Tada; Gen

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tada; Gen.The latest application filed is for "semiconductor device".

Company Profile

0.19.14

Tada; Gen - Chiyoda-ku N/A JP
Tada; Gen - Nagano JP
Tada; Gen - Matsumoto JP
TADA; Gen - Matsumoto City JP
TADA; Gen - Shinagawa-ku Tokyo
Tada; Gen - Tokyo JP
Tada; Gen - Kawasaki JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device Grant 9,401,319 - Oga , et al. July 26, 2	2016-07-26
Semiconductor Device App 20130307130 - Oga; Takuya ; et al.	2013-11-21
Drive device Grant 7,876,291 - Kobayashi , et al. January 25, 2	2011-01-25
Semiconductor integrated circuit for driving the address of a display device Grant 7,714,363 - Nomiyama , et al. May 11, 2	2010-05-11
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Grant 7,687,385 - Matsuzaki , et al. March 30, 2	2010-03-30
Semiconductor circuit, inverter circuit, semiconductor apparatus, and manufacturing method thereof Grant 7,606,082 - Shimabukuro , et al. October 20, 2	2009-10-20
Semiconductor Integrated Circuit App 20080083937 - NOMIYAMA; Takahiro ; et al.	2008-04-10
Semiconductor Device Exhibiting A High Breakdown Voltage And The Method Of Manufacturing The Same App 20070155144 - Matsuzaki; Kazuo ; et al.	2007-07-05
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Grant 7,195,980 - Matsuzaki , et al. March 27, 2	2007-03-27
Semicoductor Circuit, Inverter Circuit, Semiconductor Apparatus, And Manufacturing Method Thereof App 20070064476 - SHIMABUKURO; Hiroshi ; et al.	2007-03-22
Display device driver circuit Grant 7,173,454 - Kobayashi , et al. February 6, 2	2007-02-06
Display panel drive device App 20060223254 - Kobayashi; Hideto ; et al.	2006-10-05
Display device driver circuit App 20050195179 - Kobayashi, Hideto ; et al.	2005-09-08
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same App 20050127439 - Matsuzaki, Kazuo ; et al.	2005-06-16
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Grant 6,853,034 - Matsuzaki , et al. February 8, 2	2005-02-08
Lateral high breakdown voltage MOSFET and device provided therewith Grant 6,844,598 - Tada , et al. January 18, 2	2005-01-18
Lateral high breakdown voltage MOSFET and device provided therewith Grant 6,818,954 - Tada , et al. November 16, 2	2004-11-16
Lateral high breakdown voltage MOSFET and device provided therewith App 20040159856 - Tada, Gen ; et al.	2004-08-19
High withstand voltage semiconductor device Grant 6,740,952 - Fujishima , et al. May 25, 2	2004-05-25
Lateral high breakdown voltage MOSFET and device provided therewith App 20030122195 - Tada, Gen ; et al.	2003-07-03
MIS semiconductor device with low on resistance and high breakdown voltage Grant 6,525,390 - Tada , et al. February 25, 2	2003-02-25
High withstand voltage semiconductor device App 20020145172 - Fujishima, Naoto ; et al.	2002-10-10
Semiconductor apparatus and method for manufacturing the same App 20020003288 - Saitou, Masaru ; et al.	2002-01-10
Semiconductor device App 20010048122 - Tada, Gen ; et al.	2001-12-06
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same App 20010038122 - Matsuzaki, Kazuo ; et al.	2001-11-08
High voltage integrated circuit Grant 5,973,366 - Tada October 26, 1	1999-10-26
Method of producing a semiconductor device having two MIS transistor circuits Grant 5,545,577 - Tada August 13, 1	1996-08-13
CMOS structure with varying gate oxide thickness and with both different and like conductivity-type gate electrodes Grant 5,497,021 - Tada March 5, 1	1996-03-05
Insulated-gate semiconductor field effect transistor which operates with a low gate voltage and high drain and source voltages Grant 5,495,122 - Tada February 27, 1	1996-02-27
High voltage MIS transistor and semiconductor device Grant 5,436,486 - Fujishima , et al. July 25, 1	1995-07-25
High withstand voltage M I S field effect transistor and semiconductor integrated circuit Grant 5,432,370 - Kitamura , et al. July 11, 1	1995-07-11

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