Tam; Melissa M. Patent Filings

Patent	Date
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) Grant 7,745,328 - Yim , et al. June 29, 2	2010-06-29
Low Dielectric (low K) Barrier Films With Oxygen Doping By Plasma-enhanced Chemical Vapor Deposition (pecvd) App 20090053902 - Yim; Kang Sub ; et al.	2009-02-26
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) Grant 7,465,659 - Yim , et al. December 16, 2	2008-12-16
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) Grant 7,157,384 - Yim , et al. January 2, 2	2007-01-02
New Low Dielectric (low K) Barrier Films With Oxygen Doping By Plasma-enhanced Chemical Vapor Deposition (pecvd) App 20060246737 - Yim; Kang Sub ; et al.	2006-11-02
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) App 20050130440 - Yim, Kang Sub ; et al.	2005-06-16
Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide Grant 6,838,393 - Yim , et al. January 4, 2	2005-01-04
Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric App 20030211244 - Li, Lihua ; et al.	2003-11-13
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (pecvd) App 20030139035 - Yim, Kang Sub ; et al.	2003-07-24

Patent

Date

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
Grant 7,745,328 - Yim , et al. June 29, 2

2010-06-29

Low Dielectric (low K) Barrier Films With Oxygen Doping By Plasma-enhanced Chemical Vapor Deposition (pecvd)
App 20090053902 - Yim; Kang Sub ; et al.

2009-02-26

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
Grant 7,465,659 - Yim , et al. December 16, 2

2008-12-16

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
Grant 7,157,384 - Yim , et al. January 2, 2

2007-01-02

New Low Dielectric (low K) Barrier Films With Oxygen Doping By Plasma-enhanced Chemical Vapor Deposition (pecvd)
App 20060246737 - Yim; Kang Sub ; et al.

2006-11-02

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
App 20050130440 - Yim, Kang Sub ; et al.

2005-06-16

Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
Grant 6,838,393 - Yim , et al. January 4, 2

2005-01-04

Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
App 20030211244 - Li, Lihua ; et al.

2003-11-13

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (pecvd)
App 20030139035 - Yim, Kang Sub ; et al.

2003-07-24

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Tam; Melissa M.

Patent Applications and Registrations