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name:-0.055812120437622
name:-0.058657884597778
name:-0.01432991027832
Tang; Xueti Patent Filings

Tang; Xueti

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tang; Xueti.The latest application filed is for "oxide interlayers containing glass-forming agents".

Company Profile
14.63.54
  • Tang; Xueti - Fremont CA
  • Tang; Xueti - San Jose CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device and method of making the same
Grant 11,348,715 - Jung , et al. May 31, 2
2022-05-31
Oxide interlayers containing glass-forming agents
Grant 11,251,366 - Ikhtiar , et al. February 15, 2
2022-02-15
Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s)
Grant 11,063,209 - Tang , et al. July 13, 2
2021-07-13
Oxide Interlayers Containing Glass-forming Agents
App 20210159402 - Ikhtiar; ;   et al.
2021-05-27
Hybrid oxide/metal cap layer for boron-free free layer
Grant 11,009,570 - Ikhtiar , et al. May 18, 2
2021-05-18
Semiconductor Device And Method Of Making The Same
App 20200388425 - Jung; Hong Sik ;   et al.
2020-12-10
Hybrid Oxide/metal Cap Layer For Boron-free Free Layer
App 20200158796 - Ikhtiar; ;   et al.
2020-05-21
Method and system for providing magnetic junctions utilizing metal oxide layer(s)
Grant 10,553,642 - Lee , et al. Fe
2020-02-04
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
Grant 10,446,209 - Watts , et al. Oc
2019-10-15
Method and system for providing a magnetic junction having a low damping hybrid free layer
Grant 10,439,133 - Apalkov , et al. O
2019-10-08
Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer
Grant 10,438,638 - Tang , et al. O
2019-10-08
Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers
Grant 10,431,275 - Jung , et al. O
2019-10-01
Method And System For Providing Magnetic Junctions Having Hybrid Oxide And Noble Metal Capping Layers
App 20190272863 - Jung; Hong-Sik ;   et al.
2019-09-05
Method And System For Providing A Boron-free Magnetic Layer In Perpendicular Magnetic Junctions
App 20190157547 - Ikhtiar; ;   et al.
2019-05-23
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions
Grant 10,283,701 - Ikhtiar , et al.
2019-05-07
Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer
Grant 10,276,225 - Tang , et al.
2019-04-30
Method And System For Providing Magnetic Junctions Utilizing Metal Oxide Layer(s)
App 20190067366 - Lee; Don Koun ;   et al.
2019-02-28
Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions
Grant 10,164,175 - Krounbi , et al. Dec
2018-12-25
Method And System For Providing Magnetic Junctions Utilizing Oxygen Blocking, Oxygen Adsorber And Tuning Layer(s)
App 20180351086 - Tang; Xueti ;   et al.
2018-12-06
Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque
Grant 10,121,961 - Apalkov , et al. November 6, 2
2018-11-06
Method And System For Providing A Magnetic Junction Having A Low Damping Hybrid Free Layer
App 20180261762 - Apalkov; Dmytro ;   et al.
2018-09-13
Method And System For Providing A Magnetic Layer In A Magnetic Junction Usable In Spin Transfer Or Spin Orbit Torque Applications Using A Sacrificial Oxide Layer
App 20180247684 - Tang; Xueti ;   et al.
2018-08-30
Magnetic Devices Including Magnetic Junctions Having Tilted Easy Axes And Enhanced Damping Programmable Using Spin Orbit Torque
App 20180219152 - Apalkov; Dmytro ;   et al.
2018-08-02
Method And System For Providing A Magnetic Junction Usable In Spin Transfer Or Spin-orbit Torque Applications And Including A Magnetic Barrier Layer
App 20180197589 - Tang; Xueti ;   et al.
2018-07-12
Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer
Grant 9,966,528 - Tang , et al. May 8, 2
2018-05-08
METHOD AND SYSTEM FOR PROVIDING A LOW MOMENT CoFeBMo FREE LAYER MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE APPLICATIONS
App 20180102474 - Tang; Xueti ;   et al.
2018-04-12
Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications
Grant 9,941,467 - Tang , et al. April 10, 2
2018-04-10
Method and system for providing a magnetic junction usable in spin transfer torque applications and including a magnetic barrier layer
Grant 9,917,249 - Tang , et al. March 13, 2
2018-03-13
Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applications
Grant 9,876,164 - Tang , et al. January 23, 2
2018-01-23
B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM
Grant 9,825,220 - Apalkov , et al. November 21, 2
2017-11-21
Method and system for providing magnetic junctions using thermally assisted spin transfer torque switching
Grant 9,818,931 - Tang , et al. November 14, 2
2017-11-14
Method for providing a magnetic junction on a substrate and usable in a magnetic device
Grant 9,799,382 - Erickson , et al. October 24, 2
2017-10-24
Method And System For Providing A Magnetic Junction Usable In Spin Transfer Torque Applications And Including A Magnetic Barrier Layer
App 20170263859 - Tang; Xueti ;   et al.
