Takeuchi; Misaichi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Takeuchi; Misaichi.The latest application filed is for "method of manufacturing semiconductor substrate".
- Takeuchi; Misaichi - Hwaseong-si KR
- Takeuchi; Misaichi - Kusatsu N/A JP
- Takeuchi; Misaichi - Kusatsu-shi JP
- Takeuchi; Misaichi - Fujimi JP
- Takeuchi, Misaichi - Fujimi-shi JP
| Patent | Date |
|---|---|
| Method of manufacturing semiconductor substrate including separating two semiconductor layers from a growth substrate Grant 9,899,565 - Tak , et al. February 20, 2 | 2018-02-20 |
| Method Of Manufacturing Semiconductor Substrate App 20170069785 - TAK; Young Jo ; et al. | 2017-03-09 |
| Method Of Manufacturing Nanostructure Semiconductor Light Emitting Device App 20160118533 - TAKEUCHI; MISAICHI ; et al. | 2016-04-28 |
| Semiconductor device having aluminum nitride layer with void formed therein Grant 8,698,168 - Ueta , et al. April 15, 2 | 2014-04-15 |
| Crystal Growth Method And Semiconductor Device App 20120007039 - Ueta; Yoshihiro ; et al. | 2012-01-12 |
| Method for the formation of semiconductor layer Grant 6,530,991 - Tanaka , et al. March 11, 2 | 2003-03-11 |
| Method for the formation of semiconductor layer App 20010012678 - Tanaka, Satoru ; et al. | 2001-08-09 |
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