Takasaki; Kanetake

Patent Applications and Registrations

Patent applications and USPTO patent grants for Takasaki; Kanetake.The latest application filed is for "semiconductor device and method for fabricating the same".

Company Profile

0.18.2

Takasaki; Kanetake - Kawasaki JP
Takasaki, Kanetake - Kawasaki-shi JP
Takasaki; Kanetake - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Manufacture system for semiconductor device with thin gate insulating film Grant 6,984,267 - Irino , et al. January 10, 2	2006-01-10
Semiconductor device and method for fabricating the same Grant 6,780,699 - Tamura , et al. August 24, 2	2004-08-24
Semiconductor device and method for fabricating the same App 20030168697 - Tamura, Yasuyuki ; et al.	2003-09-11
Manufacture system for semiconductor device with thin gate insulating film App 20030022523 - Irino, Kiyoshi ; et al.	2003-01-30
Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride Grant 6,468,926 - Irino , et al. October 22, 2	2002-10-22
Method of making a compound semiconductor crystal-on-substrate structure Grant 5,424,243 - Takasaki June 13, 1	1995-06-13
Process for the preparation of a high dielectric thin film using ECR plasma CVD Grant 5,312,783 - Takasaki , et al. May 17, 1	1994-05-17
Method for fabricating a semiconductor substrate Grant 5,210,052 - Takasaki May 11, 1	1993-05-11
Method of producing a semiconductor device Grant 5,183,778 - Takasaki February 2, 1	1993-02-02
Semiconductor device with first and second buffer layers Grant 5,107,317 - Takasaki April 21, 1	1992-04-21
Semiconductor device having a heteroepitaxial substrate Grant 5,057,880 - Eshita , et al. October 15, 1	1991-10-15
Compound semiconductor device Grant 4,929,985 - Takasaki May 29, 1	1990-05-29
Process for the formation of phosphosilicate glass coating Grant 4,781,945 - Nishimura , et al. November 1, 1	1988-11-01
UV erasable EPROM with UV transparent silicon oxynitride coating Grant 4,581,622 - Takasaki , et al. April 8, 1	1986-04-08
Vapor phase growth method Grant 4,539,068 - Takagi , et al. September 3, 1	1985-09-03
Process of producing a semiconductor device Grant 4,532,022 - Takasaki , et al. July 30, 1	1985-07-30
Process for manufacturing a semiconductor device having a non-porous passivation layer Grant 4,406,053 - Takasaki , et al. September 27, 1	1983-09-27
Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film Grant 4,394,401 - Shioya , et al. July 19, 1	1983-07-19
Method of reactive sputtering Grant 4,384,933 - Takasaki May 24, 1	1983-05-24
Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process Grant 4,363,868 - Takasaki , et al. December 14, 1	1982-12-14

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