Takakusaki; Misao
Patent Applications and Registrations
Patent applications and USPTO patent grants for Takakusaki; Misao.The latest application filed is for "method for producing nitride compound semiconductor substrate, and nitride compound semiconductor free-standing substrate".
- Takakusaki; Misao - Toda-shi JP
- Takakusaki; Misao - Toda JP
- Takakusaki; Misao - Saitama JP
| Patent | Date |
|---|---|
| Method For Producing Nitride Compound Semiconductor Substrate, And Nitride Compound Semiconductor Free-standing Substrate App 20120256297 - Morioka; Satoru ; et al. | 2012-10-11 |
| Epitaxial growth process Grant 8,231,728 - Takakusaki , et al. July 31, 2 | 2012-07-31 |
| Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystal Grant 8,137,460 - Morioka , et al. March 20, 2 | 2012-03-20 |
| MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE App 20110244665 - MIKAMI; Makoto ; et al. | 2011-10-06 |
| Substrate For Epitaxial Growth And Method For Producing Nitride Compound Semiconductor Single Crystal App 20100101486 - Takakusaki; Misao ; et al. | 2010-04-29 |
| MANUFACTURING METHOD OF GaN THIN FILM TEMPLATE SUBSTRATE, GaN THIN FILM TEMPLATE SUBSTRATE AND GaN THICK FILM SINGLE CRYSTAL App 20090294774 - Morioka; Satoru ; et al. | 2009-12-03 |
| Epitaxial growth process App 20060178000 - Takakusaki; Misao ; et al. | 2006-08-10 |
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