2017-09-14
Method And System For Providing A Magnetic Layer In A Magnetic Junction Usable In Spin Transfer Torque Applications Using A Sacrificial Oxide Layer
App 20170256702 - Tang; Xueti ;   et al.
2017-09-07
Method And System For Providing A Magnetic Junction Usable In Spin Transfer Torque Applications Using Multiple Stack Depositions
App 20170256708 - Krounbi; Mohamad Towfik ;   et al.
2017-09-07
B2-mtj Design With Texture Blocking Decoupling Layer For Sub-25 Nm Stt-mram
App 20170141156 - APALKOV; Dmytro ;   et al.
2017-05-18
Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
Grant 9,577,181 - Tang , et al. February 21, 2
2017-02-21
Method and system for providing magnetic junctions including free layers that are cobalt-free
Grant 9,559,143 - Tang , et al. January 31, 2
2017-01-31
Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer
Grant 9,559,296 - Erickson , et al. January 31, 2
2017-01-31
Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications
Grant 9,508,924 - Tang , et al. November 29, 2
2016-11-29
Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
Grant 9,472,750 - Tang , et al. October 18, 2
2016-10-18
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
Grant 9,412,787 - Watts , et al. August 9, 2
2016-08-09
Method And System For Providing Magnetic Junctions Including Free Layers That Are Cobalt-free
App 20160197119 - Tang; Xueti ;   et al.
2016-07-07
Method And System For Providing A Bottom Pinned Layer In A Perpendicular Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications
App 20160197267 - Tang; Xueti ;   et al.
2016-07-07
Method And System For Providing Magnetic Junctions Using Thermally Assisted Spin Transfer Torque Switching
App 20160197265 - Tang; Xueti ;   et al.
2016-07-07
Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications
Grant 9,373,781 - Tang , et al. June 21, 2
2016-06-21
Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
Grant 9,306,155 - Tang , et al. April 5, 2
2016-04-05
METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORY APPLICATIONS AND THE MAGNETIC JUNCTIONS SO FORMED
App 20160086645 - Erickson; Dustin William ;   et al.
2016-03-24
Magnetic Junctions Using Asymmetric Free Layers And Suitable For Use In Spin Transfer Torque Memories
App 20160035970 - Tang; Xueti ;   et al.
2016-02-04
Method And System For Providing A Thin Pinned Layer In A Perpendicular Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications
App 20160005791 - Tang; Xueti ;   et al.
2016-01-07
Method For Providing A Perpendicular Magnetic Anisotropy Magnetic Junction Usable In Spin Transfer Torque Magnetic Devices Using A Sacrificial Insertion Layer
App 20160005954 - Erickson; Dustin William ;   et al.
2016-01-07
Method And System For Providing Rare Earth Magnetic Junctions Usable In Spin Transfer Torque Magnetic Random Access Memory Applications
App 20160005956 - Tang; Xueti ;   et al.
2016-01-07
Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
Grant 9,184,375 - Tang , et al. November 10, 2
2015-11-10
Method and system for providing a magnetic junction configured for precessional switching using a bias structure
Grant 9,142,758 - Apalkov , et al. September 22, 2
2015-09-22
Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
Grant 9,130,155 - Chepulskyy , et al. September 8, 2
2015-09-08
Method And System For Providing A Bulk Perpendicular Magnetic Anisotropy Free Layer In A Perpendicular Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications
App 20150129993 - Tang; Xueti ;   et al.
2015-05-14
Method And System For Providing A Top Pinned Layer Perpendicular Magnetic Anisotropy Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications
App 20150129996 - Tang; Xueti ;   et al.
2015-05-14
Dual Perpendicular Magnetic Anisotropy Magnetic Junction Usable In Spin Transfer Torque Magnetic Random Access Memory Applications
App 20150129997 - Tang; Xueti ;   et al.
2015-05-14
Method and system for providing a magnetic junction having an engineered barrier layer
Grant 8,987,006 - Moon , et al. March 24, 2
2015-03-24
Method And System For Providing Magnetic Junctions Using Bcc Cobalt And Suitable For Use In Spin Transfer Torque Memories
App 20150041933 - Chepulskyy; Roman ;   et al.
2015-02-12
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
Grant 8,913,350 - Watts , et al. December 16, 2
2014-12-16
Method and system for providing inverted dual magnetic tunneling junction elements
Grant 8,891,290 - Tang , et al. November 18, 2
2014-11-18
Magnetic Junctions Having Insertion Layers And Magnetic Memories Using The Magnetic Junctions
App 20140264671 - Chepulskyy; Roman ;   et al.
