Patent | Date |
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Device structure and manufacturing method using HDP deposited source-body implant block Grant 10,896,968 - Bhalla , et al. January 19, 2 | 2021-01-19 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block App 20170288034 - Bhalla; Anup ;   et al. | 2017-10-05 |
Device structure and manufacturing method using HDP deposited source-body implant block Grant 9,716,156 - Bhalla , et al. July 25, 2 | 2017-07-25 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block App 20160322469 - Bhalla; Anup ;   et al. | 2016-11-03 |
Method of fabrication and device configuration of asymmetrical DMOSFET with schottky barrier source Grant 9,337,329 - Hu , et al. May 10, 2 | 2016-05-10 |
Dual gate oxide trench MOSFET with channel stop trench Grant 9,214,545 - Tai , et al. December 15, 2 | 2015-12-15 |
Device structure and manufacturing method using HDP deposited source-body implant block Grant 9,024,378 - Bhalla , et al. May 5, 2 | 2015-05-05 |
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Grant 9,006,053 - Pan , et al. April 14, 2 | 2015-04-14 |
Dual Gate Oxide Trench Mosfet With Channel Stop Trench App 20150097232 - Tai; Sung-Shan ;   et al. | 2015-04-09 |
Fabrication of trench DMOS device having thick bottom shielding oxide Grant 9,000,514 - Lee , et al. April 7, 2 | 2015-04-07 |
Dual gate oxide trench MOSFET with channel stop trench Grant 8,907,416 - Tai , et al. December 9, 2 | 2014-12-09 |
Direct contact in trench with three-mask shield gate process Grant 8,847,306 - Tai , et al. September 30, 2 | 2014-09-30 |
Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process Grant 8,835,251 - Hu , et al. September 16, 2 | 2014-09-16 |
Method of Making MOSFET Integrated with Schottky Diode with Simplified One-time Top-Contact Trench Etching App 20140235024 - Pan; Ji ;   et al. | 2014-08-21 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block App 20140225187 - Bhalla; Anup ;   et al. | 2014-08-14 |
Method Of Making Mosfet Integrated With Schottky Diode With Simplified One-time Top-contact Trench Etching App 20140179074 - Pan; Ji ;   et al. | 2014-06-26 |
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Grant 8,748,268 - Pan , et al. June 10, 2 | 2014-06-10 |
Manufacturing method power semiconductor device Grant 8,709,895 - Tai , et al. April 29, 2 | 2014-04-29 |
Method of forming a self-aligned contact opening in MOSFET Grant 8,643,094 - Tai , et al. February 4, 2 | 2014-02-04 |
Trench type power transistor device Grant 8,536,646 - Yeh , et al. September 17, 2 | 2013-09-17 |
Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET Grant 8,524,558 - Tai , et al. September 3, 2 | 2013-09-03 |
Process of forming ultra thin wafers having an edge support ring Grant 8,507,362 - Feng , et al. August 13, 2 | 2013-08-13 |
Dual Gate Oxide Trench Mosfet With Channel Stop Trench App 20130175612 - Tai; Sung-Shan ;   et al. | 2013-07-11 |
Polysilicon control etch back indicator Grant 8,471,368 - Wang , et al. June 25, 2 | 2013-06-25 |
Trench Type Power Transistor Device And Method Of Fabricating The Same App 20130069143 - Yeh; Teng-Hao ;   et al. | 2013-03-21 |
Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process Grant 8,394,702 - Tai , et al. March 12, 2 | 2013-03-12 |
Method of forming a self-aligned contact opening in MOSFET App 20130049104 - Tai; Sung-Shan ;   et al. | 2013-02-28 |
Device structure and manufacturing method using HDP deposited using deposited source-body implant block Grant 8,372,708 - Bhalla , et al. February 12, 2 | 2013-02-12 |
Trench Junction Barrier Schottky Structure With Enhanced Contact Area Integrated With A Mosfet App 20130001699 - Tai; Sung-Shan ;   et al. | 2013-01-03 |
Semiconductor power device having shielding electrode for improving breakdown voltage Grant 8,334,566 - Tai December 18, 2 | 2012-12-18 |
