Tanabe; Tatsuya

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tanabe; Tatsuya.The latest application filed is for "group iii nitride semiconductor wafer and group iii nitride semiconductor device".

Company Profile

0.15.11

Tanabe; Tatsuya - Itami N/A JP
Tanabe; Tatsuya - Itami-shi JP
Tanabe; Tatsuya - Hyogo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Group III nitride semiconductor wafer and group III nitride semiconductor device Grant 8,633,514 - Hashimoto , et al. January 21, 2	2014-01-21
III nitride electronic device and III nitride semiconductor epitaxial substrate Grant 8,541,816 - Hashimoto , et al. September 24, 2	2013-09-24
Semiconductor device and manufacturing method thereof Grant 8,461,570 - Fujii , et al. June 11, 2	2013-06-11
Group III nitride semiconductor device and epitaxial substrate Grant 8,410,524 - Tanabe , et al. April 2, 2	2013-04-02
Film deposition method Grant 8,404,571 - Hashimoto , et al. March 26, 2	2013-03-26
Group Iii Nitride Semiconductor Wafer And Group Iii Nitride Semiconductor Device App 20120161205 - HASHIMOTO; Shin ; et al.	2012-06-28
Group III nitride semiconductor wafer and group III nitride semiconductor device Grant 8,148,751 - Hashimoto , et al. April 3, 2	2012-04-03
Film Deposition Apparatus App 20120006263 - Hashimoto; Shin ; et al.	2012-01-12
Semiconductor Device And Manufacturing Method Thereof App 20110210313 - Fujii; Kei ; et al.	2011-09-01
Film Deposition Method App 20110097880 - Hashimoto; Shin ; et al.	2011-04-28
Group Iii Nitride Semiconductor Wafer And Group Iii Nitride Semiconductor Device App 20110049573 - HASHIMOTO; Shin ; et al.	2011-03-03
High electron mobility transistor, field-effect transistor, and epitaxial substrate Grant 7,884,393 - Hashimoto , et al. February 8, 2	2011-02-08
Vertical gallium nitride semiconductor device and epitaxial substrate Grant 7,872,285 - Hashimoto , et al. January 18, 2	2011-01-18
High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate App 20100230723 - Hashimoto; Shin ; et al.	2010-09-16
Iii Nitride Electronic Device And Iii Nitride Semiconductor Epitaxial Substrate App 20100230687 - Hashimoto; Shin ; et al.	2010-09-16
Method of manufacturing group III Nitride Transistor Grant 7,749,828 - Hashimoto , et al. July 6, 2	2010-07-06
Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate App 20090194796 - Hashimoto; Shin ; et al.	2009-08-06
Group III Nitride Semiconductor Device and Epitaxial Substrate App 20090189186 - Tanabe; Tatsuya ; et al.	2009-07-30
High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor App 20090189190 - Hashimoto; Shin ; et al.	2009-07-30
Group III Nitride Semiconductor Device and Epitaxial Substrate App 20080265258 - Tanabe; Tatsuya ; et al.	2008-10-30
Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device Grant 6,150,677 - Tanaka , et al. November 21, 2	2000-11-21

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