2014-09-18
Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
Grant 8,786,039 - Apalkov , et al. July 22, 2
2014-07-22
Magnetic tunneling junction seed, capping, and spacer layer materials
Grant 8,779,538 - Chen , et al. July 15, 2
2014-07-15
Method and system for providing a magnetic junction using half metallic ferromagnets
Grant 8,766,383 - Apalkov , et al. July 1, 2
2014-07-01
Method And System For Providing Magnetic Junctions Having Engineered Perpendicular Magnetic Anisotropy
App 20140175582 - Apalkov; Dmytro ;   et al.
2014-06-26
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements
App 20140151829 - Watts; Steven M. ;   et al.
2014-06-05
Method and system for providing magnetic junctions having improved characteristics
Grant 8,710,602 - Tang , et al. April 29, 2
2014-04-29
Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
Grant 8,704,319 - Tang , et al. April 22, 2
2014-04-22
Method and system for setting a pinned layer in a magnetic tunneling junction
Grant 8,697,484 - Apalkov , et al. April 15, 2
2014-04-15
Method and system for providing a magnetic tunneling junction using thermally assisted switching
Grant 8,698,259 - Krounbi , et al. April 15, 2
2014-04-15
Method And System For Providing Inverted Dual Magnetic Tunneling Junction Elements
App 20140063921 - Tang; Xueti ;   et al.
2014-03-06
Magnetic Tunneling Junction Seed, Capping, And Spacer Layer Materials
App 20140008742 - Chen; Eugene Youjun ;   et al.
2014-01-09
Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements
Grant 8,546,896 - Lottis , et al. October 1, 2
2013-10-01
Method And System For Setting A Pinned Layer In A Magnetic Tunneling Junction
App 20130154034 - Apalkov; Dmytro ;   et al.
2013-06-20
Method And System For Providing A Magnetic Tunneling Junction Using Thermally Assisted Switching
App 20130154035 - Krounbi; Mohamad Towfik ;   et al.
2013-06-20
Method And System For Providing Magnetic Junctions Having Improved Characteristics
App 20130154036 - Tang; Xueti ;   et al.
2013-06-20
Method and system for providing multiple logic cells in a single stack
Grant 8,446,761 - Apalkov , et al. May 21, 2
2013-05-21
Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
Grant 8,432,009 - Apalkov , et al. April 30, 2
2013-04-30
Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
Grant 8,422,285 - Apalkov , et al. April 16, 2
2013-04-16
Method and system for providing a magnetic field aligned spin transfer torque random access memory
Grant 8,411,497 - Ong , et al. April 2, 2
2013-04-02
Method And System For Providing A Magnetic Junction Using Half Metallic Ferromagnets
App 20130009260 - Apalkov; Dmytro ;   et al.
2013-01-10
Method And System For Providing A Magnetic Junction Configured For Precessional Switching Using A Bias Structure
App 20120319221 - Apalkov; Dmytro ;   et al.
2012-12-20
Method And System For Providing A Magnetic Junction Having An Engineered Barrier Layer
App 20120267736 - Moon; Kiseok ;   et al.
2012-10-25
Method And System For Providing Magnetic Layers Having Insertion Layers For Use In Spin Transfer Torque Memories
App 20120261776 - Tang; Xueti ;   et al.
2012-10-18
Method And System For Providing Magnetic Layers Having Insertion Layers For Use In Spin Transfer Torque Memories
App 20120168885 - Apalkov; Dmytro ;   et al.
2012-07-05
Method And System For Providing Multiple Logic Cells In A Single Stack
App 20120170357 - Apalkov; Dmytro ;   et al.
2012-07-05
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements
App 20120155156 - Watts; Steven M. ;   et al.
2012-06-21
Method And System For Providing Magnetic Tunneling Junction Elements Having Laminated Free Layers And Memories Using Such Magnetic Elements
App 20120012953 - Lottis; Daniel ;   et al.
2012-01-19
Method And System For Providing A Magnetic Magnetic Field Aligned Spin Transfer Torque Random Access Memory
App 20110273928 - Ong; Adrian E. ;   et al.
2011-11-10
Method And System For Providing Dual Magnetic Tunneling Junctions Usable In Spin Transfer Torque Magnetic Memories
App 20110141804 - Apalkov; Dmytro ;   et al.
2011-06-16
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements
App 20110031569 - Watts; Steven M. ;   et al.
2011-02-10
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements
App 20110032644 - Watts; Steven M. ;   et al.
2011-02-10

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