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name:-0.016852140426636
name:-0.029098987579346
Tang; Xiaoliang Patent Filings

Tang; Xiaoliang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tang; Xiaoliang.The latest application filed is for "multi-parallel carbon dioxide heat pump control method based on target load control".

Company Profile
2.4.8
  • Tang; Xiaoliang - Suzhou CN
  • Tang; Xiaoliang - Jinjiang CN
  • Tang; Xiaoliang - Shanghai CN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Multi-parallel Carbon Dioxide Heat Pump Control Method Based On Target Load Control
App 20220282892 - Xiong; Dan ;   et al.
2022-09-08
Target Detection Method Based On Fusion Of Vision, Lidar, And Millimeter Wave Radar
App 20220277557 - WEI; Xian ;   et al.
2022-09-01
Nonvolatile memory device having a memory-transistor gate-electrode provided with a charge-trapping gate-dielectric layer and two sidewall select-transistor gate-electrodes
Grant 11,315,942 - Tang , et al. April 26, 2
2022-04-26
1.5T SONOS memory structure and manufacturing method
Grant 11,309,395 - Tang April 19, 2
2022-04-19
SONOS Memory and Method for Making the Same
App 20220037369 - Tang; Xiaoliang ;   et al.
2022-02-03
SONOS Memory and Method for Making the Same
App 20220020755 - Tang; Xiaoliang ;   et al.
2022-01-20
SONOS memory and method for manufacturing the same
Grant 11,088,158 - Tang August 10, 2
2021-08-10
1.5T SONOS Memory Structure and Manufacturing Method
App 20210143259 - Tang; Xiaoliang
2021-05-13
SONOS Memory and Method for Manufacturing the Same
App 20200365610 - Tang; Xiaoliang
2020-11-19
Sonos Memory Structure And Manufacturing Method
App 20200176463 - TANG; Xiaoliang ;   et al.
2020-06-04
Transistor with SONOS structure having barrier wall over adjacent portions of the select transistor well and memory transistor well
Grant 10,355,140 - Tang July 16, 2
2019-07-16
Transistor With Sonos Structure Having Barrier Wall Over Adjacent Portions Of The Select Transistor Well And Memory Transistor W
App 20190198680 - TANG; Xiaoliang
2019-06-27

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