Takikawa; Takatoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Takikawa; Takatoshi.The latest application filed is for "substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same".

Company Profile

0.7.6

Takikawa; Takatoshi - Itami JP
Takikawa, Takatoshi - Itami-shi JP
Takikawa; Takatoshi - Hyogo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Susbstrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same Grant 6,974,558 - Yamagata , et al. December 13, 2	2005-12-13
Heat-resistant, creep-resistant aluminum alloy and billet thereof as well as methods of preparing the same Grant 6,962,673 - Hattori , et al. November 8, 2	2005-11-08
Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same App 20050025654 - Yamagata, Shinichi ; et al.	2005-02-03
Methods of preparing heat resistant, creep-resistant aluminum alloy App 20040175285 - Hattori, Hisao ; et al.	2004-09-09
Heat-resistant and creep-resistant aluminum alloy and billet thereof, and method for their production App 20030156968 - Hattori, Hisao ; et al.	2003-08-21
Valve-open-close mechanism Grant 6,371,063 - Oyama , et al. April 16, 2	2002-04-16
Susbstrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same App 20020034651 - Yamagata, Shinichi ; et al.	2002-03-21
Electromagnetic actuator App 20010007440 - Oyama, Hitoshi ; et al.	2001-07-12
Valve-open-close mechanism App 20010006047 - Oyama, Hitoshi ; et al.	2001-07-05
Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same Grant 6,183,874 - Yamagata , et al. February 6, 2	2001-02-06
Process for manufacturing a semiconductor substrate comprising laminated copper, silicon oxide and silicon nitride layers Grant 5,643,834 - Harada , et al. July 1, 1	1997-07-01
Advance multilayer molded plastic package using mesic technology Grant 5,556,807 - Bhattacharyya , et al. September 17, 1	1996-09-17
Plastic package type semiconductor device having a rolled metal substrate Grant 5,455,453 - Harada , et al. October 3, 1	1995-10-03

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