Patent | Date |
---|
Method And Apparatus For Sensor Orientation Determination App 20210255211 - SZIL GYI; Peter ;   et al. | 2021-08-19 |
Monolithic, segmented light emitting diode array Grant 10,957,820 - Gordon , et al. March 23, 2 | 2021-03-23 |
Monolithic Segmented Led Array Architecture With Islanded Epitaxial Growth App 20190198564 - TANDON; Ashish ;   et al. | 2019-06-27 |
Light Emitting Diode Array App 20190198716 - GORDON; Luke ;   et al. | 2019-06-27 |
Segmented Led With Embedded Transistors App 20190189879 - TANDON; Ashish ;   et al. | 2019-06-20 |
Monolithic Segmented Led Array Architecture With Transparent Common N-contact App 20190189682 - YOUNG; Erik ;   et al. | 2019-06-20 |
Quartz Boat Method And Apparatus For Thin Film Thermal Treatment App 20140147800 - Alexander; Paul ;   et al. | 2014-05-29 |
Nanowire Enhanced Transparent Conductive Oxide For Thin Film Photovoltaic Devices App 20130174900 - Farris, III; Chester A. ;   et al. | 2013-07-11 |
Quartz boat method and apparatus for thin film thermal treatment Grant 8,461,061 - Alexander , et al. June 11, 2 | 2013-06-11 |
Method and structure for processing thin film PV cells with improved temperature uniformity Grant 8,398,772 - Tandon , et al. March 19, 2 | 2013-03-19 |
Method And Apparatus For Performing Reactive Thermal Treatment Of Thin Film Pv Material App 20120264072 - Tandon; Ashish | 2012-10-18 |
Quartz Boat Method and Apparatus for Thin Film Thermal Treatment App 20120021552 - Alexander; Paul ;   et al. | 2012-01-26 |
Single Junction CIGS/CIS Solar Module App 20110259395 - Wieting; Robert D. ;   et al. | 2011-10-27 |
Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV Cells App 20110220198 - Tandon; Ashish ;   et al. | 2011-09-15 |
Active region of a light emitting device optimized for increased modulation speed operation Grant 7,577,172 - Tandon , et al. August 18, 2 | 2009-08-18 |
Deep quantum well electro-absorption modulator Grant 7,443,561 - Bour , et al. October 28, 2 | 2008-10-28 |
Method and structure for deep well structures for long wavelength active regions Grant 7,358,523 - Tan , et al. April 15, 2 | 2008-04-15 |
Tailoring of switch bubble formation for LIMMS devices App 20070289853 - Beerling; Timothy ;   et al. | 2007-12-20 |
Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof Grant 7,269,196 - Tandon , et al. September 11, 2 | 2007-09-11 |
Deep quantum well electro-absorption modulator App 20060279828 - Bour; David P. ;   et al. | 2006-12-14 |
Active region of a light emitting device optimized for increased modulation speed operation App 20060274801 - Tandon; Ashish ;   et al. | 2006-12-07 |
Electroabsorption modulator Grant 7,142,342 - Bour , et al. November 28, 2 | 2006-11-28 |
Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region Grant 7,033,938 - Bour , et al. April 25, 2 | 2006-04-25 |
Material systems for semiconductor tunnel-junction structures Grant 7,034,331 - Chang , et al. April 25, 2 | 2006-04-25 |
Method and structure for deep well structures for long wavelength active regions App 20060083278 - Tan; Michael R. T. ;   et al. | 2006-04-20 |
GaAs-based long-wavelength laser incorporating tunnel junction structure Grant 7,016,392 - Tandon , et al. March 21, 2 | 2006-03-21 |
Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof App 20060007974 - Tandon; Ashish ;   et al. | 2006-01-12 |
Strain compensating structure to reduce oxide-induced defects in semiconductor devices App 20050184303 - Tandon, Ashish ;   et al. | 2005-08-25 |
Method of fabricating active layers in a laser utilizing InP-based active regions Grant 6,876,686 - Tandon , et al. April 5, 2 | 2005-04-05 |
Electroabsorption modulator App 20040240025 - Bour, David P. ;   et al. | 2004-12-02 |
GaAs-based long-wavelength laser incorporating tunnel junction structure App 20040218655 - Tandon, Ashish ;   et al. | 2004-11-04 |
Material systems for semiconductor tunnel-junction structures App 20040217343 - Chang, Ying-Lan ;   et al. | 2004-11-04 |
Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region App 20040219703 - Bour, David P. ;   et al. | 2004-11-04 |
Method of fabricating active layers in a laser utilizing InP-based active regions App 20040165631 - Tandon, Ashish ;   et al. | 2004-08-26 |
Material systems for semiconductor tunnel-junction structures Grant 6,765,238 - Chang , et al. July 20, 2 | 2004-07-20 |
Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region Grant 6,756,325 - Bour , et al. June 29, 2 | 2004-06-29 |
InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP Grant 6,730,944 - Tandon , et al. May 4, 2 | 2004-05-04 |
Long-wavelength photonic device with GaAsSb quantum-well layer Grant 6,711,195 - Chang , et al. March 23, 2 | 2004-03-23 |
Material systems for semiconductor tunnel-junction structures App 20040051113 - Chang, Ying-Lan ;   et al. | 2004-03-18 |
Laser having active region formed above substrate App 20040001521 - Tandon, Ashish ;   et al. | 2004-01-01 |
Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region App 20030211647 - Bour, David P. ;   et al. | 2003-11-13 |
Long-wavelength photonic device with GaAsSb quantum-well layer App 20030161369 - Chang, Ying-Lan ;   et al. | 2003-08-28 |