Takeguchi; Tetsuji

Patent Applications and Registrations

Patent applications and USPTO patent grants for Takeguchi; Tetsuji.The latest application filed is for "nonvolatile semiconductor memory device performing erase operation that creates narrow threshold distribution".

Company Profile

0.9.5

Takeguchi; Tetsuji - Kawasaki JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Redundancy substitution method, semiconductor memory device and information processing apparatus Grant 7,266,015 - Iioka , et al. September 4, 2	2007-09-04
Nonvolatile semiconductor memory device performing erase operation that creates narrow threshold distribution Grant 7,227,784 - Takeguchi June 5, 2	2007-06-05
Nonvolatile semiconductor memory device performing erase operation that creates narrow threshold distribution App 20070103974 - Takeguchi; Tetsuji	2007-05-10
Redundancy substitution method, semiconductor memory device and information processing apparatus App 20070053229 - Iioka; Osamu ; et al.	2007-03-08
Semiconductor memory device having a resistance adjustment unit Grant 6,928,000 - Homma , et al. August 9, 2	2005-08-09
Semiconductor memory device App 20040196712 - Homma, Yoshikazu ; et al.	2004-10-07
Semiconductor device having a high-speed data read operation Grant 6,735,120 - Homma , et al. May 11, 2	2004-05-11
Semiconductor memory device App 20030103379 - Homma, Yoshikazu ; et al.	2003-06-05
Semiconductor memory device App 20010048610 - Homma, Yoshikazu ; et al.	2001-12-06
Semiconductor memory device for reducing a time needed for performing a protecting operation Grant 6,215,717 - Takeguchi , et al. April 10, 2	2001-04-10
Flash memory with improved erasability and its circuitry Grant 5,770,963 - Akaogi , et al. June 23, 1	1998-06-23
Drive circuit for flash memory with improved erasability Grant 5,619,450 - Takeguchi April 8, 1	1997-04-08
Flash memory with improved erasability and its circuitry Grant 5,592,419 - Akaogi , et al. January 7, 1	1997-01-07
Electrically erasable nonvolatile semiconductor memory that permits data readout despite the occurrence of over-erased memory cells Grant 5,400,276 - Takeguchi March 21, 1	1995-03-21

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