Takakura; Teruyoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Takakura; Teruyoshi.The latest application filed is for "semiconductor laser device".

Company Profile

1.8.10

Takakura; Teruyoshi - Sakai JP
TAKAKURA; TERUYOSHI - Osaka JP
Takakura; Teruyoshi - Tenri-shi JP
Takakura; Teruyoshi - Tenri JP
Takakura; Teruyoshi - Tenri-shi Nara JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor laser device Grant 11,128,105 - Takakura , et al. September 21, 2	2021-09-21
Semiconductor Laser Device App 20200251885 - Kind Code	2020-08-06
Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method App 20120049328 - Tsuda; Yuhzoh ; et al.	2012-03-01
Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method Grant 8,076,165 - Tsuda , et al. December 13, 2	2011-12-13
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus Grant 7,858,992 - Ueta , et al. December 28, 2	2010-12-28
Nitride semiconductor light-emitting device Grant 7,700,963 - Takakura , et al. April 20, 2	2010-04-20
Nitride-based semiconductor light-emitting device App 20100002738 - Takakura; Teruyoshi ; et al.	2010-01-07
Nitride Semiconductor Light-emitting Device, Method Of Fabricating It, And Semiconductor Optical Apparatus App 20090236585 - Ueta; Yoshihiro ; et al.	2009-09-24
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus Grant 7,579,627 - Ueta , et al. August 25, 2	2009-08-25
Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method App 20090121320 - Tsuda; Yuhzoh ; et al.	2009-05-14
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus Grant 7,462,882 - Ueta , et al. December 9, 2	2008-12-09
Nitride semiconductor light-emitting device and method for producing same App 20080283866 - Takakura; Teruyoshi ; et al.	2008-11-20
Nitride semiconductor light-emitting device and method for producing same Grant 7,410,819 - Takakura , et al. August 12, 2	2008-08-12
Method for fabricating a nitride semiconductor light-emitting device Grant 7,109,049 - Takakura , et al. September 19, 2	2006-09-19
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus App 20060202188 - Ueta; Yoshihiro ; et al.	2006-09-14
Nitride semiconductor light-emitting device and method for producing same App 20060131590 - Takakura; Teruyoshi ; et al.	2006-06-22
Method for fabricating a nitride semiconductor light-emitting device App 20050186694 - Takakura, Teruyoshi ; et al.	2005-08-25
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus App 20050141577 - Ueta, Yoshihiro ; et al.	2005-06-30

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.