loadpatents
name:-0.015410900115967
name:-0.012693881988525
name:-0.0023128986358643
Takase; Nobumitsu Patent Filings

Takase; Nobumitsu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Takase; Nobumitsu.The latest application filed is for "cover for vitreous silica crucible and vitreous silica crucible and method of handling the same".

Company Profile
0.11.14
  • Takase; Nobumitsu - Tokyo N/A JP
  • Takase; Nobumitsu - Minato-ku JP
  • Takase; Nobumitsu - Saga JP
  • Takase; Nobumitsu - Saga-shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible
Grant 8,696,813 - Fukui , et al. April 15, 2
2014-04-15
Cover For Vitreous Silica Crucible And Vitreous Silica Crucible And Method Of Handling The Same
App 20120270167 - Sato; Masaru ;   et al.
2012-10-25
Method Of Manufacturing Silicon Single Crystal, Apparatus For Pulling Silicon Single Crystal And Vitreous Silica Crucible
App 20100326349 - FUKUI; Masanori ;   et al.
2010-12-30
Method for growing silicon single crystal and method for manufacturing silicon wafer
Grant 7,819,972 - Inami , et al. October 26, 2
2010-10-26
Seed Crystal For Pulling Silicon Single Crystal And Method For Manufacturing Silicon Single Crystal By Using The Seed Crystal
App 20100242832 - Takase; Nobumitsu
2010-09-30
Silicon single crystal and method of producing the same
App 20090311160 - Saito; Yasuhiro ;   et al.
2009-12-17
Method for growing silicon single crystal
App 20090260564 - SAITO; Yasuhiro ;   et al.
2009-10-22
Method for growing silicon single crystal
Grant 7,473,314 - Inami , et al. January 6, 2
2009-01-06
Method for producing silicon single crystals and silicon single crystal produced thereby
Grant 7,442,251 - Inami , et al. October 28, 2
2008-10-28
High resistance silicon wafer and its manufacturing method
Grant 7,397,110 - Takase , et al. July 8, 2
2008-07-08
High-resistance silicon wafer and process for producing the same
Grant 7,316,745 - Sadamitsu , et al. January 8, 2
2008-01-08
Silicon annealed wafer and silicon epitaxial wafer
Grant 7,273,647 - Nishikawa , et al. September 25, 2
2007-09-25
High resistivity silicon wafer and method for fabricating the same
Grant 7,226,571 - Takase , et al. June 5, 2
2007-06-05
Manufacturing method of high resistivity silicon single crystal
Grant 7,220,308 - Takase , et al. May 22, 2
2007-05-22
Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus
Grant 7,172,656 - Takanashi , et al. February 6, 2
2007-02-06
Method for producing silicon single crystals and silicon single crystal produced thereby
App 20060283377 - Inami; Shuichi ;   et al.
2006-12-21
Method for growing silicon single crystal
App 20060283373 - Inami; Shuichi ;   et al.
2006-12-21
Method for growing silicon single crystal and method for manufacturing silicon wafer
App 20060283379 - Inami; Shuichi ;   et al.
2006-12-21
High resistance silicon wafer and method for production thereof
App 20050253221 - Takase, Nobumitsu ;   et al.
2005-11-17
High-resistance silicon wafer and process for producing the same
App 20050250349 - Sadamitsu, Shinsuke ;   et al.
2005-11-10
High resistivity silicon wafer and method for fabricating the same
App 20050127477 - Takase, Nobumitsu ;   et al.
2005-06-16
Manufacturing method of high resistivity silicon single crystal
App 20050000410 - Takase, Nobumitsu ;   et al.
2005-01-06
Device and method for measuring position of liquid surface of melt in single-crystal-growing apparatus
App 20040221794 - Takanashi, Keiichi ;   et al.
2004-11-11
Silicon annealed wafer and silicon epitaxial wafer
App 20040194692 - Nishikawa, Hideshi ;   et al.
2004-10-07

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