Fabrication Of Trench Dmos Device Having Thick Bottom Shielding Oxide App 20120292693 - LEE; Yeeheng ;   et al. | 2012-11-22 |
Fabrication of trench DMOS device having thick bottom shielding oxide Grant 8,252,647 - Lee , et al. August 28, 2 | 2012-08-28 |
Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions Grant 8,236,653 - Hu , et al. August 7, 2 | 2012-08-07 |
Polysilicon Control Etch Back Indicator App 20120193631 - Wang; Yu ;   et al. | 2012-08-02 |
Polysilicon control etch-back indicator Grant 8,193,061 - Wang , et al. June 5, 2 | 2012-06-05 |
Direct contact in trench with three-mask shield gate process Grant 8,187,939 - Tai , et al. May 29, 2 | 2012-05-29 |
Configuration And Method To Form Mosfet Devices With Low Resistance Silicide Gate And Mesa Contact Regions App 20120129306 - Hu; Yongzhong ;   et al. | 2012-05-24 |
Termination Structure Of Power Semiconductor Device And Manufacturing Method Thereof App 20120112268 - Tai; Sung-Shan ;   et al. | 2012-05-10 |
Direct Contact In Trench With Three-mask Shield Gate Process App 20120098059 - Tai; Sung-Shan ;   et al. | 2012-04-26 |
Method of fabrication and device configuration of asymmetrical DMOSFET with schottky barrier source App 20120083084 - Hu; Yongzhong ;   et al. | 2012-04-05 |
Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET App 20120028427 - Tai; Sung-Shan ;   et al. | 2012-02-02 |
Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions Grant 8,105,905 - Hu , et al. January 31, 2 | 2012-01-31 |
Device structure and manufacturing method using HDP deposited using deposited source-body implant block App 20120018793 - Bhalla; Anup ;   et al. | 2012-01-26 |
Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET Grant 8,058,687 - Tai , et al. November 15, 2 | 2011-11-15 |
Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer Grant 8,053,315 - Tai , et al. November 8, 2 | 2011-11-08 |
Process of forming ultra thin wafers having an edge support ring Grant 8,048,775 - Feng , et al. November 1, 2 | 2011-11-01 |
Device structure and manufacturing method using HDP deposited source-body implant block Grant 8,035,159 - Bhalla , et al. October 11, 2 | 2011-10-11 |
Semiconductor Power Device And Manufacturing Method Thereof App 20110233659 - TAI; SUNG-SHAN | 2011-09-29 |
Dual Gate Oxide Trench Mosfet With Channel Stop Trench And Three Or Four Masks Process App 20110233667 - Tai; Sung-Shan ;   et al. | 2011-09-29 |
Device configuration of asymmetrical DMOSFET with schottky barrier source Grant 8,022,482 - Hu , et al. September 20, 2 | 2011-09-20 |
Process of forming ultra thin wafers having an edge support ring App 20110223742 - Feng; Tao ;   et al. | 2011-09-15 |
Shallow source MOSFET Grant 8,008,151 - Tai , et al. August 30, 2 | 2011-08-30 |
Polysilicon control etch-back indicator App 20110198588 - Wang; Yu ;   et al. | 2011-08-18 |
Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions App 20110124167 - Hu; Yongzhong ;   et al. | 2011-05-26 |
Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT) Grant 7,932,148 - Chang , et al. April 26, 2 | 2011-04-26 |
Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process App 20110092035 - Hu; YongZhong ;   et al. | 2011-04-21 |
Polysilicon control etch-back indicator Grant 7,928,507 - Wang , et al. April 19, 2 | 2011-04-19 |
Direct Contact In Trench With Three-mask Shield Gate Process App 20110068386 - Tai; Sung-Shan ;   et al. | 2011-03-24 |
Fabrication Of Trench Dmos Device Having Thick Bottom Shielding Oxide App 20110049618 - Lee; Yeeheng ;   et al. | 2011-03-03 |
Trenched mosfets with part of the device formed on a (110) crystal plane App 20110042724 - Bhalla; Anup ;   et al. | 2011-02-24 |
Shallow source MOSFET Grant 7,875,541 - Tai , et al. January 25, 2 | 2011-01-25 |
Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process Grant 7,855,422 - Hu , et al. December 21, 2 | 2010-12-21 |
Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions Grant 7,829,941 - Hu , et al. November 9, 2 | 2010-11-09 |
Completely decoupled high voltage and low voltage transistor manufacturing processes Grant 7,824,977 - Hu , et al. November 2, 2 | 2010-11-02 |
One-time programmable (OTP) memory cell Grant 7,805,687 - Hu , et al. September 28, 2 | 2010-09-28 |
Shallow source MOSFET App 20100105182 - Tai; Sung-Shan ;   et al. | 2010-04-29 |
Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer App 20100099230 - Tai; Sung-Shan ;   et al. | 2010-04-22 |
Polysilicon control etch-back indicator App 20100084707 - Wang; Yu ;   et al. | 2010-04-08 |
Shallow source MOSFET Grant 7,667,264 - Tai , et al. February 23, 2 | 2010-02-23 |
Double gate manufactured with locos techniques App 20100015770 - Tai; Sung-Shan ;   et al. | 2010-01-21 |
Polysilicon control etch-back indicator Grant 7,632,733 - Wang , et al. December 15, 2 | 2009-12-15 |
Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT) App 20090148995 - Chang; Hong ;   et al. | 2009-06-11 |
Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes Grant 7,492,005 - Chang , et al. February 17, 2 | 2009-02-17 |
Process of forming ultra thin wafers having an edge support ring App 20090020854 - Feng; Tao ;   et al. | 2009-01-22 |
Double gate manufactured with locos techniques App 20080296673 - Tai; Sung-Shan ;   et al. | 2008-12-04 |
Device structure and manufacturing method using HDP deposited source-body implant block App 20080265289 - Bhalla; Anup ;   et al. | 2008-10-30 |
Completely decoupled high voltage and low voltage transistor manufacurting processes App 20080237777 - Hu; YongZhong ;   et al. | 2008-10-02 |
Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET App 20080179668 - Tai; Sung-Shan ;   et al. | 2008-07-31 |
Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer App 20080150013 - Tai; Sung-Shan ;   et al. | 2008-06-26 |
Shallow source MOSFET App 20080090357 - Tai; Sung-Shan ;   et al. | 2008-04-17 |
Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process App 20070281418 - Hu; YongZhong ;   et al. | 2007-12-06 |
Polysilicon control etch-back indicator App 20070252197 - Wang; Yu ;   et al. | 2007-11-01 |
Method of fabrication and device configuration of asymmetrical DMOSFET with Schottky barrier source App 20070187751 - Hu; Yongzhong ;   et al. | 2007-08-16 |
One time programmable memory cell Grant 7,256,446 - Hu , et al. August 14, 2 | 2007-08-14 |
Configuration and method to form mosfet devices with low resistance silicide gate and mesa contact regions App 20070170498 - Hu; Yongzhong ;   et al. | 2007-07-26 |
Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes App 20070158701 - Chang; Hong ;   et al. | 2007-07-12 |
Cobalt silicon contact barrier metal process for high density semiconductor power devices App 20070075360 - Chang; Hong ;   et al. | 2007-04-05 |
Tri-states one-time programmable memory (OTP) cell App 20070069297 - Hu; YongZhong ;   et al. | 2007-03-29 |
One time programmable memory cell App 20060249791 - Hu; Yongzhong ;   et al. | 2006-11-09 |
Trenched MOSFETS with part of the device formed on a (110) crystal plane App 20060108635 - Bhalla; Anup ;   et al. | 2006-05-25 |
Shallow source MOSFET App 20060071268 - Tai; Sung-Shan ;   et al. | 2006-04-06 |
Method of making trench-gated MOSFET having cesium gate oxide layer Grant 6,509,233 - Chang , et al. January 21, 2 | 2003-01-21 |
Method of making trench-gated MOSFET having cesium gate oxide layer App 20020123196 - Chang, Mike ;   et al. | 2002-09-05 |
Method of forming vertical planar DMOSFET with self-aligned contact Grant 6,277,695 - Williams , et al. August 21, 2 | 2001-08-21 |