TAKASUKA; Eiryo

Patent Applications and Registrations

Patent applications and USPTO patent grants for TAKASUKA; Eiryo.The latest application filed is for "silicon carbide single crystal substrate".

Company Profile

1.11.19

TAKASUKA; Eiryo - Itami-shi Hyogo
Takasuka; Eiryo - Itami N/A JP
Takasuka; Eiryo - Hyogo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Silicon Carbide Single Crystal Substrate App 20210054529 - OKITA; Kyoko ; et al.	2021-02-25
Method Of Manufacturing Silicon Carbide Single Crystal App 20170314161 - SASAKI; Sho ; et al.	2017-11-02
Metalorganic chemical vapor deposition reactor Grant 8,920,565 - Ueno , et al. December 30, 2	2014-12-30
Metal organic chemical vapor deposition equipment Grant 8,906,162 - Ueno , et al. December 9, 2	2014-12-09
Vapor-phase process apparatus, vapor-phase process method, and substrate Grant 8,628,616 - Takasuka , et al. January 14, 2	2014-01-14
Method For Manufacturing Silicon Carbide Single Crystal App 20130255568 - INOUE; Hiroki ; et al.	2013-10-03
Vapor-phase Process Apparatus, Vapor-phase Process Method, And Substrate App 20130108788 - TAKASUKA; Eiryo ; et al.	2013-05-02
Vapor-phase process apparatus, vapor-phase process method, and substrate Grant 8,349,083 - Takasuka , et al. January 8, 2	2013-01-08
Vapor-phase process apparatus, vapor-phase process method, and substrate Grant 8,349,403 - Takasuka , et al. January 8, 2	2013-01-08
Metal Organic Chemical Vapor Deposition Equipment App 20120118234 - UENO; Masaki ; et al.	2012-05-17
Group III nitride white light emitting diode Grant 8,120,012 - Chua , et al. February 21, 2	2012-02-21
Vapor-phase Process Apparatus, Vapor-phase Process Method, And Substrate App 20120024227 - TAKASUKA; Eiryo ; et al.	2012-02-02
Vapor-phase Process Apparatus, Vapor-phase Process Method, And Substrate App 20120003142 - Takasuka; Eiryo ; et al.	2012-01-05
Method For Manufacturing Light Emitting Element And Light Emitting Element App 20110198566 - Yoshizumi; Yusuke ; et al.	2011-08-18
GaN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAME App 20100173483 - Ueno; Masaki ; et al.	2010-07-08
Group Iii Nitride White Light Emitting Diode App 20090302308 - Chua; Soo-Jin ; et al.	2009-12-10
Group Iii Nitride White Light Emitting Diode App 20090206320 - Chua; Soo Jin ; et al.	2009-08-20
Method Of Growing Group Iii-v Compound Semiconductor, And Method Of Manufacturing Light-emitting Device And Electron Device App 20090197399 - Nakamura; Takao ; et al.	2009-08-06
Vapor-phase Process Apparatus, Vapor-phase Process Method, And Substrate App 20090148704 - TAKASUKA; Eiryo ; et al.	2009-06-11
Metalorganic Chemical Vapor Deposition Reactor App 20090126635 - Ueno; Masaki ; et al.	2009-05-21
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same Grant 7,387,678 - Akita , et al. June 17, 2	2008-06-17
Vapor-Phase Growth System and Vapor-Phase Growth Method App 20080131979 - Takasuka; Eiryo	2008-06-05
Metal organic chemical vapor deposition equipment App 20080006208 - Ueno; Masaki ; et al.	2008-01-10
GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same App 20050095861 - Ueno, Masaki ; et al.	2005-05-05
GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same Grant 6,841,274 - Ueno , et al. January 11, 2	2005-01-11
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same App 20040262624 - Akita, Katsushi ; et al.	2004-12-30
GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same App 20030209185 - Ueno, Masaki ; et al.	2003-11-13

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