing inverted dual magnetic tunneling junction elements Grant 8,891,290 - Tang , et al. November 18, 2 | 2014-11-18 |
Magnetic Junctions Having Insertion Layers And Magnetic Memories Using The Magnetic Junctions App 20140264671 - Chepulskyy; Roman ;   et al. | 2014-09-18 |
Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy Grant 8,786,039 - Apalkov , et al. July 22, 2 | 2014-07-22 |
Magnetic tunneling junction seed, capping, and spacer layer materials Grant 8,779,538 - Chen , et al. July 15, 2 | 2014-07-15 |
Method and system for providing a magnetic junction using half metallic ferromagnets Grant 8,766,383 - Apalkov , et al. July 1, 2 | 2014-07-01 |
Method And System For Providing Magnetic Junctions Having Engineered Perpendicular Magnetic Anisotropy App 20140175582 - Apalkov; Dmytro ;   et al. | 2014-06-26 |
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20140151829 - Watts; Steven M. ;   et al. | 2014-06-05 |
Method and system for providing magnetic junctions having improved characteristics Grant 8,710,602 - Tang , et al. April 29, 2 | 2014-04-29 |
Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Grant 8,704,319 - Tang , et al. April 22, 2 | 2014-04-22 |
Method and system for setting a pinned layer in a magnetic tunneling junction Grant 8,697,484 - Apalkov , et al. April 15, 2 | 2014-04-15 |
Method and system for providing a magnetic tunneling junction using thermally assisted switching Grant 8,698,259 - Krounbi , et al. April 15, 2 | 2014-04-15 |
Method And System For Providing Inverted Dual Magnetic Tunneling Junction Elements App 20140063921 - Tang; Xueti ;   et al. | 2014-03-06 |
Magnetic Tunneling Junction Seed, Capping, And Spacer Layer Materials App 20140008742 - Chen; Eugene Youjun ;   et al. | 2014-01-09 |
Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements Grant 8,546,896 - Lottis , et al. October 1, 2 | 2013-10-01 |
Method And System For Setting A Pinned Layer In A Magnetic Tunneling Junction App 20130154034 - Apalkov; Dmytro ;   et al. | 2013-06-20 |
Method And System For Providing A Magnetic Tunneling Junction Using Thermally Assisted Switching App 20130154035 - Krounbi; Mohamad Towfik ;   et al. | 2013-06-20 |
Method And System For Providing Magnetic Junctions Having Improved Characteristics App 20130154036 - Tang; Xueti ;   et al. | 2013-06-20 |
Method and system for providing multiple logic cells in a single stack Grant 8,446,761 - Apalkov , et al. May 21, 2 | 2013-05-21 |
Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Grant 8,432,009 - Apalkov , et al. April 30, 2 | 2013-04-30 |
Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories Grant 8,422,285 - Apalkov , et al. April 16, 2 | 2013-04-16 |
Method and system for providing a magnetic field aligned spin transfer torque random access memory Grant 8,411,497 - Ong , et al. April 2, 2 | 2013-04-02 |
Method And System For Providing A Magnetic Junction Using Half Metallic Ferromagnets App 20130009260 - Apalkov; Dmytro ;   et al. | 2013-01-10 |
Method And System For Providing A Magnetic Junction Configured For Precessional Switching Using A Bias Structure App 20120319221 - Apalkov; Dmytro ;   et al. | 2012-12-20 |
Method And System For Providing A Magnetic Junction Having An Engineered Barrier Layer App 20120267736 - Moon; Kiseok ;   et al. | 2012-10-25 |
Method And System For Providing Magnetic Layers Having Insertion Layers For Use In Spin Transfer Torque Memories App 20120261776 - Tang; Xueti ;   et al. | 2012-10-18 |
Method And System For Providing Magnetic Layers Having Insertion Layers For Use In Spin Transfer Torque Memories App 20120168885 - Apalkov; Dmytro ;   et al. | 2012-07-05 |
Method And System For Providing Multiple Logic Cells In A Single Stack App 20120170357 - Apalkov; Dmytro ;   et al. | 2012-07-05 |
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20120155156 - Watts; Steven M. ;   et al. | 2012-06-21 |
Method And System For Providing Magnetic Tunneling Junction Elements Having Laminated Free Layers And Memories Using Such Magnetic Elements App 20120012953 - Lottis; Daniel ;   et al. | 2012-01-19 |
Method And System For Providing A Magnetic Magnetic Field Aligned Spin Transfer Torque Random Access Memory App 20110273928 - Ong; Adrian E. ;   et al. | 2011-11-10 |
Method And System For Providing Dual Magnetic Tunneling Junctions Usable In Spin Transfer Torque Magnetic Memories App 20110141804 - Apalkov; Dmytro ;   et al. | 2011-06-16 |
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20110031569 - Watts; Steven M. ;   et al. | 2011-02-10 |
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20110032644 - Watts; Steven M. ;   et al. | 2011-02-10 |